公开(公告)号：US5976636A

公开(公告)日：1999-11-02

申请号：US45103

申请日：1998-03-19

申请人： Ming-Sheng Leu ,  Wei-Cheng Lih ,  Yuh-Wen Lee ,  Shau-Yi Chen ,  Wei-Jieh Chang ,  Shinn-Cherng Huang ,  Mau-Shen Liou

发明人： Ming-Sheng Leu ,  Wei-Cheng Lih ,  Yuh-Wen Lee ,  Shau-Yi Chen ,  Wei-Jieh Chang ,  Shinn-Cherng Huang ,  Mau-Shen Liou

IPC分类号： C23C14/32 ,  H05H1/50 ,  C23C14/14 ,  C23C14/00

CPC分类号： C23C14/325 ,  H05H1/50

摘要： An electric arc ion plating apparatus to coat a metal material on an object includes: (a) an vacuum chamber; (b) an electric arc bombardment chamber in the vacuum chamber, comprising an anode, a cathode target, and an arc triggering electrode to generate metal particles when a voltage is applied on the anode and the cathode, and on the arc triggering electrode; and (c) a magnetic coil having a longitudinal axis. The magnetic coil emanates from the electric arc bombardment chamber and encloses at least a part of the electric bombardment chamber. The magnetic coil contains a constant-diameter section enclosing and immediately emanating from the electric arc bombardment chamber to guide the metal particles away from the cathode and toward the object, and a varying-diameter section away from the electric arc bombardment chamber to provide optimum distribution of the metal particles before they reach the object surface. The varying-diameter section can be a diverging section for effectively coating relatively large objects, or a converging section for efficiently coating a relatively small object.

摘要翻译： 用于在物体上涂覆金属材料的电弧离子镀装置包括：（a）真空室; （b）真空室中的电弧轰击室，当在阳极和阴极上施加电压时，包括阳极，阴极靶和电弧触发电极以产生金属颗粒;以及电弧触发电极; 和（c）具有纵向轴线的电磁线圈。 电磁线圈从电弧轰击室发出并且包围电轰击室的至少一部分。 磁性线圈包含恒定直径部分，其包围并立即从电弧轰击室发出，以引导金属颗粒远离阴极并朝向物体，以及远离电弧轰击室的变化直径部分以提供最佳分布 的金属颗粒在它们到达物体表面之前。 变径部分可以是用于有效地涂覆较大物体的发散部分或用于有效地涂覆较小物体的会聚部分。

公开(公告)号：US20130334561A1

公开(公告)日：2013-12-19

申请号：US13527318

申请日：2012-06-19

申请人： Hsiu-Jen LIN ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Jen-Hui Tsai

发明人： Hsiu-Jen LIN ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Jen-Hui Tsai

IPC分类号： H01L33/48 ,  H01L33/62

CPC分类号： H01L33/0079 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L33/0095 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/29109 ,  H01L2224/29113 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83207 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/94 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/01083 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/27 ,  H01L2924/00

摘要： A method for bonding an LED wafer, a method for manufacturing an LED chip, and a bonding structure are provided. The method for bonding an LED wafer includes the following steps. A first metal film is formed on an LED wafer. A second metal film is formed on a substrate. A bonding material layer whose melting point is lower than or equal to about 110° C. is formed on the surface of the first metal film. The LED wafer is placed on the substrate. The bonding material layer is heated at a pre-solid reaction temperature for a pre-solid time to perform a pre-solid reaction. The bonding material layer is heated at a diffusion reaction temperature for a diffusing time to perform a diffusion reaction, wherein the melting points of the first and the second inter-metallic layers after diffusion reaction are higher than about 110° C.

摘要翻译： 提供一种用于结合LED晶片的方法，制造LED芯片的方法和接合结构。 用于结合LED晶片的方法包括以下步骤。 在LED晶片上形成第一金属膜。 在基板上形成第二金属膜。 在第一金属膜的表面上形成熔点低于或等于约110℃的接合材料层。 将LED晶片放置在基板上。 将接合材料层在预固体反应温度下加热预固化时间以进行预固体反应。 接合材料层在扩散反应温度下加热扩散时间以进行扩散反应，其中扩散反应后第一和第二金属间层的熔点高于约110℃。

公开(公告)号：US08236687B2

公开(公告)日：2012-08-07

申请号：US12854278

申请日：2010-08-11

申请人： Hsiu-Jen Lin ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Chieh-Lung Lai

