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    Semiconductor Light Emitting Device and Manufacturing Method Thereof
    3.
    发明申请
    Semiconductor Light Emitting Device and Manufacturing Method Thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20080145961A1

    公开(公告)日：2008-06-19

    申请号：US12031068

    申请日：2008-02-14

    申请人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

    发明人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

    IPC分类号： H01L21/00

    CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2933/0016

    摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.

    摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

    Semiconductor light-emitting device and fabrication method of the same
    5.
    发明授权
    Semiconductor light-emitting device and fabrication method of the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US07605403B2

    公开(公告)日：2009-10-20

    申请号：US11125142

    申请日：2005-05-10

    申请人： Naochika Horio ,  Masahiko Tsuchiya ,  Munehiro Kato

    发明人： Naochika Horio ,  Masahiko Tsuchiya ,  Munehiro Kato

    IPC分类号： H01L27/15

    CPC分类号： H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/05001 ,  H01L2224/13

    摘要： A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.

    摘要翻译： 半导体发光器件可以包括氮化物半导体发光层，并且可以快速高效地向整个发光区域提供电流以输出高强度光。 半导体发光装置可以包括：透明基板; 第一导电型氮化物半导体层; 氮化物半导体发光层; 第二导电型氮化物半导体层; 切割第二导电型氮化物半导体层和氮化物半导体发光层并露出第一导电型氮化物半导体层以限定台面有源区和台面电极绘图区的切口区; 用于第一导电类型的电极; 用于第二导电类型的欧姆电极; 以及支撑基板，其包括用于第一和第二导电类型的连接构件。

    Manufacturing method for semiconductor light emitting device
    6.
    发明授权
    Manufacturing method for semiconductor light emitting device 有权
    半导体发光元件的制造方法

    公开(公告)号：US07595206B2

    公开(公告)日：2009-09-29

    申请号：US12031068

    申请日：2008-02-14

    申请人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

    发明人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

    IPC分类号： H01L21/00 ,  H01L21/302

    CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2933/0016

    摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.

    摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

    Semiconductor light emitting device on insulating substrate and its manufacture method
    7.
    发明授权
    Semiconductor light emitting device on insulating substrate and its manufacture method 有权
    绝缘基板上的半导体发光器件及其制造方法

    公开(公告)号：US07271426B2

    公开(公告)日：2007-09-18

    申请号：US10971305

    申请日：2004-10-22

    申请人： Naochika Horio ,  Masahiko Tsuchiya ,  Munehiro Kato

    发明人： Naochika Horio ,  Masahiko Tsuchiya ,  Munehiro Kato

    IPC分类号： H01L33/00 ,  H01L23/48 ,  H01L23/52 ,  H01L21/00 ,  H01L21/44

    CPC分类号： H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2224/05001 ,  H01L2224/13

    摘要： A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.

    摘要翻译： 半导体LED器件包括：层叠有n型氮化物半导体层，氮化物半导体发光层和p型氮化物半导体层的透明衬底; 凹陷区域切割p型层和发光层并暴露n型层，限定多个台面活性区域和台面电极上拉区域; n侧电极，形成在所述凹部中的所述凹部中的所述n型层上，并且延伸到所述台面电极上拉区域; p侧电极，形成在各台面活性区域的p型层上; 以及支撑基板，其包括连接到n面电极的n侧连接构件和与p侧电极连接并面向p侧电极的p侧连接构件。

    GALLIUM NITRIDE COMPOUND SEMICONDUCTOR DEVICE
    9.
    发明申请
    GALLIUM NITRIDE COMPOUND SEMICONDUCTOR DEVICE 有权
    氮化镓化合物半导体器件

    公开(公告)号：US20060151802A1

    公开(公告)日：2006-07-13

    申请号：US11276653

    申请日：2006-03-09

    申请人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

    发明人： Masahiko Tsuchiya ,  Naochika Horio ,  Kenichi Morikawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/007 ,  H01L33/0095 ,  H01L2224/14

    摘要： A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

    摘要翻译： GaN化合物半导体器件能够具有自由工艺设计并具有最佳的器件特性。 该装置可以包括包括n型GaN化合物半导体层和p型GaN化合物半导体层的III族氮化物化合物半导体层叠结构。 可以在n型GaN化合物半导体层上形成n电极，并且可以在p型GaN化合物半导体层上形成p电极。 n电极优选包括与n型GaN化合物半导体层接触的1〜10nm的Al层，以及形成在Al层上的任何Rh，Ir，Pt和Pd的金属层。 p电极可以由与p型GaN接触的Pd，Pt，Rh，Pt / Rh，Pt / Ag，Rh / Ag，Pd / Rh或Pd / Ag的200nm或更少的层制成 化合物半导体层。 两个电极都可以与相应的n型/ p型GaN半导体进行欧姆接触，而不需要主动退火。

    Semiconductor light emitting device and manufacturing method thereof
    10.
    发明申请
    Semiconductor light emitting device and manufacturing method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20050281303A1

    公开(公告)日：2005-12-22

    申请号：US11154814

    申请日：2005-06-17

    申请人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

    发明人： Naochika Horio ,  Munehiro Kato ,  Masahiko Tsuchiya ,  Satoshi Tanaka

    IPC分类号： H01L33/26 ,  H01L33/40 ,  H01L33/62 ,  H01S5/00

    CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2933/0016

    摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.

    摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。