公开(公告)号：US5550089A

公开(公告)日：1996-08-27

申请号：US217332

申请日：1994-03-23

申请人： Niloy K. Dutta ,  Russell J. Fischer ,  Neil E. J. Hunt ,  Matthias Passlack ,  Erdmann F. Schubert ,  George J. Zydzik

发明人： Niloy K. Dutta ,  Russell J. Fischer ,  Neil E. J. Hunt ,  Matthias Passlack ,  Erdmann F. Schubert ,  George J. Zydzik

IPC分类号： C23C14/08 ,  H01L29/51 ,  H01L31/04 ,  H01L33/44 ,  H01S5/00 ,  H01S5/028 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/463

CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L33/44 ,  H01S5/028

摘要： An optoelectronic lII-V or II-VI semiconductor device comprises a thin film coating with optical characteristics providing low midgap interface state density. A field effect device for inversion channel applications on III-V semiconductors also comprises a thin dielectric film providing required interface characteristics. The thin film is also applicable to passivation of states on exposed surfaces of electronic III-V devices. The thin film comprises a uniform, homogeneous, dense, stoichiometric gallium oxide (Ga.sub.2 O.sub.3) dielectric thin film, fabricated by electron-beam evaporation of a single crystal, high purity Gd.sub.3 Ga.sub.5 O.sub.12 complex compound on semiconductor substrates kept at temperatures ranging from 40.degree. to 370.degree. C. and at background pressures at or above 1.times.10.sup.-10 Torr.

摘要翻译： 光电子II-V或II-VI半导体器件包括具有提供低中间界面态密度的光学特性的薄膜涂层。 用于III-V半导体上的反向沟道应用的场效应器件还包括提供所需接口特性的薄电介质膜。 薄膜也适用于电子III-V器件暴露表面的状态钝化。 该薄膜包括均匀，均匀，致密的化学计量的氧化镓（Ga 2 O 3）电介质薄膜，其通过在保持在40℃至370℃的温度范围内的半导体衬底上的单晶，高纯度Gd 3 Ga 5 O 12络合物的电子束蒸发 在背景压力为1×10-10乇或以上。

公开(公告)号：US5206871A

公开(公告)日：1993-04-27

申请号：US815311

申请日：1991-12-27

申请人： Dennis G. Deppe ,  Niloy K. Dutta ,  Erdmann F. Schubert ,  Li-Wei Tu ,  George J. Zydzik

发明人： Dennis G. Deppe ,  Niloy K. Dutta ,  Erdmann F. Schubert ,  Li-Wei Tu ,  George J. Zydzik

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/183

CPC分类号： H01S5/18361

摘要： This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF.sub.2,MgF.sub.2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF.sub.2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF.sub.2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.

公开(公告)号：US5212395A

公开(公告)日：1993-05-18

申请号：US844264

申请日：1992-03-02

申请人： Paul R. Berger ,  Alfred Y. Cho ,  Niloy K. Dutta ,  John Lopata ,  Henry M. O'Bryan, Jr. ,  Deborah L. Sivco ,  George J. Zydzik

发明人： Paul R. Berger ,  Alfred Y. Cho ,  Niloy K. Dutta ,  John Lopata ,  Henry M. O'Bryan, Jr. ,  Deborah L. Sivco ,  George J. Zydzik

IPC分类号： H01L31/10 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/105

CPC分类号： H01L31/022466 ,  H01L31/02161 ,  H01L31/105

摘要： This invention pertains to a p-i-n In.sub.0.53 Ga.sub.0.47 As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer from 10 to 40 nm thick and a transparent cadmium tin oxide (CTO) layer from 90 to 600 nm thick. The metal layer makes a non-alloyed ohmic contact to the semiconductor surface, acts as a barrier between the semiconductor and the CTO preventing oxidation of the semiconductor from the O.sub.2 in the plasma during reactive magnetron sputtering of the CTO layer, and prevents formation of a p-n junction between the semiconductor and CTO. The CTO functions as the n or p contact, an optical window and an anti-reflection coating. The top electrode also avoids shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the top electrode is non-alloyed, inter-diffusion into the i-region is not relevant, which avoids an increased dark current.

公开(公告)号：US5208821A

公开(公告)日：1993-05-04

申请号：US825208

申请日：1992-01-24

申请人： Paul R. Berger ,  Niloy K. Dutta ,  William S. Hobson ,  John Lopata

发明人： Paul R. Berger ,  Niloy K. Dutta ,  William S. Hobson ,  John Lopata

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/227

CPC分类号： H01S5/227

摘要： This invention pertains to buried heterostructure lasers which have been fabricated using a single step MOCVD growth of an MQW laser structure over a pattern etched GaAs substrate. The wet chemical etching of grooves having a dovetailed cross-section and being parallel to the [011] direction in GaAs substrates produced reentrant mesas which resulted in isolated laser active regions buried by the AlGaAs cladding layer. The 250 .mu.m long uncoated lasers emit at about 1 .mu.m. Lasers with coated facets have threshold currents of 20 mA and emit >100 mW per facet under room temperature operation. The external differential quantum efficiency for currents of from 30 mA to about 50 mA is found to be nearly independent of temperature in the range of 10.degree. C. to 90.degree. C. suggesting a low temperature dependence of leakage current.

