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    Method of manufacturing semiconductor device, substrate processing method, computer-readable medium with program for executing a substrate processing method, and substrate processing apparatus
    2.
    发明授权
    Method of manufacturing semiconductor device, substrate processing method, computer-readable medium with program for executing a substrate processing method, and substrate processing apparatus 有权
    制造半导体器件的方法，衬底处理方法，具有用于执行衬底处理方法的程序的计算机可读介质和衬底处理设备

    公开(公告)号：US09136114B2

    公开(公告)日：2015-09-15

    申请号：US13883093

    申请日：2011-11-01

    申请人： Ryota Sasajima ,  Yoshinobu Nakamura ,  Yushin Takasawa ,  Yoshiro Hirose

    发明人： Ryota Sasajima ,  Yoshinobu Nakamura ,  Yushin Takasawa ,  Yoshiro Hirose

    IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455

    CPC分类号： H01L21/02565 ,  C23C16/308 ,  C23C16/45546 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of manufacturing a semiconductor device is provided, including: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas into the processing vessel; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the processing vessel, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the nitride layer to the oxynitride layer.

    摘要翻译： 提供了一种制造半导体器件的方法，包括：通过多次循环，在基片上形成具有特定膜厚度的氧氮化物膜，该循环是：在基片上形成特定的含有元素的层， 将特定元件装入容纳基板的处理容器中; 通过向所述处理容器供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过将该含氧气体和惰性气体供给到处理容器中，以该顺序为一个循环，将氮化物层变更为氧氮化物层，其中通过控制具有特定膜厚度的氮氧化物膜的组成比来控制 在将氮化物层改变为氮氧化物层时，处理容器中含氧气体的分压。

    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
    3.
    发明授权
    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
    半导体装置的制造方法，基板的处理方法及基板处理装置

    公开(公告)号：US08546272B2

    公开(公告)日：2013-10-01

    申请号：US13083022

    申请日：2011-04-08

    申请人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

    发明人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

    IPC分类号： H01L21/316

    CPC分类号： H01L21/67069 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02104 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0223 ,  H01L21/02247 ,  H01L21/0228 ,  H01L21/67011 ,  H01L21/67017

    摘要： An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle includes steps of: (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate; and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer, wherein the set of steps includes: (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate; (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon; and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer.

    摘要翻译： 形成具有低介电常数，低蚀刻速率和高绝缘性等特征的绝缘膜。 通过执行预定次数的循环，在处理容器中的基板上形成具有预定厚度的碳氮氧化物膜，其中该循环包括以下步骤：（a）执行预定次数的一组步骤以形成碳氮化物 在基板上具有预定厚度的层; 和（b）向处理容器供应含氧气体以氧化具有预定厚度的碳氮化物层，从而形成碳氮氧化物层，其中该步骤包括：（a-1）将含有元素的气体供应到 在使CVD反应形成含有该元素的层的状态下容纳基板的处理容器; （a-2）将含碳气体供给到处理容器中，在含有该元素的层上形成含碳层，从而形成包含该元素和碳的层; 和（a-3）将含氮气体供给到处理容器中以氮化包括元素和碳的层，从而形成碳氮化物层。

    PRESSURE SENSOR HAVING GOLD-SILICON EUTECTIC CRYSTAL LAYER INTERPOSED BETWEEN CONTACT LAYER AND SILICON SUBSTRATE
    7.
    发明申请
    PRESSURE SENSOR HAVING GOLD-SILICON EUTECTIC CRYSTAL LAYER INTERPOSED BETWEEN CONTACT LAYER AND SILICON SUBSTRATE 有权
    具有接触层和硅基板之间的金属硅层保护层的压力传感器

    公开(公告)号：US20070205474A1

    公开(公告)日：2007-09-06

    申请号：US11680970

    申请日：2007-03-01

    申请人： Tetsuya Fukuda ,  Katsuya Kikuiri ,  Yoshinobu Nakamura ,  Shigeaki Yamauchi

    发明人： Tetsuya Fukuda ,  Katsuya Kikuiri ,  Yoshinobu Nakamura ,  Shigeaki Yamauchi

    IPC分类号： H01L29/82

    CPC分类号： G01L9/0073 ,  G01L9/0075

    摘要： A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.

    摘要翻译： 压力传感器包括介于接触层和硅衬底之间的金 - 硅共晶晶体层。 由于接触层和硅衬底在接合硅衬底和玻璃衬底时通过使用金 - 硅共晶反应彼此电连接，所以可以使接触层和硅衬底之间的接触电阻稳定， 并且传感器的Q值可以稳定。 此外，由于接触层和硅衬底通过金 - 硅共晶反应彼此接合，所以接合强度是足够的。

    Label address translating device
    8.
    发明授权
    Label address translating device 失效
    标签地址转换设备

    公开(公告)号：US06954926B1

    公开(公告)日：2005-10-11

    申请号：US09502791

    申请日：2000-02-11

    申请人： Yoshinobu Nakamura

    发明人： Yoshinobu Nakamura

    IPC分类号： G06F9/45 ,  G06F9/48

    CPC分类号： G06F9/4812 ,  G06F2209/481

    摘要： A label address translating device includes a unit for processing a program and judging, when processing the program, whether or not an address is obtained from a label, and a label address translating unit for reading the address corresponding to the label from a label table in an exception handling, and writing the address to the program. The program, after being processed by the label address translating device, comes into a state where the label is rewritten into the address. The rewriting into the address is performed in the exception handling, and a time needed for processing (compiling) the program is reduced.

    摘要翻译： 标签地址转换装置包括用于处理程序的单元，在处理程序时判断是否从标签获得地址，以及标签地址转换单元，用于从标签表读取对应于标签的地址 异常处理，并将该地址写入程序。 该程序在由标签地址转换装置处理之后进入标签被重写到地址中的状态。 在异常处理中执行对地址的重写，并且减少了处理（编译）程序所需的时间。