公开(公告)号：US20120215968A1

公开(公告)日：2012-08-23

申请号：US13401033

申请日：2012-02-21

申请人： Nobuya Uematsu ,  Tsuneo Yamamoto

发明人： Nobuya Uematsu ,  Tsuneo Yamamoto

IPC分类号： G06F12/02

CPC分类号： G11C16/16 ,  G06F12/0246 ,  G06F2212/7205 ,  G11C16/3445 ,  G11C29/82

摘要： To record data in a flash memory, upon detecting that a current destination memory block is full, a control apparatus records data in a destination memory block one block by one block, with “in-advance” data erasure of the next memory block and by determining if data erasure of the next memory block is successful. When data erasure of the next memory block fails, such memory block is designated as broken, and such memory block is excluded from a group of blocks to be used as recording destination. After determining the data erasure result of a yet-next memory block is successful, the required data is copied to the yet-next memory block. Therefore, even when one of the blocks is broken, a sequential data recording in the flash memory is performed without increasing the number of data copy operations between blocks.

摘要翻译： 为了将数据记录在闪速存储器中，在检测到当前目的地存储器块已满时，控制装置以一个块为单位将目的地存储块中的数据以下一个存储器块的“提前”数据擦除，并通过 确定下一个存储块的数据擦除是否成功。 当下一个存储器块的数据擦除失败时，这种存储器块被指定为损坏，并且这样的存储器块被从用作记录目的地的一组块中排除。 在确定下一个存储器块的数据擦除结果成功之后，所需数据被复制到下一个存储块。 因此，即使当其中一个块被破坏时，在不增加块之间的数据复制操作的次数的情况下执行闪速存储器中的顺序数据记录。

公开(公告)号：US09058883B2

公开(公告)日：2015-06-16

申请号：US13401033

申请日：2012-02-21

申请人： Nobuya Uematsu ,  Tsuneo Yamamoto

发明人： Nobuya Uematsu ,  Tsuneo Yamamoto

IPC分类号： G11C29/00 ,  G11C16/34 ,  G11C16/16 ,  G06F12/02

CPC分类号： G11C16/16 ,  G06F12/0246 ,  G06F2212/7205 ,  G11C16/3445 ,  G11C29/82

摘要： To record data in a flash memory, upon detecting that a current destination memory block is full, a control apparatus records data in a destination memory block one block by one block, with “in-advance” data erasure of the next memory block and by determining if data erasure of the next memory block is successful. When data erasure of the next memory block fails, such memory block is designated as broken, and such memory block is excluded from a group of blocks to be used as recording destination. After determining the data erasure result of a yet-next memory block is successful, the required data is copied to the yet-next memory block. Therefore, even when one of the blocks is broken, a sequential data recording in the flash memory is performed without increasing the number of data copy operations between blocks.

摘要翻译： 为了将数据记录在闪速存储器中，在检测到当前目的地存储器块已满时，控制装置以一个块为单位将目的地存储块中的数据以下一个存储器块的“提前”数据擦除，并通过 确定下一个存储块的数据擦除是否成功。 当下一个存储器块的数据擦除失败时，这种存储器块被指定为损坏，并且这样的存储器块被从用作记录目的地的一组块中排除。 在确定下一个存储器块的数据擦除结果成功之后，所需数据被复制到下一个存储块。 因此，即使当其中一个块被破坏时，在不增加块之间的数据复制操作的次数的情况下执行闪速存储器中的顺序数据记录。

公开(公告)号：US08968972B2

公开(公告)日：2015-03-03

申请号：US13883850

申请日：2011-11-18

申请人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

发明人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

IPC分类号： G03F1/50 ,  C22C27/06 ,  G03F1/54 ,  G03F1/80 ,  C23C14/06 ,  G03F1/30

CPC分类号： G03F1/80 ,  B32B15/01 ,  C22C27/06 ,  C23C14/0641 ,  C23C14/0676 ,  G03F1/00 ,  G03F1/30 ,  G03F1/50 ,  G03F1/54

摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

摘要翻译： 在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。 使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持 与常规含铬材料膜相同的光学特性等，从而提高图案形成精度。

