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公开(公告)号：US11966164B2
公开(公告)日：2024-04-23
申请号：US16759142
申请日：2018-10-24
CPC分类号： G03F7/423 , G03F7/0045 , G03F7/0752 , G03F7/0755 , G03F7/0757 , G03F7/11 , G03F7/422 , G03F7/425
摘要： A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1):
R1aR2bSi(R3)4−(a+b) Formula (1)
(wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).-
公开(公告)号：US12044969B2
公开(公告)日：2024-07-23
申请号：US17438786
申请日：2020-03-05
IPC分类号： H01L51/00 , C08G59/24 , G03F7/11 , H01L21/3105
CPC分类号： G03F7/11 , C08G59/24 , C08G59/245 , H01L21/31058
摘要： A resist underlayer film-forming composition revealing high reflow properties while applying and heating the composition on a substrate, allowing a flat application on a multi-level substrate thus forming a flat film. The composition includes a copolymer having a repeating structural unit of the following Formula (1) and/or a repeating structural unit of the following Formula (2) and an organic solvent:
(in Formulae (1) and (2), R1 is a functional group of Formula (3); in Formula (3), Q1 and Q2 are each independently a hydrogen atom or a C1-5 alkyl group, and * is a dangling bond to an oxygen atom; and in Formula (2), X1 is a C1-50 organic group, and i and j are each independently 0 or 1).-
3.发明授权公开(公告)号：US11674051B2
公开(公告)日：2023-06-13
申请号：US16647146
申请日：2018-09-12
IPC分类号： C09D163/00 , G03F7/11 , G03F7/20 , G03F7/26 , H01L21/027
CPC分类号： C09D163/00 , G03F7/11 , G03F7/2002 , G03F7/26 , H01L21/0274
摘要： A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2):
and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8):
where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.-
4.发明授权公开(公告)号：US11531269B2
公开(公告)日：2022-12-20
申请号：US16339555
申请日：2017-10-02
IPC分类号： H01L21/027 , G03F7/11 , G03F7/40 , G03F7/20 , H01L21/033 , H01L21/02 , C09D183/04 , C08G77/18 , C08G77/24 , C08G77/20 , G03F7/075 , H01L21/311
摘要： Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.
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5.发明授权公开(公告)号：US11281104B2
公开(公告)日：2022-03-22
申请号：US16628135
申请日：2018-07-06
发明人： Wataru Shibayama , Makoto Nakajima
IPC分类号： G03F7/11 , C08G77/14 , C09D183/06 , G03F7/16 , G03F7/32 , H01L21/027 , H01L21/3065 , H01L21/308
摘要： A composition for forming a resist underlayer film for lithography, the resist underlayer film for lithography containing silicon and being dissolved and removed with an alkaline developer in accordance with a resist pattern together with an upper layer resist during development of the upper layer resist, the composition comprising a component, which is a silane compound containing a hydrolyzable silane, a hydrolysate of the silane, a hydrolytic condensate of the silane, or any combination of these, and an element, which is an element of causing dissolution in an alkaline developer. The element, which is an element of causing dissolution in an alkaline developer, is contained in the structure of the compound as the component. The element, which is an element of causing dissolution in an alkaline developer, is a photoacid generator.
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公开(公告)号：US12084592B2
公开(公告)日：2024-09-10
申请号：US16339489
申请日：2017-10-02
IPC分类号： C09D183/06 , B05D1/32 , B05D1/36 , B05D3/10 , B05D7/00 , B05D7/04 , B05D7/24 , C08G77/38 , C09D183/04 , G03F7/11 , G03F7/16 , G03F7/40 , H01L21/027
CPC分类号： C09D183/06 , B05D1/32 , B05D1/36 , B05D3/10 , B05D7/00 , B05D7/04 , B05D7/24 , C08G77/38 , C09D183/04 , G03F7/11 , G03F7/16 , G03F7/40 , H01L21/027
摘要： A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1):
R1aSi(R2)4-a Formula (1)
and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.-
公开(公告)号：US12072630B2
公开(公告)日：2024-08-27
申请号：US17055433
申请日：2019-05-21
IPC分类号： G03F7/11 , C08G8/26 , C08G10/00 , C09D161/12 , C09D161/18 , H01L21/027 , H01L21/311
CPC分类号： G03F7/11 , C08G8/26 , C08G10/00 , C09D161/12 , C09D161/18 , H01L21/0274 , H01L21/31144
摘要： A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.
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8.发明授权公开(公告)号：US11215927B2
公开(公告)日：2022-01-04
申请号：US16243548
申请日：2019-01-09
发明人： Ju-Young Kim , Hyunwoo Kim , Makoto Nakajima , Satoshi Takeda , Shuhei Shigaki , Wataru Shibayama
摘要： Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol. X—Si(R1)2(R2) [Formula 1] Y—Si(R3)3 [Formula 7]
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9.发明授权公开(公告)号：US10910220B2
公开(公告)日：2021-02-02
申请号：US16082189
申请日：2017-02-10
发明人： Shuhei Shigaki , Hiroaki Yaguchi , Makoto Nakajima
IPC分类号： G03F7/38 , H01L21/027 , H01L21/3105 , C09D183/06 , H01L21/02 , H01L21/033 , C09D183/04 , C09D183/08 , C08G77/14 , C08G77/28 , C08G77/16 , C08G77/12 , C08G77/18 , C08G77/50
摘要： A method for flatly covering a semiconductor substrate using a silicon-containing composition. A method for producing a polysiloxane-coated substrate, including a first step for forming a first polysiloxane coating film by applying a first polysiloxane composition for coating to a stepped substrate and firing the composition thereon and a second step for forming a second film by applying a second polysiloxane composition for coating to the first film and firing the composition thereon. The second film has an Iso-dense bias of 50 nm or less; the first polysiloxane contains a hydrolysis-condensation product of a hydrolyzable silane starting material containing a first hydrolyzable silane having four hydrolyzable groups in each molecule at a ratio of 0-100% by mole in all the silanes; and the second polysiloxane contains silanol groups at a ratio of 30% by mole or less relative to Si atoms, while having a weight average molecular weight of 1,000-50,000.
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公开(公告)号：US11884839B2
公开(公告)日：2024-01-30
申请号：US16329175
申请日：2017-08-28
发明人： Yuki Endo , Hiroaki Yaguchi , Makoto Nakajima
IPC分类号： G03F7/40 , G03F7/004 , G03F7/075 , G03F7/11 , C08G77/38 , C09D183/04 , C08G77/18 , C08G77/00
CPC分类号： C09D183/04 , C08G77/18 , C08G77/38 , G03F7/0045 , G03F7/0752 , G03F7/0757 , G03F7/11 , G03F7/40 , C08G77/80
摘要： An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0≤(organic group)/(Si)≤0.29 on average. Method for producing semiconductor device, including steps: forming resist film on a semiconductor substrate; exposing resist film and developing resist after exposure to obtain resist pattern; applying the coating composition onto patterned resist film to embed the polysiloxane; curing the embedded polysiloxane and then etching resist film to reverse the pattern; and processing substrate using polysiloxane film.
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