公开(公告)号：US20060216417A1

公开(公告)日：2006-09-28

申请号：US11373408

申请日：2006-03-09

申请人： Michael Todd ,  Keith Weeks ,  Paul Jacobson

发明人： Michael Todd ,  Keith Weeks ,  Paul Jacobson

IPC分类号： C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/45574 ,  C23C16/52

摘要： A substrate processing system has computer controlled injectors. The computer is configured to adjust a plurality of injectors, such as during deposition of a graded layer, between depositions of two different layers, or between deposition and chamber clean steps.

摘要翻译： 基板处理系统具有计算机控制的喷射器。 计算机被配置为调整多个喷射器，例如在沉积层析层期间，在两个不同层的沉积之间，或在沉积和室清洁步骤之间。

公开(公告)号：US20060234504A1

公开(公告)日：2006-10-19

申请号：US11343264

申请日：2006-01-30

申请人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Weeks

发明人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Weeks

IPC分类号： H01L21/44

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

摘要翻译： 化学气相沉积方法使用丙硅烷和含卤素蚀刻剂源（例如氯）在混合基底的选定区域上选择性沉积含Si膜。 掺杂源可以与丙硅烷和蚀刻剂源混合以选择性沉积掺杂的含Si薄膜。 选择性沉积方法可用于各种应用，例如半导体制造。

公开(公告)号：US20060211248A1

公开(公告)日：2006-09-21

申请号：US11362461

申请日：2006-02-24

申请人： Paul Brabant ,  Paul Jacobson ,  Keith Weeks

发明人： Paul Brabant ,  Paul Jacobson ,  Keith Weeks

IPC分类号： H01L21/306 ,  H01L21/302 ,  C23F1/00

CPC分类号： C23F1/12 ,  C23C16/4402 ,  C23C16/4405 ,  H01J37/3244 ,  H01L21/67115

摘要： A method for purifying a gas stream in a semiconductor process system comprises cooling impurities in the gas stream. The gas stream may comprise an HCl gas having a moisture content. The moisture contacts a cold element onto which the moisture can condense.

摘要翻译： 在半导体工艺系统中净化气流的方法包括冷却气流中的杂质。 气流可以包含具有水分含量的HCl气体。 湿气会接触冷水元素，水分可以凝结在其上。

公开(公告)号：US20080081112A1

公开(公告)日：2008-04-03

申请号：US11540197

申请日：2006-09-29

申请人： Paul Brabant ,  Paul Jacobson

发明人： Paul Brabant ,  Paul Jacobson

IPC分类号： C23C16/00 ,  B05D3/06

CPC分类号： C30B25/10 ,  C30B23/06 ,  C30B35/00 ,  H01L21/67103 ,  H01L21/67115

摘要： A reactor for processing a plurality of workpieces including a support for holding the plurality of workpieces, a first processing zone, one or more radiant heating elements adapted to heat a plurality of workpieces positioned in the first processing zone, a second processing zone, one or more resistive heating elements adapted to heat a plurality of workpieces positioned in the second processing zone, and an apparatus for moving the support between the first processing zone and the second processing zone.

摘要翻译： 一种用于处理多个工件的反应器，包括用于保持多个工件的支撑件，第一处理区域，适于加热位于第一处理区域中的多个工件的一个或多个辐射加热元件，第二处理区域，一个或 适于加热位于第二处理区域中的多个工件的更多的电阻加热元件，以及用于在第一处理区域和第二处理区域之间移动支撑件的装置。

公开(公告)号：US07863492B2

公开(公告)日：2011-01-04

申请号：US10549769

申请日：2004-03-10

申请人： Edward Ludovicus Koper ,  Ivan Greager ,  Jan Hendrik Scholtz ,  Johan Pieter de Wet ,  Mieke Ann Desmet ,  Wilhelmina Jansen ,  Paul Jacobson

发明人： Edward Ludovicus Koper ,  Ivan Greager ,  Jan Hendrik Scholtz ,  Johan Pieter de Wet ,  Mieke Ann Desmet ,  Wilhelmina Jansen ,  Paul Jacobson

IPC分类号： C07C2/68

CPC分类号： C07C2/66 ,  C07C15/02

摘要： This invention relates to a process for producing linear alkyl benzene and linear paraffins, the process including the steps of obtaining a hydrocarbon condensate containing olefins, paraffins and oxygenates from a low temperature Fischer-Tropsch reaction; a) fractionating a desired carbon number distribution from the hydrocarbon condensate to form a fractionated hydrocarbon condensate stream; b) extracting oxygenates from the fractionated hydrocarbon condensate stream from step a) to form a stream containing olefins and paraffins; c) alkylating the stream containing olefins and paraffins from step b) with benzene in the presence of a suitable alkylation catalyst; and d) recovering linear alkyl benzene and linear paraffin.