公开(公告)号：US5290869A

公开(公告)日：1994-03-01

申请号：US991283

申请日：1992-12-16

申请人： Mitsuo Kinoshita ,  Yoshimasa Miura ,  Tsuneo Yamamoto

发明人： Mitsuo Kinoshita ,  Yoshimasa Miura ,  Tsuneo Yamamoto

IPC分类号： C04B24/16 ,  C04B24/26 ,  C04B103/40 ,  C08F265/00 ,  C08F265/04 ,  C08F265/06 ,  C08F265/10 ,  C04B16/04

CPC分类号： C04B24/2688 ,  C04B24/16 ,  C08F265/04 ,  C04B2103/408

摘要： Cement dispersion agents containing a graft copolymer composed of four kinds of constituent unit each having a specified structure can provide improved fluidity to cementing compositions, prevent slump loss after the kneading process and reduce the drying shrinkage of hardened concrete produced at the same time.

摘要翻译： 含有由具有特定结构的四种结构单元组成的接枝共聚物的水泥分散剂可以提供改进的粘合剂组合物的流动性，防止混炼后的坍落度损失并降低同时生产的硬化混凝土的干燥收缩率。

公开(公告)号：US06228541B1

公开(公告)日：2001-05-08

申请号：US09292936

申请日：1999-04-16

申请人： Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi ,  Nobuyuki Yoshioka

发明人： Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi ,  Nobuyuki Yoshioka

IPC分类号： G03F900

CPC分类号： C23C14/0057 ,  C23C14/0676 ,  C23C14/50 ,  G03F1/32

摘要： A uniform thin phase-shifting photomask blank can be formed by depositing a thin film on a substrate by a reactive sputtering technique while passing, at least four times, the substrate over a sputtering target. In the formation of the blank, NO gas is used as the reactive gas, a target composed of a mixture of molybdenum and silicon is used as the sputtering target and a transparent substrate is used as the thin film-forming substrate to form, on the transparent substrate, a light-transmitting film capable of transmitting light rays having an intensity, which cannot substantially contribute to the exposure. In addition, the film is formed, on the substrate, through an opening having a sufficiently enlarged length along the substrate-conveying direction so that even regions whose deposition rate of the target component is not more than 90% of the maximum level thereof also contribute to the film-formation. The phase-shifting photomask blank thus prepared is subjected to a patterning treatment to form a phase-shifting photomask.

摘要翻译： 可以通过反应溅射技术在衬底上沉积薄膜，同时在溅射靶上通过至少四次衬底来形成均匀的薄移相光掩模坯料。 在坯料的形成中，使用NO气体作为反应气体，使用由钼和硅的混合物构成的靶作为溅射靶，并且使用透明衬底作为薄膜形成衬底，以形成 透明基板，能够透射具有强度的光线的透光膜，其不能显着地有助于曝光。 此外，膜在基板上通过沿基板输送方向具有足够长的长度的开口形成，使得目标成分的沉积速率不大于其最大值的90％的均匀区域也有贡献 到电影形成。 将如此制备的相移光掩模坯料进行图案化处理以形成相移光掩模。

公开(公告)号：US4808468A

公开(公告)日：1989-02-28

申请号：US88326

申请日：1987-08-21

申请人： Hitoshi Nojiri ,  Katuhiro Kitai ,  Yoshihide Ohnari ,  Masaro Kidoh ,  Tsuneo Yamamoto

发明人： Hitoshi Nojiri ,  Katuhiro Kitai ,  Yoshihide Ohnari ,  Masaro Kidoh ,  Tsuneo Yamamoto

IPC分类号： B29C59/10 ,  B29C59/14 ,  B29C71/02 ,  B29D7/01 ,  C08J5/18 ,  H05K1/03 ,  H05K3/38 ,  B32B7/00

CPC分类号： C08J7/123 ,  B29D7/01 ,  C08J5/18 ,  B29C59/10 ,  B29C59/14 ,  B29C71/02 ,  B29K2079/00 ,  C08J2379/08 ,  H05K1/0346 ,  H05K3/381 ,  Y10T428/31721

