公开(公告)号：US06842658B2

公开(公告)日：2005-01-11

申请号：US09791666

申请日：2001-02-26

申请人： Masaru Izawa ,  Masahito Mori ,  Nobuyuki Negishi ,  Shinichi Tachi

发明人： Masaru Izawa ,  Masahito Mori ,  Nobuyuki Negishi ,  Shinichi Tachi

IPC分类号： H01L21/302 ,  G05B19/418 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/31288 ,  G05B2219/32053 ,  G05B2219/32198 ,  G05B2219/45031 ,  H01L21/67276 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/26 ,  Y02P90/86

摘要： Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.

摘要翻译： 将通过使用半导体器件制造设备中配备的计算机的数据库和过程建模，通过使用包括厚度和质量的晶片处理历史的输入来提供自动生成处理条件。 配备在半导体器件制造设备中的计算机从生产线管理计算机获得晶片处理和检查结果，以帮助输入过程历史。 制造设备中的计算机可以连接到通信网络上制造设备制造商中的计算机，以自动提供过程条件和维护计划。

公开(公告)号：US06927173B2

公开(公告)日：2005-08-09

申请号：US10315054

申请日：2002-12-10

申请人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

发明人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

摘要： Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

摘要翻译： 由于环境污染防治法，PFC（全氟化碳）和HFC（氢氟碳化合物）两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 含有氟原子的蚀刻气体被引入到等离子体室中。 在进行等离子体蚀刻的区域中，使含氟气体等离子体与固态碳反应，以产生分子化学物质，例如CF 4，CF 2， SUB 3，CF 3 3和C 2 F 4 S 3用于蚀刻。 该方法确保了高蚀刻速率和高选择性，同时保持了工艺窗口宽。

公开(公告)号：US5891252A

公开(公告)日：1999-04-06

申请号：US766818

申请日：1996-12-13

申请人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

发明人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

IPC分类号： C23C16/00 ,  H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3341

摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.

公开(公告)号：US06511608B1

公开(公告)日：2003-01-28

申请号：US09662162

申请日：2000-09-14

申请人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

发明人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC分类号： H01L213065

CPC分类号： H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

摘要： Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

摘要翻译： 由于环境污染防治法，PFC（全氟化碳）和HFC（氢氟碳化合物）两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 含有氟原子的蚀刻气体被引入到等离子体室中。 在进行等离子体蚀刻的区域中，使含氟气体等离子体与固态碳反应，以产生分子化学物质如CF4，CF2，CF3和C2F4用于蚀刻。 该方法确保了高蚀刻速率和高选择性，同时保持了工艺窗口宽。

公开(公告)号：US6033481A

公开(公告)日：2000-03-07

申请号：US225971

申请日：1999-01-06

申请人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

发明人： Ken'etsu Yokogawa ,  Tetsuo Ono ,  Kazunori Tsujimoto ,  Naoshi Itabashi ,  Masahito Mori ,  Shinichi Tachi ,  Keizo Suzuki

IPC分类号： C23C16/00 ,  H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3341

摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.

摘要翻译： 公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。 利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。 用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。 通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。 此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。

公开(公告)号：US06136214A

公开(公告)日：2000-10-24

申请号：US840647

申请日：1997-04-25

申请人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

发明人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  C23F1/02

CPC分类号： H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

摘要： Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. To accommodate such a problem, an etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce a molecular chemical species such as CF.sub.4, CF.sub.2, CF.sub.3 and C.sub.2 F.sub.4 for etching. This method assures a high etching rate and high selectivity while keeping a process window wide.

摘要翻译： 由于环境污染防治法，PFC（全氟化碳）和HFC（氢氟碳化合物）两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 为了解决这个问题，将含有氟原子的蚀刻气体引入等离子体室。 在进行等离子体蚀刻的区域中，使含氟气体等离子体与固态碳反应，以产生用于蚀刻的分子化学物质如CF4，CF2，CF3和C2F4。 该方法在保持工艺窗口宽的同时确保高蚀刻速率和高选择性。

公开(公告)号：US06673685B2

公开(公告)日：2004-01-06

申请号：US10083397

申请日：2002-02-27

申请人： Masahito Mori ,  Naoshi Itabashi ,  Masaru Izawa

发明人： Masahito Mori ,  Naoshi Itabashi ,  Masaru Izawa

IPC分类号： H01L21336

CPC分类号： H01L21/28123 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

摘要： A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combination. The process is also preferably characterized by performing trimming and drying cleaning in a vacuum environment and may also include steps of inspecting dimensions and contamination in a vacuum environment. The process can be implemented to provide the effects of forming a gate no longer than 50 nm (beyond the limit of exposure) without restrictions on the resist thickness; reducing contamination resulting from transfer of wafers from one step to next, thereby improving yields; preventing resist from hydrolysis by ArF laser, thereby reducing roughening which adversely affects the gate width; and ensuring stable yields despite variation in dimensions and contamination owing to the additional dry cleaning step and feed-forward control based on CD inspection and contamination inspection.

