Electronic/electric components used in clean room and substrate treatment apparatus
    1.
    发明授权
    Electronic/electric components used in clean room and substrate treatment apparatus 失效
    用于洁净室和基板处理设备的电子/电气部件

    公开(公告)号:US06337365B1

    公开(公告)日:2002-01-08

    申请号:US09381667

    申请日:1999-09-24

    IPC分类号: C08L9106

    CPC分类号: C08K5/0075

    摘要: An electronic/electric part used in a clean room in which the atmosphere is controlled to process a substrate in a semiconductor device industry, which contains a resin base material and additives added to the resin base material. The additives contain one or more materials selected from the group consisting of an anti-electrostatic agent made of a nonionic compound of a molecular weight of 350 or higher, an anti-oxidizing agent made of a phenolic compound of a molecular weight of 300 or higher, a lubricant, a plasticizer, a fire retardant, and a water repellent. The additives hardly releases gaseous organic substances from the resin base material under a condition where the part is used.

    摘要翻译: 一种电子/电气部件,其用于在半导体器件工业中控制气氛以处理衬底的洁净室中,该半导体器件工业包含树脂基材和添加到树脂基材中的添加剂。 添加剂含有一种或多种选自由分子量为350以上的非离子化合物制成的抗静电剂的组分,由分子量为300以上的酚类化合物制成的抗氧化剂 润滑剂,增塑剂,阻燃剂和防水剂。 在使用该部件的条件下,添加剂在树脂基材中几乎不释放气态有机物质。

    Method and device for treating substrate
    3.
    发明授权
    Method and device for treating substrate 失效
    底物处理方法及装置

    公开(公告)号:US06403498B1

    公开(公告)日:2002-06-11

    申请号:US09194539

    申请日:1998-11-30

    IPC分类号: H01L2131

    CPC分类号: H01L21/02043 H01L21/3121

    摘要: A substrate processing method of processing a surface of a substrate in manufacture of a semiconductor device, characterized by comprising a surface processing step for making a substance having an adsorption heat higher than that of an organic matter whose adsorption on the surface of the substrate, which has been cleaned, is undesirable, adsorbed on the surface of the substrate, and a film formation step for forming a thin film on the surface of the substrate which was processed in the above step.

    摘要翻译: 一种在制造半导体器件中处理衬底表面的衬底处理方法,其特征在于包括:表面处理步骤,用于使吸附热量高于在衬底表面吸附的有机物的吸附热量的物质, 已被清洗,不希望的,吸附在基材的表面上,以及在上述步骤中处理的基材表面上形成薄膜的成膜步骤。

    Air cleaning apparatus
    4.
    发明授权
    Air cleaning apparatus 失效
    空气净化装置

    公开(公告)号:US5514196A

    公开(公告)日:1996-05-07

    申请号:US226853

    申请日:1994-04-13

    IPC分类号: F24F3/16 B01D46/00

    摘要: An air cleaning apparatus includes an air passage chamber having a suction port, from which air is sucked, and a discharge port from which the air sucked from the suction port is discharged, an air blower, provided in the air passage chamber, for sucking the air from the suction port into the air passage chamber and discharging the sucked air from the discharge port, and a particle removing mechanism for removing particles contained in the air sucked from the suction port, the entire body of the particle removing mechanism being formed of a material which generates little impurity gas detrimental to processing in a processing space.

    摘要翻译: 一种空气净化装置,具有:具有吸入口的吸入口和从吸入口吸入的空气从其排出的排出口的空气通道室,设置在该通气室内的用于吸入 空气从吸入口进入空气通道室并从排出口排出吸入空气;以及颗粒去除机构,用于去除从吸入口吸入的空气中所含的颗粒,颗粒去除机构的整体由 产生对处理空间中的处理有害的少量杂质气体的材料。

    Processing apparatus using gas
    6.
    发明授权
    Processing apparatus using gas 失效
    使用气体的加工装置

    公开(公告)号:US5441076A

    公开(公告)日:1995-08-15

    申请号:US222589

    申请日:1994-04-04

    IPC分类号: G05D7/06

    摘要: A vertical heat treatment apparatus includes a heat treatment unit for performing a heat treatment process to a semiconductor wafer using a gas and a gas supply unit for supplying the gas to the heat treatment unit. The gas supply unit includes a plurality of gas controlling instruments having a plurality of gas flow control devices, a gas controlling instruments-storage vessel for storing the instruments, and a plurality of electrical parts arranged outside the storage vessel and belonging to the instruments, and an electrical parts-storage vessel for storing the electrical parts, and the plurality of gas flow control devices are integrated with each other by block-like joints.

