摘要:
The present invention pertains to compounds and polymers which incorporate a boronic acid sensor group (SG) of the formula (I): wherein: J is independently —CH2— or —CH2CH2—; n is independently 0, 1, 2, or 3; and each RR, if present, is independently a ring substituent; and wherein the ring attachment (i.e., where sensor group is attached) is via the 3-, 4-, 5-, or 6-ring position. Such compounds and polymers are useful in the selective chemical detection and/or quantitation of alpha-hydroxy carboxylic acids, such as lactic acid/lactate and malic acid/malate. The present invention also pertains to methods of preparing such compounds and polymers; methods and assays which employ these compounds and polymers; devices (e.g., holographic sensors) and kits for use in such methods and assays, etc.
摘要:
Pneumatic rubber tire having at least one component of a polybutadiene-rich rubber composition comprised of a blend of a continuous phase of a specialized cis 1,4-polybutadiene rubber and a dispersed phase comprised of a composite of styrene/butadiene elastomer which contains a dispersion of at least partially exfoliated, intercalated, clay platelets, wherein said cis 1,4-polybutadiene rubber and styrene/butadiene elastomer have spatially defined glass transition temperatures, wherein said blend contains amorphous silica and carbon black reinforcement. Such tire component may be, for example, a circumferential tread having a running surface intended to be ground-contacting or a sidewall insert.
摘要:
The present invention relates to unglycosylated isolated and purified recombinant polypeptides comprising a fusion protein able to bind to autoantibodies produced in response to an autoimmune disease associated with an immune reaction to a TSH-receptor (TSHR). Also disclosed are methods of detecting and/or quantifying such autoantibodies using the isolated and purified recombinant polypeptides and respective kits.
摘要:
The present invention pertains to compounds and polymers which incorporate a boronic acid sensor group (SG) of the formula (I): wherein: J is independently —CH2— or —CH2CH2—; n is independently 0, 1, 2, or 3; and each RR, if present, is independently a ring substituent; and wherein the ring attachment (i.e., where sensor group is attached) is via the 3-, 4-, 5-, or 6-ring position. Such compounds and polymers are useful in the selective chemical detection and/or quantitation of alpha-hydroxy carboxylic acids, such as lactic acid/lactate and malic acid/malate. The present invention also pertains to methods of preparing such compounds and polymers; methods and assays which employ these compounds and polymers; devices (e.g., holographic sensors) and kits for use in such methods and assays, etc.
摘要:
In some embodiments a connector is to couple a peripheral, and a detector coupled to the connector is to detect if the peripheral is disconnected from the connector in response to a first reserved pin and a second reserved pin. Other embodiments are described and claimed.
摘要:
This invention relates to a tire having a rubber tread containing functionalized carbon nanotubes and particulate reinforcement comprised of precipitated silica.
摘要:
The present invention is directed to a method of conducting static electricity in a pneumatic tire, comprising the steps of mixing a rubber compound comprising at least one diene based rubber, from 60 to 150 phr of precipitated silica, less than 40 phr of carbon black, and from 1 to 10 phr of carbon nanotubes having a length of at least 5 microns; forming a tire tread from the rubber compound; and including the tire tread in the tire; wherein the volume resistivity of the tire tread is less than 1×109 ohm-cm as measured by ASTM D257-98.
摘要:
A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.