公开(公告)号：US20140057395A1

公开(公告)日：2014-02-27

申请号：US14069920

申请日：2013-11-01

申请人： Micronas GmbH

发明人： Tobias KOLLETH ,  Pascal STUMPF ,  Christian JOOS

IPC分类号： H01L21/56

CPC分类号： H01L21/563 ,  H01L23/16 ,  H01L23/3107 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

摘要翻译： 提供一种半导体外壳，其包括金属支撑件和半导体本体，其底侧连接到金属支撑件。 半导体本体具有通过接合线和塑料化合物连接到引脚的金属表面，其完全包围接合线并部分地包围半导体本体。 塑料化合物在半导体本体的顶侧具有开口，并且在半导体本体的顶侧上形成有阻挡层。 屏障具有与半导体主体的边缘间隔开的顶部区域和基部区域，并且屏障的内部间隙决定了开口的尺寸。 由此，塑料化合物的一部分具有比屏障高的高度，并且在屏障的基底区域和半导体本体的顶侧之间形成固定层。

公开(公告)号：US20130140702A1

公开(公告)日：2013-06-06

申请号：US13691827

申请日：2012-12-02

申请人： Micronas GmbH

发明人： Christoph WILBERTZ ,  Heinz-Peter FRERICHS ,  Tobias KOLLETH

IPC分类号： H01L23/00

CPC分类号： H01L24/01 ,  G01N27/4148 ,  H01L21/563 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/4828 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05638 ,  H01L2224/05684 ,  H01L2224/2929 ,  H01L2224/83139 ,  H01L2224/83365 ,  H01L2924/07811 ,  H01L2924/14 ,  H05K3/4007 ,  H05K2201/0373 ,  H01L2924/00014 ,  H01L2924/01014

摘要： A fastening device is provided that includes a semiconductor body with an integrated circuit, and a dielectric passivation layer formed on the surface of the semiconductor body, and a trace formed underneath the passivation layer, and an oxide layer formed beneath the trace, and a connecting component that forms a frictional connection between a component formed above the passivation layer and the semiconductor body, wherein a formation passing through the passivation layer and the oxide layer and having a bottom surface is formed, and a conductive layer is formed on the bottom surface and the connecting component forms an electrical connection between the conductive layer and the component.

摘要翻译： 提供了一种紧固装置，其包括具有集成电路的半导体本体和形成在半导体主体的表面上的介电钝化层，以及形成在钝化层下面的迹线以及形成在迹线下方的氧化物层，以及连接 在钝化层上形成的部件和半导体本体之间形成摩擦连接的部件，其中形成穿过钝化层和氧化物层并具有底表面的形成在底表面上的导电层， 连接部件在导电层和部件之间形成电连接。

公开(公告)号：US20130126947A1

公开(公告)日：2013-05-23

申请号：US13683324

申请日：2012-11-21

申请人： Micronas GmbH

发明人： Christoph WILBERTZ ,  Heinz-Peter FRERICHS ,  Tobias KOLLETH

IPC分类号： H01L29/66

CPC分类号： H01L29/66 ,  G01N27/4143 ,  G01N27/4148 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05017 ,  H01L2224/05138 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05578 ,  H01L2224/05582 ,  H01L2224/05638 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/05687 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16058 ,  H01L2224/16112 ,  H01L2224/1613 ,  H01L2224/16145 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/26145 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32058 ,  H01L2224/32112 ,  H01L2224/3213 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/48247 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/8185 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/01014 ,  H01L2924/0476 ,  H01L2924/01074 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.

摘要翻译： 提供一种半导体气体传感器，其包括在其表面上形成有钝化层的半导体本体。 气体敏感控制电极通过间隙与沟道区域分离，或者控制电极被布置为具有间隙的电容器的第一板，并且电容器的第二板连接到作为 电容控制场效应晶体管。 控制电极连接到参考电压。 支撑区域设置有第一支撑结构和第二支撑结构。 在半导体本体的表面上设置接触区域。 第一接触区域具有摩擦连接并且与控制电极的电连接和第二接触区域至少与控制电极的摩擦连接。