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    Electron microscope
    1.
    发明授权
    Electron microscope 有权
    电子显微镜

    公开(公告)号：US08841615B2

    公开(公告)日：2014-09-23

    申请号：US13637227

    申请日：2011-02-22

    申请人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    发明人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    IPC分类号： H01J37/26 ,  H01J37/073

    CPC分类号： H01J37/26 ,  H01J37/073 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557

    摘要： An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

    摘要翻译： 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。

    ELECTRON MICROSCOPE
    2.
    发明申请
    ELECTRON MICROSCOPE 有权
    电子显微镜

    公开(公告)号：US20130009058A1

    公开(公告)日：2013-01-10

    申请号：US13637227

    申请日：2011-02-22

    申请人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    发明人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    IPC分类号： H01J37/06 ,  H01J37/26

    CPC分类号： H01J37/26 ,  H01J37/073 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557

    摘要： An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

    摘要翻译： 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。

    Vertical-type semiconductor device having repetitive-pattern layer
    3.
    发明授权
    Vertical-type semiconductor device having repetitive-pattern layer 失效
    具有重复图案层的垂直型半导体器件

    公开(公告)号：US07342265B2

    公开(公告)日：2008-03-11

    申请号：US11012116

    申请日：2004-12-16

    申请人： Makoto Kuwahara ,  Yoshiyuki Hattori ,  Shoichi Yamauchi ,  Mikimasa Suzuki

    发明人： Makoto Kuwahara ,  Yoshiyuki Hattori ,  Shoichi Yamauchi ,  Mikimasa Suzuki

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7813 ,  G06F17/5068 ,  H01L29/0634

    摘要： A semiconductor device is fabricated to include a withstand-voltage assurance layer designed into a multi-dimensional super junction structure and a group of trench gate electrodes, each of which penetrating a body layer in contact with the multi-dimensional super junction structure to reach the multi-dimensional super junction structure, so that dispersions of an on-resistance of the semiconductor device can be reduced. When a position at which the group of trench gate electrodes is created is shifted in one direction, the size of an overlap area common to the group of trench gate electrodes and an n-type column changes. However, the group of trench gate electrodes is oriented in such a way that the changes in overlap-area size are minimized.

    摘要翻译： 半导体器件被制造成包括设计成多维超结结构的耐压保证层和一组沟槽栅极电极，每个沟槽栅电极穿透与多维超结结构接触的体层以达到 多维超结结构，能够降低半导体装置的导通电阻的分散。 当形成沟槽栅电极组的位置在一个方向上移动时，沟槽栅电极组和n型列共同的重叠区域的尺寸改变。 然而，沟槽栅电极组被定向成使得重叠区域尺寸的变化最小化。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09478621B2

    公开(公告)日：2016-10-25

    申请号：US14238915

    申请日：2012-09-04

    申请人： Nozomu Akagi ,  Yuma Kagata ,  Makoto Kuwahara

    发明人： Nozomu Akagi ,  Yuma Kagata ,  Makoto Kuwahara

    IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/405 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7813

    摘要： The element electrodes of a semiconductor element are disposed in a cell region, while an outermost peripheral electrode electrically connected to a semiconductor substrate is disposed in a peripheral region. In the peripheral region, a second-conductivity-type layer is disposed above a super-junction structure. A potential division region is disposed above the second-conductivity-type layer to electrically connect the element electrodes and the outermost peripheral electrode and also divide the voltage between the element electrodes and the outermost peripheral electrode into a plurality of stages. A part of the potential division region overlaps the peripheral region when viewed from the thickness direction of the semiconductor substrate.

    摘要翻译： 半导体元件的元件电极设置在单元区域中，而与半导体基板电连接的最外周电极设置在周边区域中。 在外围区域中，在超结结构上方设置第二导电型层。 电位分割区域设置在第二导电型层之上，以电连接元件电极和最外周电极，并且还将元件电极和最外周电极之间的电压分成多个级。 当从半导体衬底的厚度方向观察时，电势分割区域的一部分与周边区域重叠。

    Semiconductor device having super junction structure and method for manufacturing the same
    9.
    发明申请
    Semiconductor device having super junction structure and method for manufacturing the same 有权
    具有超结结构的半导体器件及其制造方法

    公开(公告)号：US20070013412A1

    公开(公告)日：2007-01-18

    申请号：US11472547

    申请日：2006-06-22

    申请人： Shoichi Yamauchi ,  Tomoatsu Makino ,  Makoto Kuwahara ,  Yoshiyuki Hattori

    发明人： Shoichi Yamauchi ,  Tomoatsu Makino ,  Makoto Kuwahara ,  Yoshiyuki Hattori

    IPC分类号： H03K19/091

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.

    摘要翻译： 半导体器件包括：单元区域; 终端区域 下半导体层; 包括超级结结构的下半导体层上的中间半导体层; 中间半导体层上的端子上半导体层; 在所述端子上半导体层的与所述单元区域相邻的表面部分上的端子接触半导体区域; 端子上半导体层上的绝缘层具有邻近具有小厚度的单元区域的第一部分和与厚度较大的第一部分相邻的第二部分; 以及在所述单元区域和所述端子区域的一部分中的导电层，所述导电层从所述单元区域延伸到所述绝缘层的所述第一部分之外的所述端子区域的所述部分。

    Injector/ejector system for a plug-in module and apparatus using the systems
    10.
    发明授权
    Injector/ejector system for a plug-in module and apparatus using the systems 失效
    用于插入式模块的注射器/喷射器系统和使用该系统的装置

    公开(公告)号：US5283713A

    公开(公告)日：1994-02-01

    申请号：US944878

    申请日：1992-09-14

    申请人： Toshiaki Nagafuji ,  Makoto Kuwahara ,  Kenichi Hatakeyama ,  Yuji Sato

    发明人： Toshiaki Nagafuji ,  Makoto Kuwahara ,  Kenichi Hatakeyama ,  Yuji Sato

    IPC分类号： H01R13/629 ,  H05K7/14 ,  H05K5/02 ,  B25G3/18 ,  H01R13/62

    CPC分类号： H05K7/1409 ,  H01R13/629 ,  Y10T403/604

    摘要： The grip of a plug-in module according to the present invention is rotatably supported on the upper side of a circuit board. A first end portion of the grip includes a convex portion which engages with a recessed portion in the housing to prevent the plug-in module from being dislodged from the housing by vibrations or the like. When the first and second engaging end are disengaged and the grip is rotated, a protruding end on one side of the grip abuts and applies pressure to the upper end of the housing to assist in removing the plug-in module from the housing. In addition, the above-described protruding end and an additional protruding end on the other side of the grip may be grasped by a robot to allow insertion or removal of the plug-in module by a robot.

    摘要翻译： 根据本发明的插入式模块的把手可旋转地支撑在电路板的上侧。 手柄的第一端部包括与壳体中的凹部接合的凸部，以防止插入式模块通过振动等从壳体移出。 当第一和第二接合端脱离并且把手被旋转时，把手的一侧上的突出端邻接并向壳体的上端施加压力，以帮助将插件模块从壳体移除。 此外，上述突出端和在手柄的另一侧上的另外的突出端可以由机器人掌握，以允许机器人插入或移除插件模块。