公开(公告)号：US20090284631A1

公开(公告)日：2009-11-19

申请号：US12511099

申请日：2009-07-29

申请人： Mie MATSUO ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

发明人： Mie MATSUO ,  Atsuko Kawasaki ,  Kenji Takahashi ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC分类号： H04N5/225 ,  H01L31/0232

CPC分类号： H04N5/2257 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/14625 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

摘要翻译： 半导体封装包括固态成像元件，电极焊盘，通孔电极和透光衬底。 固态成像元件形成在半导体衬底的第一主表面上。 电极焊盘形成在半导体衬底的第一主表面上。 通孔电极形成为在第一主表面和与形成在第一主表面上的电极焊盘相对的第二主表面之间延伸穿过半导体衬底。 将透光基板放置在图案化的粘合剂上以在固态成像元件上形成中空。 从透光性基板观察时，半导体衬底在中空部下方的厚度大于粘合剂下方的半导体衬底的厚度。

公开(公告)号：US20120014638A1

公开(公告)日：2012-01-19

申请号：US13176976

申请日：2011-07-06

申请人： Mika FUJII ,  Mie MATSUO ,  Tomohiro TAKASE

发明人： Mika FUJII ,  Mie MATSUO ,  Tomohiro TAKASE

IPC分类号： G02B6/00 ,  G02B6/34

CPC分类号： G01D5/342 ,  G01N21/552 ,  G02B2006/12104

摘要： According to one embodiment, an optical waveguide sensor chip includes an optical waveguide layer; a pair of optical elements disposed at both ends of the optical waveguide layer so that light enters the optical waveguide layer and the light exits from the optical waveguide layer; a functional film formed on a predetermined region of the optical waveguide layer; a covering layer formed in a planar region on the light entrance surface of the optical waveguide layer, in which at least the optical elements are disposed; a first through hole configured to allow the light entering the entrance-side optical element to pass therethrough; and a second through hole configured to allow the light exiting from the exit-side optical element to pass therethrough.

摘要翻译： 根据一个实施例，光波导传感器芯片包括光波导层; 一对光学元件，设置在光波导层的两端，使得光进入光波导层，光从光波导层出射; 形成在光波导层的预定区域上的功能膜; 覆盖层，形成在所述光波导层的光入射面的平面区域中，至少设置有所述光学元件; 第一通孔，被配置为允许进入入射侧光学元件的光通过; 以及第二通孔，其构造成允许从出射侧光学元件射出的光通过。

公开(公告)号：US20090295979A1

公开(公告)日：2009-12-03

申请号：US12404675

申请日：2009-03-16

申请人： Mie MATSUO ,  Sachiyo Ito

发明人： Mie MATSUO ,  Sachiyo Ito

IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L2924/0002 ,  H04N5/2257 ,  H04N5/374 ,  H01L2924/00

摘要： A solid-state image pickup apparatus includes an image pickup pixel unit in which a plurality of pixels each including a photoelectric conversion element and a field-effect transistor are arranged on a semiconductor substrate so that a light-receiving surface is disposed at a first surface side of the semiconductor substrate; a peripheral circuit unit provided at a periphery of the image pickup pixel unit of the semiconductor substrate; and a multilayered wiring layer in which a plurality of wiring layers for driving the field-effect transistor of the image pickup pixel unit are laminated at a second surface side of the semiconductor substrate, wherein a wiring in each of the wiring layers constituting the multilayered wiring layer is disposed so that a coverage of the wiring located at least in the image pickup pixel unit of the semiconductor substrate reaches 100%, viewed from the second surface side.

