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    SEMICONDUCTOR DEVICE AND POWER SUPPLY USING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND POWER SUPPLY USING THE SAME 有权
    半导体器件和使用该器件的电源

    公开(公告)号：US20080315851A1

    公开(公告)日：2008-12-25

    申请号：US12143305

    申请日：2008-06-20

    申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno

    发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno

    IPC分类号： G05F1/10

    CPC分类号： H02M3/1588 ,  Y02B70/1466

    摘要： A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.

    摘要翻译： 电源控制IC包括在开关电源中，该开关电源驱动以串联连接到直流电源的半导体开关装置，以向外部负载提供预定的恒定电压，并且是包括 控制半导体开关器件的导通和截止的半导体电路。 当流过负载的电流突然增加以在与开关周期同步产生的PWM导通脉冲结束之后导致误差电压超过预定的第一阈值电压时，在同一时间内产生第二PWM导通脉冲 开关周期。 此外，在产生第二PWM导通脉冲的开关周期之后的多个开关周期中，与误差电压进行比较的第一阈值电压被切换到高于第一阈值电压的第二阈值电压。

    Semiconductor device and power supply using the same
    2.
    发明授权
    Semiconductor device and power supply using the same 有权
    半导体器件和电源使用相同

    公开(公告)号：US08120345B2

    公开(公告)日：2012-02-21

    申请号：US12388819

    申请日：2009-02-19

    申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno ,  Takuya Ishigaki

    发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno ,  Takuya Ishigaki

    IPC分类号： G05F1/00

    CPC分类号： H02M3/156 ,  H02M2001/0025

    摘要： A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.

    摘要翻译： 一种应用于恒压电源装置的控制用半导体装置，具备数模转换电路，该数模转换电路以取参考电压源的输出电压作为标准参考电压，输出与第一寄存器的值相对应的基准电压， 并且基于误差放大器的输出电压产生用于驱动功率半导体器件的控制信号，所述误差放大器的差分放大通过对所述恒压电源装置的输出电压进行电阻分压而获得的反馈电压和所述参考电压。 提供了一种模拟数字转换器电路，其将采取恒压电源装置的输出电压的反馈电压转换为数字值作为参考电压，并且基于该输出，第一寄存器的值被校正为 以抵消分压电阻电路的分压比的误差的影响。

    Semiconductor device and power supply using the same
    3.
    发明授权
    Semiconductor device and power supply using the same 有权
    半导体器件和电源使用相同

    公开(公告)号：US08125206B2

    公开(公告)日：2012-02-28

    申请号：US12143305

    申请日：2008-06-20

    申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno

    发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Koji Tateno

    IPC分类号： G05F1/40

    CPC分类号： H02M3/1588 ,  Y02B70/1466

    摘要： A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.

    摘要翻译： 电源控制IC包括在开关电源中，该开关电源驱动以串联连接到直流电源的半导体开关装置，以向外部负载提供预定的恒定电压，并且是包括 控制半导体开关器件的导通和截止的半导体电路。 当流过负载的电流突然增加以在与开关周期同步产生的PWM导通脉冲结束之后导致误差电压超过预定的第一阈值电压时，在同一时间内产生第二PWM导通脉冲 开关周期。 此外，在产生第二PWM导通脉冲的开关周期之后的多个开关周期中，与误差电压进行比较的第一阈值电压被切换到高于第一阈值电压的第二阈值电压。

    Semiconductor device, method of manufacturing the same and power-supply device using the same
    6.
    发明授权
    Semiconductor device, method of manufacturing the same and power-supply device using the same 失效
    半导体装置及其制造方法以及使用其的电源装置

    公开(公告)号：US08664716B2

    公开(公告)日：2014-03-04

    申请号：US12818485

    申请日：2010-06-18

    申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

    发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

    IPC分类号： H01L27/06

    CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/4933 ,  H01L29/66727 ,  H01L29/7803 ,  H02M3/1588 ,  Y02B70/1466

    摘要： In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n− type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n− type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n− type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.

    摘要翻译： 在横向型功率MOSFET中，通过抑制增加电池间距而实现高的击穿电压，并且降低反馈容量和导通电阻。 相对于n +型硅衬底的主表面垂直地设置具有高电阻的n型硅区域作为保持击穿电压的区域，并且具有高电阻的n型硅区域连接到 n +型硅衬底。 此外，导电物质通过绝缘物质填充在形成为从n +型硅衬底的主表面到达n +型硅衬底的沟槽内，以便与具有高电阻的n型硅区接触，并且 导电物质电连接到源电极。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20100001790A1

    公开(公告)日：2010-01-07

    申请号：US12483668

    申请日：2009-06-12

    申请人： Takayuki HASHIMOTO ,  Takashi Hirao ,  Noboru Akiyama

    发明人： Takayuki HASHIMOTO ,  Takashi Hirao ,  Noboru Akiyama

    IPC分类号： H01L25/00

    CPC分类号： H01L27/0629 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

    摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.

    摘要翻译： 在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域， 低端开关。 通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径 通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感 可以降低转换效率。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
    半导体器件及其制造方法

    公开(公告)号：US20090140327A1

    公开(公告)日：2009-06-04

    申请号：US12326392

    申请日：2008-12-02

    申请人： Takashi Hirao ,  Takayuki Hashimoto ,  Noboru Akiyama

    发明人： Takashi Hirao ,  Takayuki Hashimoto ,  Noboru Akiyama

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813

    摘要： The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.

    摘要翻译： 垂直沟槽MOSFET包括：形成在其下表面上具有漏电极的N +型衬底的上表面上的N型外延区域; 栅极沟槽，其从前表面延伸到N型外延区域; 位于所述栅极沟槽中以便插入绝缘体的栅电极; 形成在N型外延区上的沟道区; 形成在沟道区上的源极区; 形成在源极区上的源电极; 源极沟槽，其从前表面延伸到N型外延区域; 以及位于所述源极沟槽中以便插入绝缘体的沟槽埋入式源电极，其中所述源电极与所述沟槽埋入式源极接触。

    Semiconductor device, LED driving circuit, and apparatus for displaying an image
    9.
    发明授权
    Semiconductor device, LED driving circuit, and apparatus for displaying an image 失效
    半导体装置，LED驱动电路以及显示图像的装置

    公开(公告)号：US08258711B2

    公开(公告)日：2012-09-04

    申请号：US12779343

    申请日：2010-05-13

    申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

    发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

    IPC分类号： H05B37/02

    CPC分类号： H01L29/7813 ,  G09G3/342 ,  G09G2320/064 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7815 ,  H05B33/0818 ,  H05B33/0827 ,  H05B33/089 ,  Y02B20/347

    摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

    摘要翻译： 半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成， 在每个串中流动的电流（恒流驱动）。 使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。 作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。 在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08203380B2

    公开(公告)日：2012-06-19

    申请号：US12483668

    申请日：2009-06-12

    申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

    发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

    IPC分类号： H01L25/00

    CPC分类号： H01L27/0629 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

    摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.

    摘要翻译： 在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域， 低端开关。 通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径 通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感 可以降低转换效率。