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    Method to solve particle performance of FSG layer by using UFU season film for FSG process
    2.
    发明授权
    Method to solve particle performance of FSG layer by using UFU season film for FSG process 有权
    通过使用UFU季膜对FSG过程解决FSG层的粒子性能的方法

    公开(公告)号：US06479098B1

    公开(公告)日：2002-11-12

    申请号：US09747135

    申请日：2000-12-26

    申请人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

    发明人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

    IPC分类号： C23C1640

    CPC分类号： H01J37/32477 ,  C23C16/4404 ,  Y10T428/2495 ,  Y10T428/265

    摘要： A method for reducing contaminants in a processing chamber 10 having chamber plasma processing region components comprising the following steps. The chamber plasma processing region components are cleaned. The chamber is then seasoned as follows. A first USG layer is formed over the chamber plasma processing region components. An FSG layer is formed over the first USG layer. A second USG layer is formed over the FSG layer. Wherein the USG, FSG, and second USG layers comprise a UFU season film. A UFU season film coating the chamber plasma processing region components of a processing chamber comprises: an inner USG layer over the chamber plasma processing region components; an FSG layer over the inner USG layer; and an outer USG layer over the FSG layer.

    摘要翻译： 一种用于减少具有室等离子体处理区域部件的处理室10中的污染物的方法，包括以下步骤。 腔室等离子体处理区域部件被清洁。 然后如下调节室。 在室等离子体处理区域部件上形成第一USG层。 在第一USG层上形成FSG层。 在FSG层上形成第二个USG层。 其中USG，FSG和第二USG层包括UFU季电影。 UFU季涂膜处理室的室等离子体处理区域部件包括：室上的内部USG层等离子体处理区域部件; 内部USG层上的FSG层; 以及FSG层上的外部USG层。

    Method to solve particle performance of FSG layer by using UFU season film for FSG process
    4.
    发明授权
    Method to solve particle performance of FSG layer by using UFU season film for FSG process 失效
    通过使用UFU季膜对FSG过程解决FSG层的粒子性能的方法

    公开(公告)号：US06815072B2

    公开(公告)日：2004-11-09

    申请号：US10256714

    申请日：2002-09-27

    申请人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

    发明人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

    IPC分类号： B05C1100

    CPC分类号： H01J37/32477 ,  C23C16/4404 ,  Y10T428/2495 ,  Y10T428/265

    摘要： A method for reducing contaminants in a processing chamber 10 having chamber plasma processing region components comprising the following steps. The chamber plasma processing region components are cleaned. The chamber is then seasoned as follows. A first USG layer is formed over the chamber plasma processing region components. An FSG layer is formed over the first USG layer. A second USG layer is formed over the FSG layer. Wherein the USG, FSG, and second USG layers comprise a UFU season film. A UFU season film coating the chamber plasma processing region components of a processing chamber comprises: an inner USG layer over the chamber plasma processing region components; an FSG layer over the inner USG layer; and an outer USG layer over the FSG layer.

    Method of forming in-situ SRO HDP-CVD barrier film
    6.
    发明授权
    Method of forming in-situ SRO HDP-CVD barrier film 失效
    形成原位SRO HDP-CVD阻挡膜的方法

    公开(公告)号：US06759347B1

    公开(公告)日：2004-07-06

    申请号：US10401715

    申请日：2003-03-27

    申请人： Yi-Lung Cheng ,  Ming-Hwa Yoo ,  Sze-An Wu ,  Ying Lung Wang

    发明人： Yi-Lung Cheng ,  Ming-Hwa Yoo ,  Sze-An Wu ,  Ying Lung Wang

    IPC分类号： H01L2131

    CPC分类号： C23C16/505 ,  C23C16/401 ,  H01L21/31629 ,  H01L21/76819 ,  H01L21/76829

    摘要： A method of reducing plasma induced damage in semiconductor devices and fluorine damage to a metal containing layer including providing a semiconductor wafer including semiconductor devices including a gate oxide and a process surface including metal lines; carrying out a first high density plasma chemical vapor deposition (HDP-CVD) process to controllably produce a silicon rich oxide (SRO) layer including a relatively increased thickness at a center portion of the process surface compared to a peripheral portion of the process surface; and, carrying out a second HDP-CVD process in-situ to deposit a fluorine doped silicon dioxide layer over the SRO layer to fill a space between the metal lines.

    摘要翻译： 一种降低半导体器件中的等离子体诱发损伤的方法和对含金属层的氟损伤的方法，包括提供包括包括栅极氧化物的半导体器件和包括金属线的工艺表面的半导体晶片的半导体晶片; 执行第一高密度等离子体化学气相沉积（HDP-CVD）工艺，以可控地产生富硅氧化物（SRO）层，其与过程表面的周边部分相比在工艺表面的中心部分包​​括相对增加的厚度; 并且原位进行第二HDP-CVD工艺以在SRO层上沉积氟掺杂的二氧化硅层以填充金属线之间的空间。

    Method to neutralize charge imbalance following a wafer cleaning process
    7.
    发明授权
    Method to neutralize charge imbalance following a wafer cleaning process 失效
    中和晶圆清洗过程后电荷不平衡的方法

    公开(公告)号：US06703317B1

    公开(公告)日：2004-03-09

    申请号：US10356248

    申请日：2003-01-30

    申请人： Yi-Lung Cheng ,  Ming-Hwa Yoo ,  Sze-An Wu ,  Ying-Lung Wang

    发明人： Yi-Lung Cheng ,  Ming-Hwa Yoo ,  Sze-An Wu ,  Ying-Lung Wang

    IPC分类号： H01L21302

    CPC分类号： H01L21/3105 ,  H01L21/02052 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/906

    摘要： A method of reducing an electrical charge imbalance on a wafer process surface including providing a semiconductor wafer having a process surface including an upper most first material layer; cleaning the process surface according to a wafer cleaning process including at least one of spraying and scrubbing to produce an electrical charge imbalance at the process surface; and, subjecting the process surface to a nitrogen containing plasma treatment to at least partially neutralize the electrical charge imbalance.

    摘要翻译： 一种减少晶片工艺表面上的电荷不平衡的方法，包括提供具有包括最上面的第一材料层的工艺表面的半导体晶片; 根据包括喷射和洗涤中的至少一种的晶片清洁过程清洁工艺表面以在工艺表面产生电荷不平衡; 并且使所述工艺表面进行含氮等离子体处理以至少部分地中和所述电荷不平衡。