    摘要翻译: 立式热处理装置包括:热处理单元,用于使用气体和用于将气体供给到热处理单元的气体供给单元对半导体晶片进行热处理处理。 气体供给单元包括具有多个气体流量控制装置的多个气体控制装置,用于存储仪器的气体控制装置 - 储存容器,以及设置在存储容器外部并属于仪器的多个电气部件,以及 用于存储电气部件的电气部件存储容器,并且多个气体流量控制装置通过块状接头彼此一体化。

    Processing apparatus and flow control arrangement therefor
    7.
    发明授权
    Processing apparatus and flow control arrangement therefor 失效
    处理装置及其流量控制装置

    公开(公告)号:US5439026A

    公开(公告)日:1995-08-08

    申请号:US164545

    申请日:1993-12-10

    IPC分类号: G05D7/06

    摘要: There is disclosed a flow control apparatus including a base body having a fluid inlet and a fluid outlet and a flow path for causing the inlet to communicate with the outlet, a flow adjustment means for adjusting a flow rate of the fluid in the flow path of said base body, a flow-rate detection means for detecting the flow rate of the fluid in the flow path, and a flow control means for outputting a flow-rate control signal to the flow adjustment means on the basis of a detection result of the flow-rate detection means to control the flow rate of the fluid to a predetermined value. At least one of the fluid inlet and the fluid outlet is positioned such that the flow direction of the fluid at a corresponding one of the fluid inlet and the fluid outlet is perpendicular to the flow path.

    摘要翻译: 公开了一种流量控制装置,其包括具有流体入口和流体出口的基体,以及用于使入口与出口连通的流路,流量调节装置,用于调节流体入口和流体出口的流动路径中的流体的流速 所述基体,用于检测流路中流体的流量的流量检测装置,以及流量控制装置,用于根据流量调节装置的检测结果向流量调节装置输出流量控制信号 流量检测装置,用于将流体的流量控制到预定值。 流体入口和流体出口中的至少一个被定位成使得流​​体入口和流体出口中的相应一个处的流体的流动方向垂直于流动路径。

    Flow control apparatus
    8.
    发明授权
    Flow control apparatus 失效
    流量控制装置

    公开(公告)号:US5421365A

    公开(公告)日:1995-06-06

    申请号:US53354

    申请日:1993-04-28

    摘要: A flow control apparatus comprises a base body, first and second gas passages provided in the base body for passing gas therethrough, gas flow adjusting mechanism, provided so as to connect the first and second gas passages to each other, for adjusting the flow of gas passing therethrough, and gas flow control unit for outputting a flow control signal to the gas flow adjusting mechanism so as to control the flow of gas passing through the first or second gas passage. In the base body, a bypass passage is formed in the base body for connecting the first and second gas passages to each other, and a valve mechanism is employed for opening and closing the bypass passage. When a trouble has occurred, the valve mechanism is opened, and a purging gas is supplied through the bypass passage to purge a flammable or noxious gas. Thereafter, the gas flow control apparatus is removed and repaired.

    摘要翻译: 一种流量控制装置,包括:基体,设置在基体中的用于使气体通过的第一和第二气体通道,设置成将第一和第二气体通路彼此连接的气体流量调节机构,用于调节气体流量 以及气体流量控制单元,用于向气体流量调节机构输出流量控制信号,以控制通过第一或第二气体通道的气体的流动。 在基体中,在基体中形成有用于将第一和第二气体通路彼此连接的旁通通道,并且采用阀机构来打开和关闭旁路通道。 当发生故障时,阀机构打开,并且通过旁路通道供应净化气体以吹扫易燃或有害气体。 此后,除去并修理气体流量控制装置。

    Gas supply system
    9.
    发明授权
    Gas supply system 失效
    供气系统

    公开(公告)号:US5307568A

    公开(公告)日:1994-05-03

    申请号:US942501

    申请日:1992-09-09

    摘要: A gas supply system includes a gas source containing a process gas to be supplied in a reduced-pressure container, a piping unit including a metallic pipe through which the process gas circulates and arranged between the gas supply source and the reduced-pressure container, and a duct formed of a metallic and/or nonmetallic pipe and arranged between the piping unit and the reduced-pressure container. At least part of the duct is formed of an austenitic stainless steel containing 6% or more of molybdenum by weight.

    摘要翻译: 气体供给系统包括:气体源,其包含供给到减压容器内的处理气体;管道单元,包括金属管,工业气体通过该金属管在气体供给源和减压容器之间循环配置;以及 由金属管和/或非金属管形成的管道,布置在管道单元和减压容器之间。 管道的至少一部分由含有6重量%以上的钼的奥氏体不锈钢形成。