专利检索 cpc:"H01L2924/0476" 第 1 页

1.

发明申请
ELECTRONIC DEVICES UTILIZING CONTACT PADS WITH PROTRUSIONS AND METHODS FOR FABRICATION 有权
标题翻译：电子设备利用接触垫与制造方法和制造方法

公开(公告)号：US20150235898A1

公开(公告)日：2015-08-20

申请号：US14426302

申请日：2013-09-04

申请人： Research Triangle Institute

发明人： Erik Vick , Garry Brian Cunningham , Dorota Temple

IPC分类号： H01L21/768 , H01L23/00 , H01L23/48

CPC分类号： H01L21/76898 , H01L23/481 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/94 , H01L25/0657 , H01L2224/0311 , H01L2224/0345 , H01L2224/03462 , H01L2224/036 , H01L2224/039 , H01L2224/0401 , H01L2224/05025 , H01L2224/05096 , H01L2224/05555 , H01L2224/05557 , H01L2224/05569 , H01L2224/0557 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05676 , H01L2224/05684 , H01L2224/05687 , H01L2224/06181 , H01L2224/13025 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/12042 , H01L2924/1461 , H01L2924/00014 , H01L2924/0476 , H01L2924/01074 , H01L2924/04941 , H01L2224/0239 , H01L2924/01029 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01079 , H01L2924/01047 , H01L2924/01044 , H01L2224/03 , H01L2924/00

摘要： An electronic device includes a substrate including a front side, a back side, a thickness between the front side and back side, one or more front-side vias extending from the front side into a part of the thickness, and an interconnect via extending from the back side toward the front side; a contact pad on the front side and including one or more protrusions extending through corresponding front-side vias and into the interconnect via; and an interconnect extending through the interconnect via and into contact with the protrusion(s).

摘要翻译： 一种电子设备包括：基板，包括正面，背面，前侧和后侧之间的厚度，从前侧延伸到厚度的一部分的一个或多个正面通孔;以及互连件，背面朝前方; 接触垫，其包括一个或多个延伸穿过相应的前侧通孔并进入所述互连通孔中的突起; 以及通过互连件延伸并与突起接触的互连。

2.

发明申请
VERTICALLY INTEGRATED WAFERS WITH THERMAL DISSIPATION 有权
标题翻译：垂直整体式散热器

公开(公告)号：US20160035702A1

公开(公告)日：2016-02-04

申请号：US14445991

申请日：2014-07-29

申请人： Empire Technology Development LLC

发明人： Zhijiong Luo

IPC分类号： H01L25/065 , H01L21/68 , H01L25/00 , H01L23/528 , H01L23/532 , H01J37/32 , H01L23/00 , H01L21/02 , H01L21/285 , H01L21/306 , H01L21/3065 , H01L21/67 , H01L23/373

CPC分类号： H01L25/0657 , H01L21/187 , H01L21/28518 , H01L21/28568 , H01L21/30604 , H01L21/3065 , H01L21/76889 , H01L21/8221 , H01L23/34 , H01L23/36 , H01L23/53214 , H01L23/53228 , H01L23/53257 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/83 , H01L25/50 , H01L2021/60007 , H01L2021/60097 , H01L2224/04026 , H01L2224/05568 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/0568 , H01L2224/05681 , H01L2224/05684 , H01L2224/2745 , H01L2224/27452 , H01L2224/27614 , H01L2224/27848 , H01L2224/29006 , H01L2224/291 , H01L2224/29124 , H01L2224/29138 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/2918 , H01L2224/29181 , H01L2224/29184 , H01L2224/32014 , H01L2224/32057 , H01L2224/32113 , H01L2224/32145 , H01L2224/32147 , H01L2224/325 , H01L2224/32503 , H01L2224/7525 , H01L2224/80896 , H01L2224/80948 , H01L2224/83048 , H01L2224/838 , H01L2224/83895 , H01L2224/83896 , H01L2224/83931 , H01L2224/83948 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/0474 , H01L2924/0475 , H01L2924/0476 , H01L2924/048 , H01L2924/0481 , H01L2924/0483 , H01L2924/2064 , H01L2924/20641 , H01L2224/056 , H01L2924/047 , H01L2924/00012

摘要： Technologies are generally described related to three-dimensional integration of integrated circuits (ICs) with spacing for heat dissipation. According to some examples, a self-aligned silicide may be formed in a temporary silicon layer and removed subsequent to bonding of the wafers to achieve improved contact between the combined ICs and enhanced heat dissipation through added spacing between the ICs.

摘要翻译： 通常将技术描述为具有用于散热间隔的集成电路（IC）的三维集成。根据一些示例，自对准硅化物可以形成在临时硅层中，并且在晶片的结合之后被去除，以通过在IC之间增加的间隔来实现组合IC之间的改善的接触和增强的散热。

3.

