中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.013 seconds)

    Light emitting device
    1.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US09048405B2

    公开(公告)日：2015-06-02

    申请号：US14133920

    申请日：2013-12-19

    Applicant: Nichia Corporation

    Inventor： Daisuke Sanga ,  Takuya Okada ,  Keisuke Sejiki ,  Kunihito Sugimoto ,  Takao Kosugi ,  Dai Wakamatsu

    IPC: H01L33/60 ,  H01L33/50 ,  H01L25/075 ,  H01L33/44

    CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The light emitting device comprising a light emitting element; and a wavelength converting member having a first face and a second face, in which light emitted from the light emitting element enters in through the first face, and a part of the second face serves as a light emitting face, wherein the light emitting element further comprises a reflection control structure around the light emitting face of the second face, and the reflection control structure comprises a reflection film on the wavelength converting member and an anti-reflection film on the reflection film.

    Abstract translation: 发光器件包括发光元件; 以及具有第一面和第二面的波长转换构件，其中从发光元件发射的光通过第一面进入，并且第二面的一部分用作发光面，其中发光元件进一步 包括在第二面的发光面周围的反射控制结构，反射控制结构在波长转换部件上具有反射膜，反射膜上具有防反射膜。

    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    SAPPHIRE基板和半导体发光器件

    公开(公告)号：US20140306265A1

    公开(公告)日：2014-10-16

    申请号：US14314516

    申请日：2014-06-25

    Applicant: NICHIA CORPORATION

    Inventor： Junya NARITA ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

    IPC: H01L33/32

    CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

    Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

    Abstract translation: 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

    Nitride semiconductor light-emitting element and method of manufacturing the same
    6.
    发明授权
    Nitride semiconductor light-emitting element and method of manufacturing the same 有权

    公开(公告)号：US11876148B2

    公开(公告)日：2024-01-16

    申请号：US17194008

    申请日：2021-03-05

    Applicant: NICHIA CORPORATION

    Inventor： Takuya Okada

    IPC: H01L29/15 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/0075 ,  H01L29/155 ,  H01L33/007 ,  H01L33/06 ,  H01L33/325

    Abstract: A nitride semiconductor light-emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer includes: one or more well layers comprising a first well layer that is nearest to the n-side nitride semiconductor layer, and one or more barrier layers comprising a first barrier layer between the first well layer and the n-side nitride semiconductor layer. The first barrier layer comprises a Si-doped InGaN barrier layer and an undoped GaN barrier layer in this order from the n-side nitride semiconductor layer side.

    Light emitting device
    7.
    发明授权
    Light emitting device 有权

    公开(公告)号：US12009454B2

    公开(公告)日：2024-06-11

    申请号：US17507058

    申请日：2021-10-21

    Applicant: NICHIA CORPORATION

    Inventor： Takuya Okada

    IPC: H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/06 ,  H01L33/325

    Abstract: A light-emitting device includes an n-side semiconductor layer comprising an n-type contact layer and an intermediate layer located on the n-type contact layer; an active layer located on the intermediate layer; and a p-side semiconductor layer located on the active layer. The intermediate layer includes at least one stacked portion comprising a first layer and a second layer. The first layer is an n-type nitride semiconductor layer comprising an n-type impurity, Al, and Ga. The second layer is a nitride semiconductor layer that includes Al and Ga, has a lower n-type impurity concentration than the first layer, and has a larger thickness than the first layer. An Al composition ratio of the first layer is higher than an Al composition ratio of the second layer.

    Nitride semiconductor light-emitting element and method of manufacturing the same
    8.
    发明授权
    Nitride semiconductor light-emitting element and method of manufacturing the same 有权

    公开(公告)号：US10978610B2

    公开(公告)日：2021-04-13

    申请号：US16556162

    申请日：2019-08-29

    Applicant: NICHIA CORPORATION

    Inventor： Takuya Okada

    IPC: H01L33/00 ,  H01L33/32 ,  H01L29/15 ,  H01L33/06

    Abstract: A method of manufacturing a nitride semiconductor light-emitting element includes growing an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. The step of growing the active layer includes growing a first barrier layer before growing a well layer. The step of growing the first barrier layer includes a first stage where a first nitride semiconductor layer containing In is grown with a first concentration of n-type impurity, a second stage where a second nitride semiconductor layer containing In is grown with a second concentration of n-type impurity higher than the first concentration, a third stage where a third nitride semiconductor layer containing In is grown with a third concentration of n-type impurity lower than the second concentration, and a fourth stage where a fourth nitride semiconductor layer is grown under a growth condition in which an amount of an impurity source gas is decreased or stopped.

    Method of manufacturing light emitting element
    9.
    发明授权
    Method of manufacturing light emitting element 有权

    公开(公告)号：US09873170B2

    公开(公告)日：2018-01-23

    申请号：US15079052

    申请日：2016-03-24

    Applicant: NICHIA CORPORATION

    Inventor： Junya Narita ,  Takuya Okada

    IPC: H01L33/00 ,  B23K26/40 ,  H01L33/32

    CPC classification number: B23K26/40 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/32

    Abstract: A method of manufacturing a light emitting element includes providing a wafer having a substrate and a semiconductor layered body provided on an upper surface of the substrate, irradiating the substrate with laser light from a side of a lower surface opposite to the upper surface of the substrate to form modified regions in the substrate, and dividing the wafer into light emitting elements at the modified regions as a starting point. The semiconductor layered body includes a first p-type semiconductor layer made of a nitride semiconductor and provided on the upper surface of the substrate, an n-type semiconductor layer made of a nitride semiconductor and provided on the first p-type semiconductor layer, an active layer made of a nitride semiconductor and provided on the n-type semiconductor layer, and a second p-type semiconductor layer made of a nitride semiconductor and provided on the active layer.

Patent Agency Ranking