利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.014 秒)

    Plasma etching method with enhanced anisotropic property and apparatus thereof
    3.
    发明授权
    Plasma etching method with enhanced anisotropic property and apparatus thereof 失效
    具有增强的等离子体物质的等离子体蚀刻方法及其装置

    公开(公告)号：US5223085A

    公开(公告)日：1993-06-29

    申请号：US653634

    申请日：1991-02-12

    申请人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

    发明人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

    IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/3213

    CPC分类号： H01L21/32137 ,  C23F4/00 ,  H01L21/32136

    摘要： A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.

    摘要翻译： 公开了一种通过电子回旋共振产生的反应气体的等离子体各向异性蚀刻待处理的基板的方法。 待处理的基板位于处理容器中，并且将氯气和氯化氢气体引入处理容器中。 从引入处理容器的氯气和氯化氢气体的混合物中，通过电子回旋共振产生混合气体的等离子体。 根据这种方法，氯的等离子体的能量由H +的等离子体摄取，这导致氯的动能降低。 结果，氯的等离子体沿护套电场垂直地撞击待处理的基板。 因此，能够进行强烈的各向异性特性的蚀刻。

    Semiconductor wafer treating device utilizing ECR plasma
    6.
    发明授权
    Semiconductor wafer treating device utilizing ECR plasma 失效
    采用ECR等离子体的半导体晶片处理装置

    公开(公告)号：US4915979A

    公开(公告)日：1990-04-10

    申请号：US279016

    申请日：1988-12-02

    申请人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

    发明人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： H01J37/32357

    摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

    摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。 将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。 因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。 因此，提高了晶片上的处理的均匀性。

    Manufacturing method of a semiconductor device with a trench capacitor
    8.
    发明授权
    Manufacturing method of a semiconductor device with a trench capacitor 失效
    具有沟槽电容器的半导体器件的制造方法

    公开(公告)号：US5302541A

    公开(公告)日：1994-04-12

    申请号：US17904

    申请日：1993-02-16

    申请人： Moriaki Akazawa

    发明人： Moriaki Akazawa

    IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L21/70

    CPC分类号： H01L27/10864 ,  H01L27/10841

    摘要： A semiconductor device includes a second insulator layer (12) a first conductor layer (13) and a second insulator layer (14) stacked in this order on a semiconductor substrate (11), and a trench (15) formed to penetrate the stacked triple layer and extend into the semiconductor substrate. A capacitor is formed at a portion of the trench located in the semiconductor substrate. A transistor is formed directly on this capacitor. The capacitor has one electrode formed of the semiconductor substrate and the other electrode formed of a second conductor layer (18) formed in the trench to open a dielectric film (17). The transistor includes a gate electrode formed of the first conductor layer and source/drain regions (20, 21) of a second conductivity type distributed in the vicinity of the first and second insulator layers in an active layer (19) filling the trench. The drain and source regions of the transistor are formed by thermally diffusing impurities included in the first and second insulator layers into the active layer. Since a region to be added only for isolation is unnecessary in this semiconductor device and a manufacture method thereof, a memory cell area can be reduced, resulting in higher integration of the device.

    摘要翻译： 半导体器件包括在半导体衬底（11）上依次堆叠的第二绝缘体层（12），第一导体层（13）和第二绝缘体层（14），以及形成为穿透叠置的三层 并延伸到半导体衬底中。 在位于半导体衬底中的沟槽的一部分处形成电容器。 晶体管直接形成在该电容器上。 电容器具有由半导体衬底形成的一个电极，而另一个电极由形成在沟槽中的第二导体层（18）形成以打开电介质膜（17）。 晶体管包括由填充沟槽的有源层（19）中分散在第一和第二绝缘体层附近的第二导电类型的源极/漏极区（20,21）形成的栅电极和源/漏区（20,21）。 晶体管的漏极和源极区域通过将包括在第一和第二绝缘体层中的杂质热扩散到有源层中而形成。 由于在该半导体器件中不需要添加用于隔离的区域及其制造方法，因此可以减小存储单元面积，导致器件的集成化。

    Vacuum-treatment apparatus
    9.
    发明授权
    Vacuum-treatment apparatus 失效
    真空处理设备

    公开(公告)号：US5203981A

    公开(公告)日：1993-04-20

    申请号：US835331

    申请日：1992-02-14

    申请人： Moriaki Akazawa

    发明人： Moriaki Akazawa

    IPC分类号： C23C16/44 ,  C23C16/458 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

    CPC分类号： H01L21/68721 ,  H01J37/32082 ,  H01J2237/022

    摘要： A vacuum-treatment apparatus employs a magnetically driven clamp which uses repulsive and attractive forces between magnets. The clamp mechanism is simplified, maintenance of the apparatus can be easily performed, and the surfaces which mechanically contact one another are decreased as much as possible so that a vacuum-treatment apparatus which generates less dust is obtained.

    摘要翻译： 真空处理装置采用磁力驱动的夹具，其在磁体之间使用排斥力和吸引力。 夹紧机构简化，可以容易地进行设备的维护，并且尽可能地减少机械接触的表面，从而获得产生较少灰尘的真空处理设备。

    Semiconductor wafer treating device utilizing a plasma
    10.
    发明授权
    Semiconductor wafer treating device utilizing a plasma 失效
    利用等离子体的半导体晶片处理装置

    公开(公告)号：US4982138A

    公开(公告)日：1991-01-01

    申请号：US277640

    申请日：1988-11-29

    申请人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

    发明人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

    CPC分类号： H01J37/32678

    摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

    摘要翻译： 利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕 该等离子体产生室在其中产生最小的B场。 通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。 因此，提高等离子体发生室中的等离子体的密度和稳定性。 等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。 最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。