摘要:
A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.
摘要:
A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.
摘要:
A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.
摘要:
A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.
摘要:
A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
摘要:
A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
摘要:
A semiconductor device capable of achieving downsizing without reducing the power supply efficiency and capable of reducing switching noises and a memory card using the same are disclosed. The device comprises a plurality of stages of voltage booster circuits for potentially raising a power supply voltage up to a final output voltage, a voltage control unit for controlling an output voltage at a nearby location of the final stage, and one or more internal elements to which the final output voltage is supplied. A primary voltage booster circuit at the first stage includes an inductance element, a switching element, a diode and a driver circuit. At a metal core part of the inductance element, a metal wiring line is used, which was formed by use of a fabrication process of semiconductor integrated circuits, while employing for its core part an inter-wiring layer dielectric film that was formed using the fabrication process. In addition, the switching element and the diode are arranged so that portions thereof are disposed beneath the inductance element.
摘要:
A semiconductor device capable of achieving downsizing without reducing the power supply efficiency and capable of reducing switching noises and a memory card using the same are disclosed. The device comprises a plurality of stages of voltage booster circuits for potentially raising a power supply voltage up to a final output voltage, a voltage control unit for controlling an output voltage at a nearby location of the final stage, and one or more internal elements to which the final output voltage is supplied. A primary voltage booster circuit at the first stage includes an inductance element, a switching element, a diode and a driver circuit. At a metal core part of the inductance element, a metal wiring line is used, which was formed by use of a fabrication process of semiconductor integrated circuits, while employing for its core part an inter-wiring layer dielectric film that was formed using the fabrication process. In addition, the switching element and the diode are arranged so that portions thereof are disposed beneath the inductance element.
摘要:
The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要:
The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.