公开(公告)号：US4527865A

公开(公告)日：1985-07-09

申请号：US579006

申请日：1984-02-15

申请人： Junichi Washo ,  Takaaki Miyazaki ,  Mitsuo Ishii ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Junichi Washo ,  Takaaki Miyazaki ,  Mitsuo Ishii ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： G02F1/17 ,  G02F1/15 ,  G02F1/153 ,  G09F9/30

CPC分类号： G02F1/1533

摘要： An electrochromic display device comprising a transparent substrate and a counter substrate sealingly joined together to define a cell for accommodating an electrolyte, a transparent electroconductive layer on an inner surface of the transparent substrate, a display electrode layer overlaying the transparent electroconductive layer and a counter electrode layer deposited on an inner surface of the counter substrate is featured by the provision of a transparent insulating layer between the transparent substrate and the transparent electroconductive layer.

摘要翻译： 一种电致变色显示装置，包括透明基板和对置基板，密封地连接在一起以限定用于容纳电解质的单元，在透明基板的内表面上的透明导电层，覆盖透明导电层的显示电极层和对置电极 在对置基板的内表面上沉积的层的特征在于在透明基板和透明导电层之间设置透明绝缘层。

公开(公告)号：US4868096A

公开(公告)日：1989-09-19

申请号：US92485

申请日：1987-09-03

申请人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

发明人： Muneo Nakayama ,  Akira Uehara ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Isamu Hijikata ,  Mitsuaki Minato ,  Eiichi Kashiwagi

IPC分类号： G03F7/11

CPC分类号： G03F7/11

摘要： The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

摘要翻译： 当将硅氧烷基涂膜在120℃的温度下进行等离子体处理时，可以改善基材上的硅酮基涂膜与外涂层（例如光致抗蚀剂层）的粘附性，而不引起裂纹。 在主要由氧组成的气体的气氛中。 等离子体处理的类似条件适用于当在包括以下步骤的步骤中需要对硅氧烷基涂膜进行图案化的步骤时，在其上形成光致抗蚀剂层，以光刻方法对光刻胶层进行图案化，选择性地蚀刻硅氧烷基涂膜 图案化的抗蚀剂层用作掩模并通过等离子体处理去除光致抗蚀剂层。

公开(公告)号：US4900582A

公开(公告)日：1990-02-13

申请号：US197021

申请日：1988-05-20

申请人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Eiichi Kashiwagi ,  Isamu Hijikata

发明人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Eiichi Kashiwagi ,  Isamu Hijikata

IPC分类号： C04B41/80 ,  C01B33/12 ,  C23C18/12 ,  H01L21/316 ,  H01L21/56 ,  H01L23/29

CPC分类号： H01L23/296 ,  H01L21/56 ,  H01L2924/0002 ,  H01L2924/09701

摘要： A coating solution for forming a silica-based film, having a given viscosity, is coated on a substrate such as a silicon wafer, this coating solution is dried to form a silica-based film, and this silica-based film is exposed to ultraviolet radiation in an atmosphere containing ozone at room temperature or while heating it preferably at a temperature of not more than 300.degree. C., particularly at a temperature of from 50.degree. to 200.degree. C., by means of a heating member such as a hot plate.The film quality of the silica-based film can be improved by exposing it to ultraviolet radiation in the atmosphere containing ozone.

摘要翻译： 将具有给定粘度的二氧化硅基膜形成用涂布液涂布在硅晶片等基板上，将该涂布液干燥，形成二氧化硅系膜，将该二氧化硅系膜暴露于紫外线 在室温下含有臭氧的气氛中或在不高于300℃，特别是在50℃至200℃的温度下，通过加热构件如热 盘子。 二氧化硅基膜的膜质量可以通过在含有臭氧的大气中暴露于紫外线而得到改善。

公开(公告)号：US4835017A

公开(公告)日：1989-05-30

申请号：US194248

申请日：1988-05-16

申请人： Tsutomu Ishikawa ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Tsutomu Ishikawa ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： C08L83/02 ,  C08K5/59 ,  C08L83/04 ,  C09D4/00 ,  C09D183/00 ,  C09D183/02 ,  H01L23/29

CPC分类号： H01L23/29 ,  C09D4/00 ,  H01L2924/0002

摘要： A liquid coating composition for forming a silica-based coating film on the surface of a substrate such as a semiconductor silicon wafer. A partial hydrolysis product of an alkoxy silane and an alkoxy or phenoxy compound of pentavalent antimony are dissolved in an organic solvent. As compared with a trivalent antimony compound used in the prior art, the pentavalent antimony compound as an additive is very effective in respect of the improvements in the uniformity and increased thickness of the silica-based coating film prepared from the coating composition as well as storage stability of the coating composition over time.

