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    White light emitting device
    2.
    发明申请
    White light emitting device 审中-公开
    白色发光装置

    公开(公告)号：US20070007541A1

    公开(公告)日：2007-01-11

    申请号：US11331751

    申请日：2006-01-13

    申请人： Min Kim ,  Kyeong Min ,  Masayoshi Koike

    发明人： Min Kim ,  Kyeong Min ,  Masayoshi Koike

    IPC分类号： H01L33/00

    CPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32

    摘要： The invention relates to a nitride light emitting device including first and second conductivity type nitride layers and a plurality of active regions emitting light of different wavelength. The active regions are sequentially formed between the first and the second conductivity type nitride layers. The active regions include at least one first active region having a plurality of first quantum barrier layers and quantum well layers, and a second active region emitting light of a wavelength larger than that of the first active region. The second active region has a plurality of second quantum barrier layers and at least one discontinuous quantum well structure formed between the plurality of second quantum barrier layers. The discontinuous quantum well structure comprises a plurality of quantum dots or crystallites.

    摘要翻译： 本发明涉及包括第一和第二导电型氮化物层和发射不同波长的光的多个有源区的氮化物发光器件。 有源区依次形成在第一和第二导电型氮化物层之间。 有源区包括具有多个第一量子势垒层和量子阱层的至少一个第一有源区和发射波长大于第一有源区的波长的光的第二有源区。 第二有源区具有多个第二量子势垒层和形成在多个第二量子势垒层之间的至少一个不连续量子阱结构。 不连续量子阱结构包括多个量子点或微晶。

    Nitride semiconductor light-emitting device and process for producing the same
    5.
    发明申请
    Nitride semiconductor light-emitting device and process for producing the same 失效
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20050218416A1

    公开(公告)日：2005-10-06

    申请号：US10898204

    申请日：2004-07-26

    申请人： Dong Cho ,  Masayoshi Koike ,  Yuji Imai ,  Min Kim ,  Bang Oh ,  Hun Hahm

    发明人： Dong Cho ,  Masayoshi Koike ,  Yuji Imai ,  Min Kim ,  Bang Oh ,  Hun Hahm

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00

    CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

    摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

    摘要翻译： 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

    Nitride semiconductor light emitting device
    6.
    发明申请
    Nitride semiconductor light emitting device 审中-公开
    氮化物半导体发光器件

    公开(公告)号：US20070114540A1

    公开(公告)日：2007-05-24

    申请号：US11600870

    申请日：2006-11-17

    申请人： Seong Lee ,  Kyeong Min ,  Soo Kim ,  Min Kim

    发明人： Seong Lee ,  Kyeong Min ,  Soo Kim ,  Min Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32

    摘要： Disclosed herein is a nitride semiconductor light emitting device, which comprises plural active layers emitting light of different wavelengths. The device comprises p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths. The active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light. Both the first and second active layers are composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and the first active layer is disposed closer to the p-type nitride layer than the second active layer. The number of quantum well layers of the first active layer is less than that of the second active layer.

    摘要翻译： 本文公开了一种氮化物半导体发光器件，其包括发射不同波长的光的多个有源层。 该器件包括p型和n型氮化物层，以及顺序堆叠在p型和n型氮化物层之间以发射具有不同波长的光的多个有源层。 有源层至少包括发射第一波长光的第一有源层和发射波长比第一波长光长的第二波长光的第二有源层。 第一和第二有源层都由交替布置的至少一个量子阱层和量子势垒层构成，并且第一有源层设置成比第二有源层更靠近p型氮化物层。 第一有源层的量子阱层的数量小于第二有源层的量子阱层的数量。