公开(公告)号：US4660110A

公开(公告)日：1987-04-21

申请号：US548515

申请日：1983-11-03

申请人： Muneo Iida ,  Jyosei Simizu ,  Masami Suzuki ,  Nobuyuki Okamoto ,  Toshinori Kazama ,  Masanobu Honda ,  Jiro Mochida ,  Seiji Tada ,  Masayuki Fujii

发明人： Muneo Iida ,  Jyosei Simizu ,  Masami Suzuki ,  Nobuyuki Okamoto ,  Toshinori Kazama ,  Masanobu Honda ,  Jiro Mochida ,  Seiji Tada ,  Masayuki Fujii

IPC分类号： G11B17/038 ,  G11B25/04 ,  G11B33/14 ,  G11B5/012

CPC分类号： G11B33/1446 ,  G11B17/038 ,  G11B25/043

摘要： A magnetic disk storage device capable of avoiding the occurrence of vibration of magnetic disks and off-track of magnetic heads with respect to the magnetic disks, including an inner shroud enclosing a disk assembly composed of a multiplicity of magnetic disks stacked in superposed relation with spacers being interposed therebetween and formed at its outer peripheral wall with first ports for inserting access arms therethrough and at its top above a spindle supporting the disk assembly with a second port, a cylindrical filter for removing dust from air flowing through the second port of the inner shroud into the interior thereof, and a dust cover enclosing the inner shroud, actuators and filter. The provision of the inner shroud is conductive to prevention of development of turbulent air flow in the vicinity of the magnetic disks. The inner shroud is further formed at its outer peripheral wall with a multiplicity of small apertures for releasing heat generated in the inner shroud to outside, to thereby avoid thermal off-track of the magnetic heads.

摘要翻译： 一种磁盘存储装置，其能够避免相对于磁盘发生磁盘的振动和磁头的偏离磁道，包括封闭由与多个间隔堆叠叠置的多个磁盘组成的磁盘组件的内罩 并且在其外周壁处形成有用于插入进入臂的第一端口，并且其顶部位于支撑具有第二端口的盘组件的主轴上;圆柱形过滤器，用于从流过内部的第二端口的空气中去除灰尘 护罩进入其内部，以及包围内护罩，致动器和过滤器的防尘盖。 内护罩的设置是导电的，以防止磁盘附近的湍流气流的发展。 内护罩在其外周壁处进一步形成有多个小孔，用于将内护罩中产生的热释放到外部，从而避免了磁头的热偏离。

公开(公告)号：US4879618A

公开(公告)日：1989-11-07

申请号：US248377

申请日：1988-09-23

申请人： Muneo Iida ,  Masanobu Honda ,  Katsumi Kawamura ,  Hiroshi Daito ,  Yoshihiko Miyake ,  Shouichi Setone ,  Hatsuo Takahashi ,  Michihiro Nakanishi

发明人： Muneo Iida ,  Masanobu Honda ,  Katsumi Kawamura ,  Hiroshi Daito ,  Yoshihiko Miyake ,  Shouichi Setone ,  Hatsuo Takahashi ,  Michihiro Nakanishi

IPC分类号： G11B21/21 ,  G11B5/48 ,  G11B5/54 ,  G11B5/60

CPC分类号： G11B5/6005 ,  G11B5/4813 ,  G11B5/54

摘要： An actuator for a magnetic disk device causes movement of a magnetic head in the radial direction of a rotating magnetic disk. Although this magnetic head is floated above the magnetic disk by a stream of air induced by the rotation of the magnetic disk at a high speed, an excessively high velocity of the air stream causes excessive vibrations of a soft gimbal resiliently supporting the magnetic head. In the actuator of the present invention, a head arm supporting the magnetic head through the gimbal is formed with a wind-breaking projection preventing direct impingement of the air stream against the gimbal and magnetic head, thereby minimizing vibrations of the gimbal and magnetic head.

摘要翻译： 用于磁盘装置的致动器引起磁头在旋转磁盘的径向上的移动。 虽然该磁头通过高速磁盘旋转引起的空气流浮在磁盘的上方，但气流的过高导致弹性地支撑磁头的软摇摆物的过度振动。 在本发明的致动器中，通过万向架支撑磁头的头臂形成有防风突起，防止空气流直接撞击万向节和磁头，从而最小化万向节和磁头的振动。

公开(公告)号：US09460893B2

公开(公告)日：2016-10-04

申请号：US13542818

申请日：2012-07-06

申请人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

发明人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

IPC分类号： C23C16/455 ,  H01J37/32

CPC分类号： H01J37/32091 ,  C23C16/4558 ,  H01J37/3244

摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.

摘要翻译： 基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。 作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204， 中心气 以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。 通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

公开(公告)号：US09349619B2

公开(公告)日：2016-05-24

申请号：US14238552

申请日：2012-08-28

申请人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

发明人： Masaya Kawamata ,  Masanobu Honda ,  Kazuhiro Kubota

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/683

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant.

摘要翻译： 等离子体蚀刻装置包括处理室; 保持单元，用于将基板保持在处理室内; 面对所述保持单元的电极板; 多个供给部件，其布置在相对于所述基板的不同径向位置处，用于将处理气体供应到所述保持单元和所述电极板之间的空间; 高频电源，其向所述保持单元和/或所述电极板提供高频电力，以将供应到所述空间的处理气体转换为等离子体; 调整单元，调整各供给部的供给条件; 以及控制单元，其控制所述调整单元改变处理气体的扩散对所述基板的活性种类浓度分布的影响为主的位置与所述处理气体的流动的影响为主的位置之间的供给条件 。

公开(公告)号：US08999068B2

公开(公告)日：2015-04-07

申请号：US12873458

申请日：2010-09-01

申请人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

发明人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

IPC分类号： C23C16/44 ,  H01J37/32

CPC分类号： C23C16/4405 ,  H01J37/32862

摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.