摘要翻译： 固态图像拾取装置包括：图像拾取像素单元，其中包括光电转换元件和场效应晶体管的多个像素布置在半导体衬底上，使得光接收表面设置在第一表面 侧; 设置在半导体衬底的摄像像素单元的周围的外围电路单元; 以及多层布线层，其中用于驱动图像拾取像素单元的场效应晶体管的多个布线层层叠在半导体基板的第二表面侧，其中构成多层布线的每个布线层中的布线 从第二表面侧观察，使至少位于半导体衬底的摄像像素单元中的配线的覆盖范围达到100％。

公开(公告)号：US20080081466A1

公开(公告)日：2008-04-03

申请号：US11861087

申请日：2007-09-25

申请人： Mie MATSUO ,  Hisashi KANEKO

发明人： Mie MATSUO ,  Hisashi KANEKO

IPC分类号： H01L21/44 ,  H01L21/311

CPC分类号： H01L21/76885 ,  G03F9/708 ,  G03F9/7084 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming an opening in a first film, embedding an alignment mark material for alignment with an upper layer in the opening, forming a second film on the first film in which the alignment mark material is embedded, irradiating the second film formed in a predetermined region including a position where the alignment mark material is embedded with a processing light, thereby to remove the second film to an extent that a portion of the second film remains in the predetermined region, and exposing the portion of the second film remaining in the predetermined region to an etching environment for etching the second film.

摘要翻译： 一种制造半导体器件的方法，包括在第一膜中形成开口，在开口中嵌入用于与上层对准的对准标记材料，在其中嵌入对准标记材料的第一膜上形成第二膜，照射 所述第二膜形成在包括所述对准标记材料被嵌入处理光的位置的预定区域中，从而将所述第二膜移除到所述第二膜的一部分保留在所述预定区域中的程度， 所述第二膜保留在所述预定区域中以蚀刻所述第二膜的蚀刻环境。

公开(公告)号：US20100321544A1

公开(公告)日：2010-12-23

申请号：US12797761

申请日：2010-06-10

申请人： Mie MATSUO ,  Kenichiro HAGIWARA ,  Akira KOMATSU

发明人： Mie MATSUO ,  Kenichiro HAGIWARA ,  Akira KOMATSU

IPC分类号： H04N5/335 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/83194 ,  H01L2224/9202 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device comprises a semiconductor substrate, a through contact and a metal film. The semiconductor substrate has a semiconductor element at a first face. The wiring pattern includes a grounding line and is located at a side of a second face opposite to the first face of the semiconductor substrate. The through contact penetrates the semiconductor substrate from the first face to the second face and electrically connects between the semiconductor element and the wiring pattern. The metal film is located between the second face of the semiconductor substrate and a face where the wiring pattern exists and electrically connected with the grounding line.

摘要翻译： 半导体器件包括半导体衬底，通孔和金属膜。 半导体衬底在第一面具有半导体元件。 布线图案包括接地线，并且位于与半导体基板的第一面相对的第二面的一侧。 通孔从第一面穿透半导体衬底到第二面，并且电连接在半导体元件和布线图案之间。 金属膜位于半导体基板的第二面和布线图案的表面之间并且与接地线电连接。

公开(公告)号：US20090014762A1

公开(公告)日：2009-01-15

申请号：US12166810

申请日：2008-07-02

申请人： Mie MATSUO ,  Yusuke Kohyama

发明人： Mie MATSUO ,  Yusuke Kohyama

IPC分类号： H01L31/00

CPC分类号： H01L27/14618 ,  H01L24/24 ,  H01L27/1464 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/12043 ,  H04N5/2257 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides a solid-state image pickup device including an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section. An interconnect layer driving the field-effect transistor in the image pickup pixel section is formed on a first surface side of the semiconductor substrate. A light receiving surface of the photoelectric conversion element is located on a second surface side of the semiconductor substrate. The solid-state image pickup device includes a first terminal exposed from the second surface side of the semiconductor substrate, and a second terminal electrically connected to the first terminal and connectable to an external device on the first surface side of the semiconductor substrate.

摘要翻译： 本发明提供了一种固态摄像装置，包括：设置在半导体衬底上的摄像像素部分，其中配置有多个具有光电转换元件和场效应晶体管的像素;以及外围电路 图像拾取像素部分。 驱动图像拾取像素部中的场效应晶体管的互连层形成在半导体衬底的第一表面侧上。 光电转换元件的光接收表面位于半导体衬底的第二表面侧。 固态摄像装置包括从半导体衬底的第二表面侧露出的第一端子和与第一端子电连接并可连接到半导体衬底的第一表面侧上的外部器件的第二端子。