摘要翻译： 一种用于在诸如半导体硅晶片的基板的表面上形成二氧化硅基涂层膜的液体涂料组合物。 将烷氧基硅烷和五价锑的烷氧基或苯氧基化合物的部分水解产物溶解在有机溶剂中。 与现有技术中使用的三价锑化合物相比，作为添加剂的五价锑化合物对于由涂料组合物制备的二氧化硅基涂层的均匀性和增加的厚度以及存储 涂料组合物随时间的稳定性。

公开(公告)号：US4694040A

公开(公告)日：1987-09-15

申请号：US902029

申请日：1986-08-25

申请人： Akira Hashimoto ,  Toshihiro Nishimura ,  Muneo Nakayama ,  Hisashi Nakane ,  Shozo Toda

发明人： Akira Hashimoto ,  Toshihiro Nishimura ,  Muneo Nakayama ,  Hisashi Nakane ,  Shozo Toda

IPC分类号： C08G77/00 ,  C08G77/06 ,  C09D183/04 ,  C09D183/14 ,  C08K5/05

CPC分类号： C09D183/14

摘要： The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.

摘要翻译： 本发明提供了一种用于通过用液体涂料组合物涂覆表面而在诸如半导体硅晶片或玻璃板的基材的表面上提供高耐热和耐腐蚀的涂膜的新颖方法，该液体涂料组合物是低聚物 作为单烃基硅烷三醇RSi（OH）3的部分脱水缩合产物的有机聚硅氧烷，任选地与二烃基硅烷二醇R2Si（OH）2的混合物，R是一价烃基，例如 甲基或苯基，然后烘烤涂布的基材，将涂层转化为固化的树脂膜。

公开(公告)号：US4597882A

公开(公告)日：1986-07-01

申请号：US615736

申请日：1984-05-31

申请人： Toshihiro Nishimura ,  Muneo Nakayama ,  Akira Hashimoto

发明人： Toshihiro Nishimura ,  Muneo Nakayama ,  Akira Hashimoto

IPC分类号： C08G65/00 ,  C08G65/30 ,  C08G65/46 ,  C10M175/00 ,  C10M107/38

CPC分类号： C08G65/30 ,  C08G65/007 ,  C08G65/46 ,  C10M175/0075

摘要： Waste oils of synthetic lubricants containing fluorine atom are admixed with a solvent containing fluorine atom compatible with the waste oils thereby causing contaminants contained in the waste oils to float up into the upper region on the mixed solution. The solvent containing fluorine atom is removed from the solution of the lower layer by way of evaporation, distillation or the like. The regenerated oils of the synthetic lubricants containing fluorine atom thus obtained are completely colorless and transparent in appearance, and they have properties and performances quite similar to those of the fresh oils.

摘要翻译： 含有氟原子的合成润滑剂的废油与含有与废油相容的氟原子的溶剂混合，从而导致废油中含有的污染物浮起到混合溶液中的上部区域。 通过蒸发，蒸馏等从下层的溶液中除去含有氟原子的溶剂。 由此获得的含有氟原子的合成润滑剂的再生油在外观上是完全无色透明的，它们具有与新鲜油相似的性能和性能。

公开(公告)号：US4793862A

公开(公告)日：1988-12-27

申请号：US92510

申请日：1987-09-03

申请人： Tsutomu Ishikawa ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Tsutomu Ishikawa ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： H01L21/22 ,  H01L21/225 ,  C09K3/00

CPC分类号： H01L21/2255 ,  H01L21/2225

摘要： An improved silica-based film-forming composition for diffusion of antimony in the doping works of semiconductors is proposed which comprises an organic solvent, a partial hydrolysis product of an alkoxy silane compound and an antimony compound dissolved in the organic solvent. The antimony compound in the inventive composition is an alkoxy antimony or aryloxy antimony compound so that the problem of corrosion of the coating apparatus can be entirely avoided without decreasing the dopant concentration in the semiconductor substrate, as well as to provide a film-forming composition which is advantageously stable in storage.