公开(公告)号：US5631490A

公开(公告)日：1997-05-20

申请号：US371247

申请日：1995-01-11

申请人： Niloy K. Dutta ,  Dale C. Jacobson ,  Doyle T. Nichols

发明人： Niloy K. Dutta ,  Dale C. Jacobson ,  Doyle T. Nichols

IPC分类号： H01L31/108 ,  H01L27/14

CPC分类号： H01L31/1085

摘要： MSM-photodetectors are produced using implanted n-type Si and interdigitated electrodes deposited on the implanted surface. The implantation process decreases the carrier lifetime by several orders of magnitude. By implanting silicon with fluorine or oxygen, the bandwidth is increased relatively to unimplanted MSM photodetectors. Exemplary implanted photodetectors exhibited 3-dB bandwidths which were faster by an order of magnitude compared to their unimplanted counterparts. The detectors are thus compatible with multi-gigabit per second operation and monolithic integration with silicon electronics.

摘要翻译： 使用注入的n型Si和沉积在植入表面上的叉指电极产生MSM光电检测器。 注入工艺将载流子寿命降低数个数量级。 通过用氟或氧注入硅，相对于未投影的MSM光电探测器，带宽增加。 示例性的植入光电探测器表现出3-dB带宽，与其未被植入的对应物相比，其速度比一个数量级更快。 因此，检测器与每秒千兆位操作兼容，并与硅电子器件进行单片集成。

公开(公告)号：US5040033A

公开(公告)日：1991-08-13

申请号：US371473

申请日：1989-06-26

申请人： Niloy K. Dutta ,  Thirumala R. Halemane ,  Steven K. Korotky

发明人： Niloy K. Dutta ,  Thirumala R. Halemane ,  Steven K. Korotky

IPC分类号： G01J1/02 ,  G02F1/35 ,  G02F1/355 ,  H01L31/10 ,  H01L33/00 ,  H01S5/026 ,  H01S5/50 ,  H04B10/00

CPC分类号： H01S5/0264 ,  H01S5/50

摘要： Briefly, in the invention a photodetector and an optical amplifier are integrated in the same semiconductor chip. The optical amplifier and the photodetector are positioned side-by-side on the same chip. A portion of the electromagnetic energy carried in the evanescent tail of the optical mode is detected by the photodetector for monitoring the average output power of the optical amplifier. Current confinement and lateral index guiding can be provided by Fe or Ti doped semi-insulating layers of InP. The side-by-side arrangement enables the detector to monitor the output power of the optical amplifier without degrading the output power of the optical amplifier.

公开(公告)号：US4947400A

公开(公告)日：1990-08-07

申请号：US371474

申请日：1989-06-26

申请人： Niloy K. Dutta

发明人： Niloy K. Dutta

IPC分类号： G01J1/02 ,  H01L33/00 ,  H01S3/02 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/227

CPC分类号： H01S5/0264 ,  H01S5/2277

摘要： Briefly, in the invention a photodetector and an injection laser are monolithically integrated on the same semiconductor chip. The laser and photodetector are positioned side-by-side and the laser mirrors can be formed by cleaving. In operation, a portion of the electromagnetic energy carried in the evanescent tail of the optical mode is detected by the photodetector for monitoring the average output power of the laser. Current confinement and lateral index guiding can be provided by Fe or Ti doped semi-insulating layers of InP. The side-by-side arrangement enables the photodetector to monitor the output power of the laser without degrading the output power.

公开(公告)号：US5301201A

公开(公告)日：1994-04-05

申请号：US26364

申请日：1993-03-01

申请人： Niloy K. Dutta ,  Daryoosh Vakhshoori

发明人： Niloy K. Dutta ,  Daryoosh Vakhshoori

IPC分类号： H01S3/10 ,  G02F1/29 ,  H01S3/00 ,  H01S3/106 ,  H01S5/00 ,  H01S5/026 ,  H01S5/062 ,  H01S5/183 ,  H01S3/107 ,  H01S3/101 ,  H01S3/19

CPC分类号： H01S5/18302 ,  G02F1/29 ,  G02F2203/28 ,  H01S5/0614 ,  H01S5/0622 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/1838 ,  H01S5/18388 ,  H01S5/2063

摘要： The disclosed tunable (wavelength and/or focal length) laser typically is a surface emitting laser that comprises a multilayer structure that comprises the lower Bragg reflector and the active region. A layer of electro-optic material (typically liquid crystal material) is in contact with the top surface of the multilayer structure, and means are provided for applying a voltage across the layer of electro-optic material. In one exemplary embodiment, the layer is inside the laser cavity, making the laser wavelength tunable. In another exemplary embodiment the laser is a Z-laser that focuses the output radiation, with the multilayer structure comprising also the upper Bragg reflector. In this embodiment the layer of electro-optic material is outside the laser cavity, and the laser has tunable focal length. A still further embodiment is both wavelength- and focal length-tunable. Lasers according to the invention can be advantageously used in a variety of applications, e.g., in a wavelength division multiplexed and/or optically amplified optical fiber communication system.

摘要翻译： 公开的可调谐（波长和/或焦距）激光器通常是表面发射激光器，其包括包括下布拉格反射器和有源区域的多层结构。 一层电光材料（通常为液晶材料）与多层结构的顶表面接触，并提供用于在电光材料层上施加电压的装置。 在一个示例性实施例中，该层位于激光腔内，使激光波长可调。 在另一示例性实施例中，激光是聚焦输出辐射的Z激光，多层结构还包括上布拉格反射器。 在该实施例中，电光材料层在激光腔外，并且激光器具有可调谐的焦距。 另一个实施例是波长和焦距可调谐的。 根据本发明的激光器可以有利地用于各种应用中，例如在波分复用和/或光放大光纤通信系统中。