公开(公告)号：US20160005710A1

公开(公告)日：2016-01-07

申请号：US14728891

申请日：2015-06-02

Applicant: NXP B.V.

Inventor： Sven Walczyk ,  Johan de Beer ,  Erik Eltink ,  Amar Mavinkurve

IPC: H01L23/00 ,  B23K1/20 ,  B23K1/00 ,  H01L23/495 ,  H01L21/48

CPC classification number: H01L24/81 ,  B23K1/0016 ,  B23K1/20 ,  H01L23/49572 ,  H01L23/49586 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/10175 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/81011 ,  H01L2224/81022 ,  H01L2224/81097 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/8136 ,  H01L2224/81395 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A method of attaching an electronic component to a metal substrate, wherein the electronic component comprises solder provided on an exposed solder region. The method comprising: forming a metal-based compound layer on the substrate; placing the electronic component on the metal substrate such that the solder region is in contact with a contact region of the metal-based compound layer; and heating the solder region such that the contact region of the metal-based compound layer dissolves and the solder region forms an electrical connection between the electronic component and the metal substrate. The metal-based compound layer can have a minimum thickness of 10 nm.

Abstract translation: 一种将电子部件附接到金属基板的方法，其中所述电子部件包括设置在暴露的焊料区域上的焊料。 该方法包括：在基底上形成金属基化合物层; 将电子部件放置在金属基板上，使得焊料区域与金属基化合物层的接触区域接触; 并且加热焊料区域使得金属基化合物层的接触区域溶解，并且焊料区域形成电子部件和金属基板之间的电连接。 金属基化合物层可以具有10nm的最小厚度。

公开(公告)号：US08981566B2

公开(公告)日：2015-03-17

申请号：US13890055

申请日：2013-05-08

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Sven Walczyk ,  Roelf Anco Jacob Groenhuis ,  Rolf Brenner ,  Emiel De Bruin

IPC: H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L21/78 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05016 ,  H01L2224/05088 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/20 ,  H01L2224/291 ,  H01L2224/32105 ,  H01L2224/32113 ,  H01L2224/32237 ,  H01L2224/33181 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/05552

Abstract: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140, 610) such as a solder cap, a further semiconductor die or a combination thereof in conductive contact with the solder portion, said solder cap extending over the encapsulation material. A further solder cap (150) may be provided over the first surface. A method of manufacturing such a discrete semiconductor device package is also disclosed.

Abstract translation: 公开了一种分立半导体器件封装（100），包括半导体管芯（110），其具有第一表面和与所述第一表面相对的第二表面，所述第二表面承载触点（112）; 所述接触件上的导电体（120）; 横向封装所述导电体的封装材料（130） 以及与焊料帽导电接触的诸如焊料帽，另外的半导体管芯或其组合的封盖构件（140,610），所述焊帽覆盖在封装材料上。 可以在第一表面上设置另外的焊锡帽（150）。 还公开了制造这种分立半导体器件封装的方法。

公开(公告)号：US09263335B2

公开(公告)日：2016-02-16

申请号：US14607587

申请日：2015-01-28

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Sven Walczyk ,  Roelf Anco Jacob Groenhuis ,  Rolf Brenner ,  Emiel De Bruin

IPC: H01L21/00 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56

CPC classification number: H01L21/78 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05016 ,  H01L2224/05088 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/20 ,  H01L2224/291 ,  H01L2224/32105 ,  H01L2224/32113 ,  H01L2224/32237 ,  H01L2224/33181 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/05552

Abstract: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140, 610) such as a solder cap, a further semiconductor die or a combination thereof in conductive contact with the solder portion, said solder cap extending over the encapsulation material. A further solder cap (150) may be provided over the first surface. A method of manufacturing such a discrete semiconductor device package is also disclosed.