发明申请
Method for Preparing an Intergrated Circuits Device Having a Reinforcement Structure 审中-公开
标题翻译：用于制备具有加强结构的集成电路装置的方法

公开(公告)号：US20080132053A1

公开(公告)日：2008-06-05

申请号：US11566166

申请日：2006-12-01

申请人： Hsiao Che Wu , Yu Min Tsai , Wen Li Tsai

发明人： Hsiao Che Wu , Yu Min Tsai , Wen Li Tsai

IPC分类号： H01L21/44

CPC分类号： H01L24/11 , H01L21/561 , H01L23/3128 , H01L23/522 , H01L24/13 , H01L2224/05001 , H01L2224/05008 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/0517 , H01L2224/05176 , H01L2224/05178 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05548 , H01L2224/05569 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/05676 , H01L2224/05678 , H01L2224/05681 , H01L2224/05684 , H01L2224/05686 , H01L2224/13099 , H01L2224/16 , H01L2924/0001 , H01L2924/01005 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01044 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/14 , H01L2924/0476 , H01L2924/0479 , H01L2924/0475 , H01L2924/0474 , H01L2924/0483 , H01L2924/0496 , H01L2924/01014 , H01L2924/013 , H01L2924/00014 , H01L2924/048

摘要： An integrated circuit device comprises a substrate, a stack structure including circuit structure having conductive lines positioned on the substrate, a reinforcement structure including at least one supporting member positioned on the substrate and a roof covering the circuit structure and the supporting member and at least one bonding pad positioned on the roof and electrically connected to the conductive lines. A method for preparing an integrated circuit device comprises forming a stack structure including circuit structure having conductive lines on a substrate, forming a reinforcement structure including at least one supporting member on the substrate and a roof covering the supporting member and the circuit structure and forming at least one bonding pad on the roof and electrically connecting to the conductive lines.

摘要翻译： 集成电路装置包括基板，包括具有位于基板上的导线的电路结构的堆叠结构，包括位于基板上的至少一个支撑构件和覆盖电路结构和支撑构件的顶板的加强结构以及至少一个接合垫定位在屋顶上并电连接到导电线。一种集成电路器件的制造方法，其特征在于，在基板上形成具有导线的电路结构的堆叠结构，形成包括所述基板上的至少一个支撑部件的加强结构以及覆盖所述支撑部件和所述电路结构的屋顶，至少一个焊盘在屋顶上并且电连接到导电线。

4.

发明申请
VERTICALLY INTEGRATED WAFERS WITH THERMAL DISSIPATION 有权
标题翻译：垂直整体式散热器

公开(公告)号：US20170040295A1

公开(公告)日：2017-02-09

申请号：US15299483

申请日：2016-10-21

申请人： Empire Technology Development LLC

发明人： Zhijiong Luo

IPC分类号： H01L25/065 , H01L23/00 , H01L25/00

CPC分类号： H01L25/0657 , H01L21/187 , H01L21/28518 , H01L21/28568 , H01L21/30604 , H01L21/3065 , H01L21/76889 , H01L21/8221 , H01L23/34 , H01L23/36 , H01L23/53214 , H01L23/53228 , H01L23/53257 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/83 , H01L25/50 , H01L2021/60007 , H01L2021/60097 , H01L2224/04026 , H01L2224/05568 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/0568 , H01L2224/05681 , H01L2224/05684 , H01L2224/2745 , H01L2224/27452 , H01L2224/27614 , H01L2224/27848 , H01L2224/29006 , H01L2224/291 , H01L2224/29124 , H01L2224/29138 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/2918 , H01L2224/29181 , H01L2224/29184 , H01L2224/32014 , H01L2224/32057 , H01L2224/32113 , H01L2224/32145 , H01L2224/32147 , H01L2224/325 , H01L2224/32503 , H01L2224/7525 , H01L2224/80896 , H01L2224/80948 , H01L2224/83048 , H01L2224/838 , H01L2224/83895 , H01L2224/83896 , H01L2224/83931 , H01L2224/83948 , H01L2225/06524 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01073 , H01L2924/01074 , H01L2924/0474 , H01L2924/0475 , H01L2924/0476 , H01L2924/048 , H01L2924/0481 , H01L2924/0483 , H01L2924/2064 , H01L2924/20641 , H01L2224/056 , H01L2924/047 , H01L2924/00012

摘要： Technologies are generally described related to three-dimensional integration of integrated circuits (ICs) with spacing for heat dissipation. According to some examples, a self-aligned silicide may be formed in a temporary silicon layer and removed subsequent to bonding of the wafers to achieve improved contact between the combined ICs and enhanced heat dissipation through added spacing between the ICs.

摘要翻译： 通常将技术描述为具有用于散热间隔的集成电路（IC）的三维集成。根据一些示例，自对准硅化物可以形成在临时硅层中，并且在晶片的结合之后被去除，以通过在IC之间增加的间隔来实现组合IC之间的改善的接触和增强的散热。

5.