摘要翻译： 本发明涉及直链烷基苯和直链烷烃的制备方法，该方法包括以下步骤：从低温费 - 托反应获得含有烯烃，链烷烃和含氧化合物的烃缩合物; a）从烃缩合物中分馏所需的碳数分布以形成分馏的烃冷凝物流; b）从来自步骤a）的分馏的烃冷凝物流中提取含氧化合物以形成含有烯烃和链烷烃的物流; c）在合适的烷基化催化剂存在下，用苯将来自步骤b）的含有烯烃和链烷烃的物流烷基化; 和d）回收直链烷基苯和线型石蜡。

公开(公告)号：US07231141B2

公开(公告)日：2007-06-12

申请号：US10654068

申请日：2003-09-03

申请人： Paul Jacobson ,  Ivo Raaijmakers ,  Ravinder Aggarwal ,  Robert C. Haro

发明人： Paul Jacobson ,  Ivo Raaijmakers ,  Ravinder Aggarwal ,  Robert C. Haro

IPC分类号： A21B2/00 ,  C23C16/00

CPC分类号： A47C31/001 ,  B32B7/02 ,  D10B2331/021 ,  H01L21/28556

摘要： A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.

摘要翻译： 在高温处理室中待加工的基板被预热以避免当基板落在加热的基座上时与热冲击相关的问题。 通过将基板保持在保持在处理温度处于或接近加工温度的基座上直到基板的温度接近处理温度来实现预热。 因此，晶片翘曲和断裂大大降低，并且由于在将感受器维持在恒定温度而不降温和再加热时间的情况下节省时间，晶片产量得到改善。

公开(公告)号：US5787415A

公开(公告)日：1998-07-28

申请号：US739531

申请日：1996-10-30

申请人： Paul Jacobson ,  Michael Tefft

发明人： Paul Jacobson ,  Michael Tefft

IPC分类号： G06F17/30

CPC分类号： G06F17/30371 ,  Y10S707/99931 ,  Y10S707/99932

摘要： Processing overhead for maintenance of integrity of one or more de-normalized relational databases including an entity-attribute-relationship architecture during updates thereof in a decision support system is expedited by transfer and merger of data by use of standard utilities under control of control files corresponding to the database architecture. Complexity of maintenance of the database as the database architecture is changed is minimized by alteration of the control files but not the utilities or the complex protocols of previously known systems. By thus reducing processing overhead when updating and/or refreshing of the database(s) is to be done, data may be efficiently maintained with improved currency while enhancing availability of the system to the user. Efficiency of the decision support system is improved since de-normalization may be accommodated by the modification of control files which are preferably in the form of SQL statements and thus the database architecture can be readily optimized at will or adaptively for high search efficiency.

摘要翻译： 在决策支持系统更新期间维护一个或多个解除规范化的关系数据库的完整性的处理开销，包括实体 - 属性关系架构，在通过控制文件对应的控制下通过使用标准实用程序的传输和合并来加速数据的加速 到数据库架构。 通过更改控制文件而不是以前已知系统的实用程序或复杂协议，将数据库维护的复杂性作为数据库体系结构的改变最小化。 通过这样在数据库的更新和/或更新完成时减少处理开销，可以以改进的货币有效地保持数据，同时增强系统对用户的可用性。 决策支持系统的效率得到改善，因为可以通过修改控制文件来适应解除规范化，这些控制文件优选地是以SQL语句的形式，因此数据库架构可以容易地随意优化或适应于高搜索效率。