摘要翻译： 提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。 在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

公开(公告)号：US08524331B2

公开(公告)日：2013-09-03

申请号：US12943967

申请日：2010-11-11

申请人： Masanobu Honda

发明人： Masanobu Honda

IPC分类号： H05H1/24

CPC分类号： H01J37/32165 ,  C23C16/045 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/3266

摘要： A substrate processing method effectively suppresses non-uniformity in deposition degree on a surface of a substrate. The substrate processing method includes depositing a deposit on a sidewall of each opening of a resist pattern, which is formed on an antireflection film on an etching target film of the substrate and is provided with a plurality of openings, before etching the etching target film of the substrate. Plasma is generated in the depositing process by introducing a CHF-based gas into the processing chamber at a flow rate equal to or higher than about 1000 sccm while a pressure in the processing chamber is set to equal to or higher than about 100 mTorr.

摘要翻译： 基板处理方法有效地抑制基板表面的沉积程度的不均匀性。 基板处理方法包括在抗蚀剂图案的每个开口的侧壁上沉积沉积物，其形成在基板的蚀刻目标膜上的抗反射膜上，并且在蚀刻蚀刻目标膜之前设置有多个开口 底物。 在沉积过程中通过以等于或高于约1000sccm的流速将CHF基气体引入处理室而在处理室中的压力设定为等于或高于约100mTorr时，在沉积过程中产生等离子体。

公开(公告)号：US08404595B2

公开(公告)日：2013-03-26

申请号：US11860788

申请日：2007-09-25

申请人： Masanobu Honda ,  Manabu Sato ,  Yoshiki Igarashi

发明人： Masanobu Honda ,  Manabu Sato ,  Yoshiki Igarashi

IPC分类号： H01L23/302 ,  H01L21/461 ,  B23P15/00 ,  C03C25/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  B44C1/22

CPC分类号： H01L21/467 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/31116

摘要： A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.

摘要翻译： 用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源， 设置成面对第一电极的电极。 该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二 电极。 通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。

公开(公告)号：US20110114113A1

公开(公告)日：2011-05-19

申请号：US12948307

申请日：2010-11-17

申请人： Masanobu Honda ,  Takahiro Murakami ,  Takanori Mimura ,  Hidetoshi Hanaoka

发明人： Masanobu Honda ,  Takahiro Murakami ,  Takanori Mimura ,  Hidetoshi Hanaoka

IPC分类号： B08B7/00 ,  H01L21/3065

CPC分类号： B08B7/0035 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/32862

摘要： There is provided a cleaning method for a substrate processing apparatus capable of improving a removing rate of a deposit without increasing a self-bias voltage. The cleaning method includes supplying, to clean the inside of a processing chamber 102 under preset processing conditions, a processing gas including an O2 gas and an inert gas into the processing chamber at a preset flow rate ratio of the processing gas; and generating plasma of the processing gas by applying a high frequency power between a lower electrode 111 and a upper electrode 120. Here, the preset flow rate ratio of the processing gas is set depending on a self-bias voltage of the lower electrode 111 such that a flow rate ratio of the O2 gas is reduced while a flow rate ratio of the Ar gas is increased as an absolute value of the self-bias voltage decreases.

摘要翻译： 提供了一种能够提高沉积物去除速率而不增加自偏压的基板处理装置的清洗方法。 该清洗方法包括：以预定的处理条件，以预定的处理气体的流量比将供给包含O 2气体和惰性气体的处理气体供给到处理室102的内部， 并且通过在下电极111和上电极120之间施加高频电力来产生处理气体的等离子体。这里，处理气体的预设流量比根据下电极111的自偏压设定， 随着自偏压的绝对值的降低，Ar气体的流量比增加，O 2气体的流量比降低。

公开(公告)号：US20090242516A1

公开(公告)日：2009-10-01

申请号：US12413999

申请日：2009-03-30

申请人： Masanobu Honda ,  Hiroyuki Nakayama ,  Manabu Sato

发明人： Masanobu Honda ,  Hiroyuki Nakayama ,  Manabu Sato

IPC分类号： C23F1/02 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32027 ,  H01J37/32091 ,  H01L21/67069

摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.

摘要翻译： 等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。 此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

公开(公告)号：US20090242133A1

公开(公告)日：2009-10-01

申请号：US12407109

申请日：2009-03-19

申请人： Hiroyuki Nakayama ,  Masanobu Honda ,  Kenji Masuzawa ,  Manabu Iwata

发明人： Hiroyuki Nakayama ,  Masanobu Honda ,  Kenji Masuzawa ,  Manabu Iwata

IPC分类号： C23F1/08

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32541

摘要： An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface.

摘要翻译： 一种电极结构，其能够在面向基板的周缘部的部分处适当地增加处理空间中的电子密度。 在对晶片进行RIE处理的基板处理装置的处理室中，设置电极结构体的上部电极，使其位于处理室内的基座上。 上电极包括面对晶片的中心部分的内电极和面对晶片周缘部分的外电极。 内电极和外电极分别与第一和第二直流电源连接。 外部电极具有平行于晶片延伸的第一二次电子发射表面及其相对于第一二次电子发射表面倾斜延伸的第二二次电子发射表面。