公开(公告)号：US4547621A

公开(公告)日：1985-10-15

申请号：US623860

申请日：1984-06-25

申请人： Michael Hack ,  Subhendu Guha

发明人： Michael Hack ,  Subhendu Guha

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/065 ,  H01L31/06

CPC分类号： H01L31/065 ,  H01L31/0547 ,  Y02E10/52

摘要： An improved photovoltaic device characterized by long term stability in its photoconversion ability. The device is adapted to absorb incident light throughout a substantial portion of the bulk of the photoactive region thereof in a substantially uniform manner. Said uniform absorption of light is provided by grading the band gap of at least a portion of the semiconductor material of the photoactive region thereof such that the graded portions most proximate the light incident surface of the photovoltaic device have a wider band gap than do those portions more distal from the light incident surface. The band gap gradation may be smooth or stepped, and may be accomplished by compositional variation of the semiconductor materials forming the photoactive region. A method for fabricating the stable photovoltaic device of the instant invention is also provided.

摘要翻译： 一种改进的光电器件，其特征在于其光转换能力的长期稳定性。 该装置适于以基本均匀的方式吸收入射光的大部分光活性区域的大部分。 通过对其光活性区域的半导体材料的至少一部分的带隙进行分级来提供光的均匀吸收，使得最靠近光伏器件的光入射表面的渐变部分具有比这些部分更宽的带隙 远离光入射面。 带隙层级可以是平滑的或阶梯状的，并且可以通过形成光活性区域的半导体材料的组成变化来实现。 还提供了用于制造本发明的稳定光伏器件的方法。

公开(公告)号：US20050166955A1

公开(公告)日：2005-08-04

申请号：US11006959

申请日：2004-12-08

申请人： Prem Nath ,  Subhendu Guha

发明人： Prem Nath ,  Subhendu Guha

IPC分类号： H01L25/00 ,  H01L31/042 ,  H01L31/048

CPC分类号： H02S40/34 ,  F24S25/10 ,  F24S25/33 ,  F24S2025/02 ,  H02S20/24 ,  Y02B10/12 ,  Y02E10/47

摘要： A support system for retaining a photovoltaic device on a generally planar surface, without any mechanical connection to the surface, includes a frame assembly which rests upon the surface and supports one or more photovoltaic devices in a spaced apart relationship with the surface. At least one ballast pan is attached to the frame assembly. The ballast pan is configured to retain a ballast material therein. The ballast pan may comprise a peripheral ballast pan which extends along the perimeter of the assembly or it may comprise an internal ballast pan which is disposed beneath the photovoltaic device. Also disclosed herein is a method for using the support system.

摘要翻译： 用于将光伏器件保持在大体上平坦的表面上而没有与表面的任何机械连接的支撑系统包括搁置在表面上的框架组件，并以与表面间隔开的关系支撑一个或多个光伏器件。 至少一个压载盘连接到框架组件。 压载盘被配置为在其中保持压载材料。 压载盘可以包括沿着组件的周边延伸的周边压载锅，或者其可以包括设置在光伏器件下方的内部压载盘。 本文还公开了使用支撑系统的方法。

公开(公告)号：US5334423A

公开(公告)日：1994-08-02

申请号：US10074

申请日：1993-01-28

申请人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

发明人： Subhendu Guha ,  Chi C. Yang ,  XiXiang Xu

IPC分类号： B05D5/12 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01J37/32357 ,  C23C16/511 ,  H01J37/32697

摘要： High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode.

摘要翻译： 高质量的半导体材料沉积在微波通电的辉光放电沉积工艺中，通过以足以在100％饱和模式下或接近100％饱和模式产生等离子体的功率水平通过微波能量激励处理气体并通过阻止沉积物质进入衬底而进行 以便将沉积速率降低到小于在100％饱和模式下操作的值。

公开(公告)号：US5296045A

公开(公告)日：1994-03-22

申请号：US941157

申请日：1992-09-04

申请人： Arindam Banerjee ,  Chi C. Yang ,  Subhendu Guha

发明人： Arindam Banerjee ,  Chi C. Yang ,  Subhendu Guha

IPC分类号： H01L31/0236 ,  H01L31/052 ,  H01L31/076 ,  H01L31/06 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/0236 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

摘要： A back reflector for a photovoltaic device includes an electrically conductive, textured layer and a reflective layer conformally disposed on the textured layer. The reflector may include a protective layer atop the reflective layer. The materials of the reflector are selected to be non-reactive under conditions encountered in the manufacture and use of the photovoltaic device.

摘要翻译： 用于光伏器件的后反射器包括导电的纹理层和保形地设置在纹理层上的反射层。 反射器可以包括在反射层顶上的保护层。 反射器的材料在光伏器件的制造和使用中遇到的条件下选择为不反应的。

公开(公告)号：US5180686A

公开(公告)日：1993-01-19

申请号：US770734

申请日：1991-10-01

申请人： Arindam Banerjee ,  Subhendu Guha

发明人： Arindam Banerjee ,  Subhendu Guha

IPC分类号： H01L31/052 ,  H01L31/076 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/056 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548 ,  Y10T156/1056 ,  Y10T156/1062 ,  Y10T156/1066

摘要： A method of depositing a layer of doped or undoped wide band gap oxide material by chemical spray pyrolysis, upon a continuously advancing, elongated web of substrate material in a continuous, roll-to-roll process.