摘要翻译： 提出了一种改进的二氧化硅基成膜组合物，用于在半导体的掺杂工艺中扩散锑，其包括有机溶剂，烷氧基硅烷化合物的部分水解产物和溶解在有机溶剂中的锑化合物。 本发明组合物中的锑化合物是烷氧基锑或芳氧基锑化合物，从而可以在不降低半导体衬底中的掺杂剂浓度的情况下完全避免涂覆装置的腐蚀问题，以及提供一种成膜组合物， 有利地在储存中稳定。

公开(公告)号：US4268539A

公开(公告)日：1981-05-19

申请号：US960652

申请日：1978-11-14

申请人： Muneo Nakayama ,  Toshihiro Nishimura ,  Akira Hashimoto ,  Hisashi Nakane ,  Teruo Kimura

发明人： Muneo Nakayama ,  Toshihiro Nishimura ,  Akira Hashimoto ,  Hisashi Nakane ,  Teruo Kimura

IPC分类号： C03C17/25 ,  C03C17/27 ,  C04B41/50 ,  H01B1/08 ,  H01B13/00 ,  B05D5/12 ,  B05D1/02 ,  B05D3/02 ,  C03C17/23

CPC分类号： C04B41/5009 ,  C03C17/27 ,  H01B1/08 ,  C03C2217/215 ,  C03C2218/11 ,  C03C2218/322

摘要： A liquid coating composition for formation of a transparent conductive film, which comprises a solution of indium nitrate in a .beta.-diketone or a mixture of a .beta.-diketone and another organic solvent or a reaction product of indium nitrate with a .beta.-diketone, an activator and an organic solvent other than a .beta.-diketone, is disclosed.When this coating composition is coated on a substrate and the coated substrate is heat-treated at a temperature higher than about 350.degree. C., there can be obtained a transparent conductive film having excellent transparency, electrical conductivity and mechanical strength.

摘要翻译： 用于形成透明导电膜的液体涂料组合物，其包含硝酸铟在β-二酮或β-二酮与另一种有机溶剂的混合物中的溶液或硝酸铟与β-二酮的反应产物， 活化剂和除β-二酮以外的有机溶剂。 当将这种涂料组合物涂覆在基材上并且涂覆的基材在高于约350℃的温度下进行热处理时，可以获得具有优异的透明性，导电性和机械强度的透明导电膜。

公开(公告)号：US4865649A

公开(公告)日：1989-09-12

申请号：US277497

申请日：1988-11-30

申请人： Eiichi Kashiwagi ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Eiichi Kashiwagi ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： C08L83/00 ,  C08L83/02 ,  C09D4/00 ,  C09D183/00 ,  C09D183/04

CPC分类号： C09D4/00 ,  C09D183/04

摘要： The coating solution of the invention is useful for forming a silica-based coating layer on a substrate such as semiconductor silicon wafers in the manufacturing process of semiconductor devices such as VLSIs. The coating solution is particularly advantageous to smooth a substrate surface having a difference in levels by completely filling the recessed areas. The coating solution is an organic solution of a cohydrolyzate of an alkoxy silane mixture composed of at least two kinds of di-, tri- and tetraalkoxy silane compounds such as a combination of methyl trimethoxy silane and tetramethoxy silane in a specified molar ratio and can be prepared by adding water to an organic solution of these alkoxy silane compounds without using any acid catalyst to effect the cohydrolysis of the silane compounds.

摘要翻译： 本发明的涂布溶液在诸如VLSI等半导体装置的制造过程中可用于在诸如半导体硅晶片的基板上形成二氧化硅基涂层。 涂覆溶液特别有利的是通过完全填充凹陷区域来平滑具有差异水平的基底表面。 涂布溶液是由至少两种二 - ，三 - 和四 - 烷氧基硅烷化合物（例如甲基三甲氧基硅烷和四甲氧基硅烷的组合）以特定摩尔比组成的烷氧基硅烷混合物的共水解产物的有机溶液，并且可以是 通过向这些烷氧基硅烷化合物的有机溶液中加入水而不使用任何酸催化剂来进行硅烷化合物的共水解制备。

公开(公告)号：US4474642A

公开(公告)日：1984-10-02

申请号：US514793

申请日：1983-07-18

申请人： Hisashi Nakane ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

发明人： Hisashi Nakane ,  Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura

IPC分类号： C23F1/00 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/312 ,  H01L21/3213 ,  C23F1/02 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/32139 ,  H01L21/312

摘要： The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.

摘要翻译： 本发明提供了一种用于在衬底的表面上提供铝膜的布线和电极的改进方法。 代替在金属膜上直接形成有机抗蚀剂层的常规方法，通过在金属膜和有机抗蚀剂之间设置主要由二氧化硅构成的辅助掩模层，可以显着提高图案的细度和精度 层; 并通过用含氟蚀刻气体通过有机抗蚀剂层的图案化掩模蚀刻辅助掩模层以形成图案化的掩蔽层，然后用含氯蚀刻气体通过蚀刻气体蚀刻金属膜，并进行图案蚀刻 图案化的辅助掩模层的掩模，然后最后去除剩余的辅助掩模层。