Buried heterostructure lasers using MOCVD growth over patterned
substrates
    2.
    发明授权
    Buried heterostructure lasers using MOCVD growth over patterned substrates 失效
    在图案化衬底上使用MOCVD生长的掩埋异质结构激光器

    公开(公告)号:US5208821A

    公开(公告)日:1993-05-04

    申请号:US825208

    申请日:1992-01-24

    IPC分类号: H01S5/00 H01S5/042 H01S5/227

    CPC分类号: H01S5/227

    摘要: This invention pertains to buried heterostructure lasers which have been fabricated using a single step MOCVD growth of an MQW laser structure over a pattern etched GaAs substrate. The wet chemical etching of grooves having a dovetailed cross-section and being parallel to the [011] direction in GaAs substrates produced reentrant mesas which resulted in isolated laser active regions buried by the AlGaAs cladding layer. The 250 .mu.m long uncoated lasers emit at about 1 .mu.m. Lasers with coated facets have threshold currents of 20 mA and emit >100 mW per facet under room temperature operation. The external differential quantum efficiency for currents of from 30 mA to about 50 mA is found to be nearly independent of temperature in the range of 10.degree. C. to 90.degree. C. suggesting a low temperature dependence of leakage current.

    Lateral injection vertical cavity surface-emitting laser
    10.
    发明授权
    Lateral injection vertical cavity surface-emitting laser 有权
    侧向注射垂直腔表面发射激光器

    公开(公告)号:US06493368B1

    公开(公告)日:2002-12-10

    申请号:US09605342

    申请日:2000-06-28

    IPC分类号: H01S500

    摘要: A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure including an apertured high resistivity layer for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion of the lower contact layer that extends under the top electrode has relatively high resistivity. This feature of our invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.

    摘要翻译: 侧向注入VCSEL包括形成空腔谐振器的上镜和下镜,设置在谐振器中的有源区,位于有源区的相对侧上的高导电性上和下接触层,设置在上接触层和下接触层上的上电极和下电极 以及电流引导结构,其包括用于限制电流在相对窄的通道中流动通过有源区域的有孔的高电阻率层,其特征在于,所述下接触层的一部分, 在顶部电极下方具有较高的电阻率。 本发明的这个特征有两个目的。 首先,它抑制平行路径中的电流流动,并且因此倾向于使孔径中的电流密度分布更有利于基模。 二是降低寄生电容。