发明人： Hsiu-Jen Lin ,  Jian-Shian Lin ,  Shau-Yi Chen ,  Chieh-Lung Lai

IPC分类号： H01L21/44

CPC分类号： H01L23/53247 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/30 ,  H01L33/40 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/83193 ,  H01L2224/83207 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15724 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/00014

摘要： A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin film layer on a surface of the substrate; forming a die-bonding material layer on the second metal thin film layer; placing the LED chip on the die-bonding material layer with the first metal thin film layer contacting the die-bonding material layer; heating the die-bonding material layer at a liquid -solid reaction temperature for a pre-curing time, so as to form a first intermetallic layer and a second intermetallic layer; and heating the die-bonding material layer at a solid-solid reaction temperature for a curing time for performing a solid-solid reaction. The liquid-solid reaction temperature and the solid-solid reaction temperature are both lower than 110° C., and a melting point of the first and second intermetallic layers after the solid-solid reaction is higher than 200° C.

摘要翻译： 芯片接合方法适合于将具有第一金属薄膜层的LED芯片芯片接合到基板上。 该方法包括在基板的表面上形成第二金属薄膜层; 在所述第二金属薄膜层上形成芯片接合材料层; 将第一金属薄膜层与芯片接合材料层接触，将LED芯片放置在芯片接合材料层上; 在液固固化反应温度下加热芯片接合材料层达预固化时间，以形成第一金属间层和第二金属间层; 并在固 - 固反应温度下加热芯片接合材料层进行固 - 固反应的固化时间。 液固反应温度和固 - 固反应温度均低于110℃，固 - 固反应后第一和第二金属间化合物的熔点高于200℃。

公开(公告)号：US20050220412A1

公开(公告)日：2005-10-06

申请号：US10901040

申请日：2004-07-29

申请人： Wen-Jiun Liu ,  Chien-Cheng Yang ,  Zhi-Cheng Hsiao ,  Shau-Yi Chen ,  Yun-Wen Lee

发明人： Wen-Jiun Liu ,  Chien-Cheng Yang ,  Zhi-Cheng Hsiao ,  Shau-Yi Chen ,  Yun-Wen Lee

IPC分类号： G02B6/12 ,  G02B6/125 ,  G02B6/26 ,  G02B6/42

CPC分类号： G02B6/125 ,  G02B2006/1215

摘要： An optical splitter with reflection suppression is disclosed. It includes an input waveguide and a plurality of receiving waveguides. The input waveguide has at least one output surface for transferring an incident light to the receiving surfaces of the receiving waveguides. Each of the output surfaces parallels the corresponding receiving surfaces, and an oblique angle is formed between the output surface and the progressing direction of the incident light.

摘要翻译： 公开了一种具有反射抑制的分光器。 它包括输入波导和多个接收波导。 输入波导具有用于将入射光传送到接收波导的接收表面的至少一个输出表面。 每个输出表面平行于相应的接收表面，并且在输出表面和入射光的前进方向之间形成倾斜角。

公开(公告)号：US20060110108A1

公开(公告)日：2006-05-25

申请号：US11227609

申请日：2005-09-16

申请人： Tsung-Fu Hsieh ,  Chien-Cheng Yang ,  Wen-Jiun Liu ,  Shau-Yi Chen ,  Jing-Yao Chang

发明人： Tsung-Fu Hsieh ,  Chien-Cheng Yang ,  Wen-Jiun Liu ,  Shau-Yi Chen ,  Jing-Yao Chang

IPC分类号： G02B6/36

CPC分类号： H02N1/008 ,  G02B6/422

摘要： A tunable light transceiver module for adjusting a photoelectric device is provided. The tunable structure includes a photoelectric device, a stage, and a set of two-dimensional actuators having a first direction actuator and a second direction actuator. The photoelectric device is installed on the stage. The first direction actuation device and the second direction actuation device are coupled to the stage for controlling the movement of the stage along the first direction and the second direction, which are parallel to the stage. The tunable module may comprise an additional vertical actuator for controlling the movement of the stage along the direction perpendicular to the stage, thus realizing the displacement adjustment in three dimensions.

摘要翻译： 提供了一种用于调节光电装置的可调光收发模块。 可调谐结构包括具有第一方向致动器和第二方向致动器的光电器件，载物台和一组二维致动器。 光电装置安装在舞台上。 第一方向致动装置和第二方向致动装置联接到载物台，用于控制载物台沿与平台平行的第一方向和第二方向的移动。 可调谐模块可以包括附加的垂直致动器，用于控制工作台沿垂直于工作台的方向的移动，从而实现三维位移调节。