摘要翻译： 一种通过化学喷雾热解沉积掺杂或未掺杂的宽带隙氧化物材料层的方法，该方法是以连续的卷对卷方法连续前进的细长的基材材料。

公开(公告)号：US4555586A

公开(公告)日：1985-11-26

申请号：US637984

申请日：1984-08-06

申请人： Subhendu Guha ,  William DenBoer

发明人： Subhendu Guha ,  William DenBoer

IPC分类号： H01L31/04 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/06

CPC分类号： H01L31/075 ,  H01L31/03767 ,  Y02E10/548 ,  Y10S136/29

摘要： A photoresponsive device characterized by the capability of having photoinduced defects annealed out of the photoactive region thereof in a low temperature process. Low temperature annealability is provided by including small amounts of dopant material in the photoactive region of the semiconductor material of the device. More particularly, the incorporation of small amounts of a p-dopant, such as boron, into the intrinsic region of a p-i-n photovoltaic device lowers the annealing temperature thereof. Such low temperature annealable photovoltaic devices may be incorporated into modules designed to operate at temperatures sufficient to remove said light induced defects, thereby providing a photovoltaic module exhibiting long term stability in its energy conversion efficiency.

摘要翻译： 一种光响应装置，其特征在于在低温过程中光诱导缺陷退火出其光活性区域的能力。 通过在器件的半导体材料的光活性区域中包含少量的掺杂剂材料来提供低温退火性。 更具体地，将少量的p掺杂剂（例如硼）结合到p-i-n光伏器件的本征区域中降低其退火温度。 这样的低温可退火光伏器件可以结合到被设计为在足以去除所述光诱导缺陷的温度下工作的模块中，从而提供在其能量转换效率方面具有长期稳定性的光伏模块。

公开(公告)号：US20100200411A1

公开(公告)日：2010-08-12

申请号：US12369022

申请日：2009-02-11

申请人： Shengzhong Liu ,  Chaolan Hu ,  Yanhua Zhou ,  Arindam Banerjee ,  Jeffrey Yang ,  Subhendu Guha

发明人： Shengzhong Liu ,  Chaolan Hu ,  Yanhua Zhou ,  Arindam Banerjee ,  Jeffrey Yang ,  Subhendu Guha

IPC分类号： C25D5/10

CPC分类号： C25D5/022 ,  C25D5/18 ,  C25D5/20 ,  C25D9/08 ,  C25D17/00

摘要： A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process.

摘要翻译： 在溶液沉积工艺中，将诸如透明导电氧化物材料的金属和氧材料电沉积到衬底上。 控制工艺参数以便导致适合用于高效光伏器件的后反射器结构的高质量材料层的沉积。沉积可以与操作以限制的掩模构件一起进行 金属和氧气材料沉积到衬底的特定部分。 在特定情况下，沉积可以以连续的卷对卷方式实施。 还公开了通过本方法制造的半导体器件和半导体器件的部件以及用于执行该过程的装置。

公开(公告)号：US20100117172A1

公开(公告)日：2010-05-13

申请号：US12267149

申请日：2008-11-07

申请人： Baojie Yan ,  Xixiang Xu ,  Guozhen Yue ,  Subhendu Guha ,  Chi Yang

发明人： Baojie Yan ,  Xixiang Xu ,  Guozhen Yue ,  Subhendu Guha ,  Chi Yang

IPC分类号： H01L33/00 ,  H01L21/36

CPC分类号： H01L21/0262 ,  C23C16/22 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32761 ,  H01J2237/2001 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595

摘要： A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material.

摘要翻译： 通过VHF通电等离子体沉积工艺制造薄膜，氢化硅基半导体合金材料，其中处理气体在等离子体中分解，以将薄膜材料沉积到基底上。 该过程在0.5-2.0托的范围内的工艺气体压力下进行，衬底温度不超过300℃，衬底 - 阴极间距在10-50毫米的范围内。 沉积速率至少为每秒5埃。 还公开了包括半导体材料的光伏器件。

公开(公告)号：US20090075483A1

公开(公告)日：2009-03-19

申请号：US11254838

申请日：2005-10-20

申请人： Subhendu Guha ,  Arindam Banerjee ,  Kevin Beernink ,  Todd Johnson ,  Ginger Pietka ,  Gregory DeMaggio ,  Shengzhong (Frank) Liu ,  Jeffrey Yang

发明人： Subhendu Guha ,  Arindam Banerjee ,  Kevin Beernink ,  Todd Johnson ,  Ginger Pietka ,  Gregory DeMaggio ,  Shengzhong (Frank) Liu ,  Jeffrey Yang

IPC分类号： H01L21/311 ,  H01L31/04

CPC分类号： H01L31/18 ,  H01L31/0392 ,  Y02E10/50

摘要： An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

摘要翻译： 诸如光电器件的超轻量半导体器件被制造在不可蚀刻的阻挡层上，其被设置在可蚀刻的衬底上。 该装置与合适的蚀刻剂接触足以消除基底厚度的至少一部分的时间。 阻挡层防止在蚀刻过程中损坏光伏材料。 通过该方法制造的光伏器件具有超过300w / kg的特定功率水平。

公开(公告)号：US20050164474A1

公开(公告)日：2005-07-28

申请号：US10765435

申请日：2004-01-27

申请人： Subhendu Guha ,  Chi Yang ,  Baojie Yan

发明人： Subhendu Guha ,  Chi Yang ,  Baojie Yan

IPC分类号： C23C16/24 ,  C23C16/455 ,  H01L21/205 ,  H01L31/18 ,  H01L31/20 ,  H01L21/20

CPC分类号： C23C16/45523 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1816 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02P70/521

摘要： A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

摘要翻译： 微晶半导体材料层的等离子体沉积的方法是通过对包含半导体材料的前体的工艺气体和具有电磁能量的稀释剂进行激励，从而产生等离子体来进行的。 等离子体将一层微晶半导体材料沉积到基底上。 处理气体中稀释剂的浓度随着沉积的微晶半导体材料层的厚度而变化。 还公开了该方法用于制备N-I-P型光伏器件的用途。