摘要翻译： 用于经济有效地制造不超过50nm的栅电极的方法，其超出了曝光的限度，其特征在于组合执行的具有高抗蚀剂选择性的栅电极修整和掩模修剪。 该方法还优选的特征在于在真空环境中进行修整和干燥清洁，并且还可以包括在真空环境中检查尺寸和污染的步骤。 可以实现该过程以提供形成栅极不超过50nm（超过曝光极限）而不限制抗蚀剂厚度的效果; 减少晶片从一步转移到下一步导致的污染，从而提高产量; 防止ArF激光器的抗水解，从而减少对栅极宽度有不利影响的粗糙化; 并确保稳定的产量，尽管由于额外的干洗步骤和基于CD检查和污染检查的前馈控制而导致尺寸和污染的变化。

公开(公告)号：US08546266B2

公开(公告)日：2013-10-01

申请号：US13212909

申请日：2011-08-18

申请人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

发明人： Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi

IPC分类号： H01L21/302

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

公开(公告)号：US20080038329A1

公开(公告)日：2008-02-14

申请号：US11836514

申请日：2007-08-09

申请人： Tetsuya Uchida ,  Masahito Mori ,  Hiroshi Oda

发明人： Tetsuya Uchida ,  Masahito Mori ,  Hiroshi Oda

IPC分类号： A61K9/127 ,  A61K39/00 ,  A61P37/00

CPC分类号： A61K9/127 ,  A61K39/385 ,  A61K39/39 ,  A61K2039/55555 ,  Y02A50/386 ,  Y02A50/388 ,  Y02A50/39 ,  Y02A50/412 ,  Y02A50/466

摘要： The present invention provides a T cell activator comprising an antigen-bound phospholipid membrane, wherein the phospholipid membrane comprises a phospholipid having an acyl group having one unsaturated bond and 14 to 24 carbon atoms or a hydrocarbon group having one unsaturated bond and 14 to 24 carbon atoms, and a phospholipid membrane stabilizer, and wherein the antigen is bound to the surface of the phospholipid membrane.

摘要翻译： 本发明提供一种包含抗原结合磷脂膜的T细胞活化剂，其中磷脂膜包含具有一个不饱和键和14-24个碳原子的酰基或具有一个不饱和键的烃基和14-24个碳原子的磷脂 原子和磷脂膜稳定剂，并且其中所述抗原结合到磷脂膜的表面。

公开(公告)号：US20070232067A1

公开(公告)日：2007-10-04

申请号：US11692241

申请日：2007-03-28

申请人： Kousa Hirota ,  Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Toshio Masuda

发明人： Kousa Hirota ,  Masahito Mori ,  Naoyuki Kofuji ,  Naoshi Itabashi ,  Toshio Masuda

IPC分类号： H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/28123

摘要： The invention provides a semiconductor fabrication method comprising a deposition step for depositing a laminated film on a semiconductor substrate having a region in which a mask pattern is formed sparsely and a region in which the mask pattern is formed densely, a lithography step s1 for forming a mask pattern, a cleaning step S11C for removing deposits in the apparatus, a trimming step S3 for trimming the mask pattern, and dry etching steps S4 and S5 for transferring the mask pattern on the laminated film, wherein a seasoning step S11S followed by a deposition step S2 is introduced either before or after the trimming step S3.

摘要翻译： 本发明提供了一种半导体制造方法，包括：沉积步骤，用于在具有稀疏形成掩模图案的区域的半导体衬底上沉积层压膜，以及密集形成掩模图案的区域;用于形成的光刻步骤s1 掩模图案，用于去除设备中的沉积物的清洁步骤S111，用于修整掩模图案的修整步骤S3以及用于将掩模图案转印到层压膜上的干蚀刻步骤S 4和S 5，其中调味 在修整步骤S 3之前或之后引入步骤S11A，然后进行沉积步骤S2。