公开(公告)号：US09660138B2

公开(公告)日：2017-05-23

申请号：US15391160

申请日：2016-12-27

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshitaka Kuraoka ,  Shohei Oue ,  Masahiko Namerikawa ,  Morimichi Watanabe

IPC: H01L21/00 ,  H01L33/00 ,  H01L27/15 ,  H01L33/32 ,  H01L33/06 ,  H01L33/58 ,  H01L33/02 ,  H01L33/42 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.

公开(公告)号：US20160190392A1

公开(公告)日：2016-06-30

申请号：US15065994

申请日：2016-03-10

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshitaka Kuraoka ,  Shohei Oue ,  Masahiko Namerikawa ,  Morimichi Watanabe

IPC: H01L33/32 ,  H01L33/20 ,  H01L33/58 ,  H01L33/06 ,  H01L33/18

CPC classification number: H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting device that is inexpensive, is easy to manufacture, and has high light extraction efficiency is provided. The light emitting device includes an oriented polycrystalline substrate, a plurality of columnar light emitting parts, and a light confinement layer. The oriented polycrystalline substrate includes a plurality of oriented crystal grains. The plurality of columnar light emitting parts are discretely located on or above one main surface of the oriented polycrystalline substrate in areas in which there are no crystal defects, and are each a columnar part having a longitudinal direction matching a normal direction of the oriented polycrystalline substrate. The light confinement layer is made of a material having a lower refractive index than a material for the plurality of columnar light emitting parts, and is located on or above the oriented polycrystalline substrate so as to surround the plurality of columnar light emitting parts.

Abstract translation: 廉价的发光器件易于制造，并且具有高的光提取效率。 发光器件包括定向多晶衬底，多个柱状发光部件和光限制层。 定向多晶基板包括多个定向晶粒。 多个柱状发光部分离散地位于不存在晶体缺陷的区域中的取向多晶基板的一个主表面的上方或上方，并且分别具有与取向多晶基板的法线方向一致的纵向方向的柱状部 。 光限制层由折射率低于多个柱状发光部的材料的材料构成，位于取向多晶基板的上方或上方，以包围多个柱状发光部。

公开(公告)号：US11437233B2

公开(公告)日：2022-09-06

申请号：US16828417

申请日：2020-03-24

Applicant: NGK INSULATORS, LTD.

Inventor： Masashi Goto ,  Masahiro Sakai ,  Shohei Oue ,  Takashi Yoshino

IPC: H01L21/02 ,  C30B29/40 ,  H01L21/20

Abstract: A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

公开(公告)号：US12057307B2

公开(公告)日：2024-08-06

申请号：US18180272

申请日：2023-03-08

Applicant: NGK INSULATORS, LTD.

Inventor： Masahiro Sakai ,  Shohei Oue

IPC: B32B3/00 ,  C30B29/40 ,  H01L21/02 ,  C30B19/04

CPC classification number: H01L21/02005 ,  C30B29/406 ,  C30B19/04 ,  H01L21/02458 ,  H01L21/0254

Abstract: There is provided a Group-III element nitride semiconductor substrate including a first surface and a second surface, in which even when devices to be produced on the first surface are increased in size, variations in device characteristics between the devices in the same substrate are suppressed. A Group-III element nitride semiconductor substrate includes a first surface and a second surface. The Group-III element nitride semiconductor substrate satisfies at least one of the following items (1) to (3): (1) The main surface has a maximum height Wz of a surface waviness profile of 150 nm or less; (2) The main surface has a root mean square height Wq of the surface waviness profile of 25 nm or less; (3) The main surface has an average length WSm of surface waviness profile elements of 0.5 mm or more.

公开(公告)号：US11245054B2

公开(公告)日：2022-02-08

申请号：US16826826

申请日：2020-03-23

Applicant: NGK INSULATORS, LTD.

Inventor： Masahiro Sakai ,  Shohei Oue ,  Masashi Goto ,  Takashi Yoshino

IPC: H01L33/18 ,  H01L33/32 ,  H01L33/54 ,  H01L33/00 ,  C30B29/38 ,  H01L21/02

Abstract: A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a group 13 nitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the group 13 nitride, metal of a group 13 element and/or void is present between the raised part and supporting substrate.

公开(公告)号：US09653651B2

公开(公告)日：2017-05-16

申请号：US15065994

申请日：2016-03-10

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshitaka Kuraoka ,  Shohei Oue ,  Masahiko Namerikawa ,  Morimichi Watanabe

IPC: H01L21/00 ,  H01L33/00 ,  H01L27/15 ,  H01L33/32 ,  H01L33/08 ,  H01L33/16 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L33/58 ,  H01L33/46

CPC classification number: H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting device that is inexpensive, is easy to manufacture, and has high light extraction efficiency is provided. The light emitting device includes an oriented polycrystalline substrate, a plurality of columnar light emitting parts, and a light confinement layer. The oriented polycrystalline substrate includes a plurality of oriented crystal grains. The plurality of columnar light emitting parts are discretely located on or above one main surface of the oriented polycrystalline substrate in areas in which there are no crystal defects, and are each a columnar part having a longitudinal direction matching a normal direction of the oriented polycrystalline substrate. The light confinement layer is made of a material having a lower refractive index than a material for the plurality of columnar light emitting parts, and is located on or above the oriented polycrystalline substrate so as to surround the plurality of columnar light emitting parts.

公开(公告)号：US20170110624A1

公开(公告)日：2017-04-20

申请号：US15391160

申请日：2016-12-27

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshitaka Kuraoka ,  Shohei Oue ,  Masahiko Namerikawa ,  Morimichi Watanabe

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/62 ,  H01L33/02 ,  H01L33/42 ,  H01L33/32 ,  H01L33/58

CPC classification number: H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.