公开(公告)号：US08222305B2

公开(公告)日：2012-07-17

申请号：US12674929

申请日：2008-08-22

申请人： Paul Jacobson ,  Philip Alex Vogel

发明人： Paul Jacobson ,  Philip Alex Vogel

IPC分类号： C07C27/00 ,  B03B1/00

CPC分类号： C10G2/342 ,  C10G2300/1022 ,  C10G2300/44

摘要： A hydrocarbon synthesis process (10) includes feeding gaseous reactants (18) into a slurry bed (14), allowing the gaseous reactants (18) to react catalytically, thereby to form liquid and gaseous hydrocarbon products, and subjecting a product mixture comprising liquid product and catalyst particles in a filtration stage to filtration, by passing the liquid product through a filtering medium (30) to separate catalyst particles from the liquid product. The gaseous products are withdrawn (23) and cooled to form a multi-phase product which is separated to produce at least a hydrocarbon condensate stream (88) and a tail-gas stream (84). At least a portion of the hydrocarbon condensate stream (88) is treated (96) to remove oxygenated components therefrom, producing a backflush condensate. From time to time, the filtering medium (30) of the filtration stage is backflushed by passing the backflush condensate through the filtering medium (30).

摘要翻译： 烃合成方法（10）包括将气态反应物（18）进料到浆料床（14）中，使气态反应物（18）催化反应，从而形成液态和气态烃产物，并对含有液体产物 和过滤阶段的催化剂颗粒进行过滤，通过使液体产物通过过滤介质（30）以从催化剂颗粒与液体产物分离。 取出气体产物（23）并冷却以形成多相产物，其被分离以产生至少一个烃冷凝物流（88）和尾气流（84）。 至少部分烃冷凝物流（88）被处理（96）以从其中除去氧化的组分，产生反冲冷凝物。 有时，通过使反冲冷凝物通过过滤介质（30）将过滤级的过滤介质（30）反冲洗。

公开(公告)号：US07816236B2

公开(公告)日：2010-10-19

申请号：US11343264

申请日：2006-01-30

申请人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Doran Weeks

发明人： Matthias Bauer ,  Chantal Arena ,  Ronald Bertram ,  Pierre Tomasini ,  Nyles Cody ,  Paul Brabant ,  Joseph Italiano ,  Paul Jacobson ,  Keith Doran Weeks

IPC分类号： H01L21/20

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

摘要翻译： 化学气相沉积方法使用丙硅烷和含卤素蚀刻剂源（例如氯）在混合基底的选定区域上选择性沉积含Si膜。 掺杂源可以与丙硅烷和蚀刻剂源混合以选择性沉积掺杂的含Si薄膜。 选择性沉积方法可用于各种应用，例如半导体制造。

公开(公告)号：US20090101633A1

公开(公告)日：2009-04-23

申请号：US11875259

申请日：2007-10-19

申请人： Ravinder Aggarwal ,  Jeroen Stoutjesdijk ,  Paul Jacobson

发明人： Ravinder Aggarwal ,  Jeroen Stoutjesdijk ,  Paul Jacobson

IPC分类号： F27D11/00

CPC分类号： F27B17/0025 ,  H01L21/67115

摘要： An arrangement of short linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top bank and a bottom bank of linear heat lamps. Alternatively, only one such bank may be provided. At least one of the banks includes lamps of a plurality of different lengths, at least some of the lengths being shorter than a diameter of the substrate holder. In some configurations, the lamps in a bank are disposed substantially parallel to each other in a repeating pattern. In some other configurations, the lamps in a bank are disposed in a radial direction with respect to a vertical axis of the substrate holder. Power output of the short lamps can be adjusted individually or in groups to provide localized control of temperature of the substrate.

摘要翻译： 提供了短线性热灯的布置，其允许在半导体处理期间对衬底中的温度不均匀性进行局部控制。 反应器包括位于顶部组和底部的线状加热灯之间的衬底保持器。 或者，可以仅提供一个这样的银行。 至少一个组包括多个不同长度的灯，至少一些长度短于衬底保持器的直径。 在一些配置中，组中的灯基本上以重复图案彼此平行地设置。 在一些其它配置中，组中的灯相对于衬底保持器的垂直轴线沿径向方向设置。 短灯的功率输出可以单独或分组调整，以提供基板温度的局部控制。