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公开(公告)号：US11293396B2
公开(公告)日：2022-04-05
申请号：US17277964
申请日：2018-12-25
发明人： Koji Yamamoto
摘要： An ion current detection circuit is for detecting an ion current flowing through a spark plug for an internal combustion engine. A detection terminal is to be electrically connected to the spark plug. A reference potential is to be supplied to a reference terminal. At least one protection diode is provided between the detection terminal and the reference terminal. A current detection unit causes a detection current to flow between the detection terminal and the at least one protection diode. A current compensation unit causes a compensation current to flow between the detection terminal and the at least one protection diode.
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公开(公告)号：US10128735B2
公开(公告)日：2018-11-13
申请号：US15561077
申请日：2015-08-26
发明人： Koji Yamamoto , Atsunobu Kawamoto , Shinsuke Godo
摘要： A control circuit for a semiconductor switching element includes a control terminal, a main electrode terminal, and a current sensing terminal, and controls the semiconductor switching element including a diode connected to the main electrode terminal or the current sensing terminal. The control circuit includes an overheat detection circuit, a current detection circuit, and an interruption circuit. The overheat detection circuit outputs an overheat detection signal when a temperature detected based on an output of the diode is equal to or higher than a predetermined set temperature. The current detection circuit outputs a current detection signal when an output value of the current sensing terminal is equal to or greater than a predetermined set current value. The interruption circuit turns off the semiconductor switching element when both the overheat detection signal from the overheat detection circuit and the current detection signal from the current detection circuit are input.
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公开(公告)号：US09859238B2
公开(公告)日：2018-01-02
申请号：US15121499
申请日：2014-06-26
发明人： Shinsuke Godo , Atsunobu Kawamoto , Koji Yamamoto
IPC分类号： H01L29/15 , H01L23/00 , H01L29/739 , H01L29/78 , H01L27/04 , H01L29/06 , H01L29/12 , F02P3/055 , H01L27/06 , H01L29/16 , H01L23/482 , H01L29/40 , H01L29/08 , H01L29/10
CPC分类号： H01L24/05 , F02P3/0552 , F02P5/145 , H01L23/4824 , H01L24/45 , H01L24/48 , H01L24/85 , H01L27/04 , H01L27/0629 , H01L27/0664 , H01L29/06 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/08 , H01L29/10 , H01L29/1095 , H01L29/12 , H01L29/1608 , H01L29/40 , H01L29/402 , H01L29/417 , H01L29/739 , H01L29/7395 , H01L29/7397 , H01L29/78 , H01L2224/04042 , H01L2224/05013 , H01L2224/05015 , H01L2224/0502 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/0556 , H01L2224/45124 , H01L2224/4847 , H01L2224/85205 , H01L2924/10253 , H01L2924/10272 , H01L2924/13055 , H01L2924/13091 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： An object of the present invention is to provide a semiconductor device capable of eliminating unevenness of current distribution in a plane. A semiconductor device according to the present invention is a semiconductor device including a transistor cell region where a plurality of transistor cells is arranged on a semiconductor substrate, the semiconductor device including an electrode pad which is arranged avoiding the transistor cell region on the semiconductor substrate and is electrically connected to a one-side current electrode of each of the cells, in which the transistor cell region contains a plurality of regions each of which has a different current drive capability from each other depending on a distance from the electrode pad.
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公开(公告)号：US12009810B2
公开(公告)日：2024-06-11
申请号：US17780169
申请日：2020-02-04
发明人： Yukimasa Higashi , Koji Yamamoto
IPC分类号： H03K17/687 , H01T15/00 , H02H7/20
CPC分类号： H03K17/6872 , H01T15/00 , H02H7/20
摘要： The object of the present disclosure is to provide a power semiconductor device capable of miniaturization. According to the present disclosure power semiconductor device includes a semiconductor switching element configured to control a current flowing through a primary coil composing an ignition coil, and a control circuit configured to control drive of the semiconductor switching element, in which the control circuit includes a first constant current source, a first transistor with an output terminal thereof connected to a control terminal of the semiconductor switching element, a resistor with one end thereof connected to a control terminal of the first transistor and an other end thereof connected to the constant current source, a capacitor with one end thereof connected to the control terminal of the first transistor and an other end thereof grounded, and a second transistor with an input terminal thereof connected to the resistor and an output terminal grounded.
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公开(公告)号：US10651113B2
公开(公告)日：2020-05-12
申请号：US16082252
申请日：2016-05-31
IPC分类号： H01L23/495 , H01L23/48 , H01L23/62 , H01L23/00
摘要： An end of a high-voltage electrode (5) is connected to a high-voltage terminal of a semiconductor device (1). An end of a low-voltage electrode (6) is connected to a low-voltage terminal of the semiconductor device (1). A resin (15) seals the semiconductor device (1), the end of the high-voltage electrode (5), and the end of the low-voltage electrode (6). A first discharge electrode (16) is provided to a portion of the high-voltage electrode (5) not covered by the resin (15). A second discharge electrode (17) is provided to a portion of the low-voltage electrode (6) not covered by the resin (15). The first and second discharge electrodes (16,17) protrude to face each other.
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公开(公告)号：US11333123B2
公开(公告)日：2022-05-17
申请号：US16756110
申请日：2018-02-09
发明人： Makoto Ueno , Kazuhiro Nishimura , Koji Yamamoto
IPC分类号： F02P11/00 , H02H7/20 , H03K17/0812 , H02H1/00
摘要： A first clamp circuit (4) clamps a voltage between a gate and a first terminal of a switching device (Q1) to equal to or lower than a first clamp voltage. A control circuit (2) controls the switching device (Q1) and includes a driving unit (5) driving the switching device (Q1), an abnormality detecting unit (9) stopping the driving unit (5) upon detection of an abnormality in operation, and a second clamp circuit (10). The second clamp circuit (10) clamps the voltage between the gate and the first terminal to equal to or lower than a second clamp voltage which is lower than the first clamp voltage when the abnormality detecting unit (9) stops the driving unit (5).
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公开(公告)号：US09531377B2
公开(公告)日：2016-12-27
申请号：US14766966
申请日：2013-04-02
发明人： Koji Yamamoto , Shinsuke Godo
IPC分类号： H03K3/00 , H03K17/687 , F02P3/055 , F02P3/08 , F02P3/09 , H03K17/082 , H03K17/16
CPC分类号： H03K17/687 , F02P3/055 , F02P3/08 , F02P3/096 , H03K17/0828 , H03K17/168
摘要： The present invention has an object to provide a semiconductor device that has protective functions and is capable of achieving miniaturization and cost reduction. A semiconductor device according to the present invention includes a switching element, a drive circuit, and a control circuit. When a high-level drive control signal is output from the drive circuit, the control circuit stops driving of the switching element and charges an electric charge storing capacitor. When a low-level drive control signal is output from the drive circuit, the control circuit drives the switching element using electric charges stored in the electric charge storing capacitor.
摘要翻译： 本发明的目的是提供一种具有保护功能并且能够实现小型化和降低成本的半导体器件。 根据本发明的半导体器件包括开关元件，驱动电路和控制电路。 当从驱动电路输出高电平的驱动控制信号时，控制电路停止开关元件的驱动并对蓄电电容器进行充电。 当从驱动电路输出低电平驱动控制信号时，控制电路使用存储在电荷存储电容器中的电荷来驱动开关元件。
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