发明授权
Electronic devices utilizing contact pads with protrusions and methods for fabrication 有权
标题翻译：使用具有突起的接触垫的电子装置和用于制造的方法

公开(公告)号：US09257335B2

公开(公告)日：2016-02-09

申请号：US14426302

申请日：2013-09-04

申请人： Research Triangle Institute

发明人： Erik Vick , Garry Brian Cunningham , Dorota Temple

IPC分类号： H01L21/768 , H01L23/48 , H01L23/00

CPC分类号： H01L21/76898 , H01L23/481 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/94 , H01L25/0657 , H01L2224/0311 , H01L2224/0345 , H01L2224/03462 , H01L2224/036 , H01L2224/039 , H01L2224/0401 , H01L2224/05025 , H01L2224/05096 , H01L2224/05555 , H01L2224/05557 , H01L2224/05569 , H01L2224/0557 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05676 , H01L2224/05684 , H01L2224/05687 , H01L2224/06181 , H01L2224/13025 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/12042 , H01L2924/1461 , H01L2924/00014 , H01L2924/0476 , H01L2924/01074 , H01L2924/04941 , H01L2224/0239 , H01L2924/01029 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01079 , H01L2924/01047 , H01L2924/01044 , H01L2224/03 , H01L2924/00

摘要： An electronic device includes a substrate including a front side, a back side, a thickness between the front side and back side, one or more front-side vias extending from the front side into a part of the thickness, and an interconnect via extending from the back side toward the front side; a contact pad on the front side and including one or more protrusions extending through corresponding front-side vias and into the interconnect via; and an interconnect extending through the interconnect via and into contact with the protrusion(s).

摘要翻译： 一种电子设备包括：基板，包括正面，背面，前侧和后侧之间的厚度，从前侧延伸到厚度的一部分的一个或多个正面通孔;以及互连件，背面朝前方; 接触垫，其包括一个或多个延伸穿过相应的前侧通孔并进入所述互连通孔中的突起; 以及通过互连件延伸并与突起接触的互连。

6.

发明授权
Final passivation for wafer level warpage and ULK stress reduction 有权

公开(公告)号：US09754905B1

公开(公告)日：2017-09-05

申请号：US15292433

申请日：2016-10-13

申请人： International Business Machines Corporation

发明人： Ekta Misra , Krishna R. Tunga

IPC分类号： H01L23/00

CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/02126 , H01L2224/0215 , H01L2224/02166 , H01L2224/02185 , H01L2224/0219 , H01L2224/03013 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05191 , H01L2224/05611 , H01L2224/05616 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05657 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/05676 , H01L2224/05681 , H01L2224/05684 , H01L2224/05687 , H01L2224/05691 , H01L2224/05693 , H01L2224/131 , H01L2224/13111 , H01L2924/07025 , H01L2924/3511 , H01L2924/35121 , H01L2924/014 , H01L2924/01047 , H01L2924/00014 , H01L2924/04953 , H01L2924/04941 , H01L2924/0455 , H01L2924/01073 , H01L2924/04541 , H01L2924/0469 , H01L2924/0463 , H01L2924/01013 , H01L2924/0476 , H01L2924/01074 , H01L2924/0496 , H01L2924/0538 , H01L2924/01044 , H01L2924/0479 , H01L2924/01027 , H01L2924/048 , H01L2924/01028 , H01L2924/01006

摘要： Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.

7.

发明申请
SEMICONDUCTOR GAS SENSOR 有权
标题翻译：半导体气体传感器

公开(公告)号：US20130126947A1

公开(公告)日：2013-05-23

申请号：US13683324

申请日：2012-11-21

申请人： Micronas GmbH

发明人： Christoph WILBERTZ , Heinz-Peter FRERICHS , Tobias KOLLETH

IPC分类号： H01L29/66

CPC分类号： H01L29/66 , G01N27/4143 , G01N27/4148 , H01L23/3171 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L2224/0401 , H01L2224/04026 , H01L2224/05017 , H01L2224/05138 , H01L2224/05557 , H01L2224/05558 , H01L2224/05564 , H01L2224/05571 , H01L2224/05572 , H01L2224/05578 , H01L2224/05582 , H01L2224/05638 , H01L2224/05684 , H01L2224/05686 , H01L2224/05687 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/16058 , H01L2224/16112 , H01L2224/1613 , H01L2224/16145 , H01L2224/17505 , H01L2224/17517 , H01L2224/26145 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32058 , H01L2224/32112 , H01L2224/3213 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/33505 , H01L2224/33517 , H01L2224/48247 , H01L2224/73207 , H01L2224/73215 , H01L2224/73265 , H01L2224/8185 , H01L2224/8385 , H01L2224/83851 , H01L2924/00014 , H01L2924/10155 , H01L2924/01014 , H01L2924/0476 , H01L2924/01074 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.

摘要翻译： 提供一种半导体气体传感器，其包括在其表面上形成有钝化层的半导体本体。气体敏感控制电极通过间隙与沟道区域分离，或者控制电极被布置为具有间隙的电容器的第一板，并且电容器的第二板连接到作为电容控制场效应晶体管。控制电极连接到参考电压。支撑区域设置有第一支撑结构和第二支撑结构。在半导体本体的表面上设置接触区域。第一接触区域具有摩擦连接并且与控制电极的电连接和第二接触区域至少与控制电极的摩擦连接。