摘要： The present invention provides a polyimide film whose residual content of volatiles is reduced to not more than 0.45 weight % on the basis of the film, and further a polyimide film whose residual content of volatiles is reduced to not more than 0.45 weight % on the basis of the film and whose oxygen/carbon ratio in the surface layer is increased by 0.01-0.1, and manufacturing methods therefor.According to the present invention, it is possible to provide a polyimide film improved in adhesion performance in a stable and homogeneous manner, and this improvement of adhesion performance is attainable in the film-forming process, not in a separate process of after-treatment.

摘要翻译： 本发明提供一种聚酰亚胺膜，其基于该薄膜将挥发物的残留含量降低至不超过0.45重量％，进一步将基于挥发物的残留含量降低至不超过0.45重量％的聚酰亚胺膜 的膜，其表面层中的氧/碳比率增加了0.01-0.1，及其制造方法。 根据本发明，可以以稳定均匀的方式提供改进的粘合性能的聚酰亚胺膜，并且在成膜过程中可以获得粘合性能的改善，而不是在分开的后处理方法中。

公开(公告)号：US4755424A

公开(公告)日：1988-07-05

申请号：US5050

申请日：1987-01-20

申请人： Yoshiki Takeoka ,  Hideki Kawai ,  Tsuneo Yamamoto

发明人： Yoshiki Takeoka ,  Hideki Kawai ,  Tsuneo Yamamoto

IPC分类号： C08J5/12 ,  B29C59/10 ,  B29C70/64 ,  C08J5/18 ,  C08J7/00 ,  C08K3/22 ,  C08K3/32 ,  C08K3/36 ,  H05K1/03 ,  H05K3/38 ,  B32B5/16 ,  B32B15/08 ,  B32B27/06

CPC分类号： H05K1/0373 ,  B29C59/10 ,  B29C70/64 ,  C08K3/22 ,  C08K3/32 ,  C08K3/36 ,  B29K2079/00 ,  H05K1/0346 ,  H05K2201/0154 ,  H05K2201/0209 ,  H05K2203/097 ,  H05K3/381 ,  Y10S428/901 ,  Y10T428/25 ,  Y10T428/258 ,  Y10T428/31681 ,  Y10T428/31721

摘要： A polyimide film produced by forming a film from a raw material incorporated with a finely divided inorganic powder that forms minute projections on the film surface and subsequently subjecting the film to corona discharge treatment. According to this invention, it is possible to obtain a heat-resistant polyimide film having improved adhesive properties and uniform bond strength. The film does not cause blocking when wound into a roll.

摘要翻译： 通过从包含在薄膜表面上形成微小突起的细碎无机粉末的原料形成膜并随后对膜进行电晕放电处理而制造的聚酰亚胺膜。 根据本发明，可以获得具有改进的粘合性能和均匀粘合强度的耐热聚酰亚胺膜。 当卷成卷时，胶片不会引起堵塞。

公开(公告)号：US08709686B2

公开(公告)日：2014-04-29

申请号：US13883850

申请日：2011-11-18

申请人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

发明人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

IPC分类号： G03F1/50

摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

公开(公告)号：US20130230796A1

公开(公告)日：2013-09-05

申请号：US13883850

申请日：2011-11-18

申请人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

发明人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

IPC分类号： G03F1/50

CPC分类号： G03F1/80 ,  B32B15/01 ,  C22C27/06 ,  C23C14/0641 ,  C23C14/0676 ,  G03F1/00 ,  G03F1/30 ,  G03F1/50 ,  G03F1/54

摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

公开(公告)号：US06689515B2

公开(公告)日：2004-02-10

申请号：US09805902

申请日：2001-03-15

申请人： Nobuyuki Yoshioka ,  Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi

发明人： Nobuyuki Yoshioka ,  Akihiko Isao ,  Susumu Kawada ,  Tsuneo Yamamoto ,  Jun Amano ,  Ryoichi Kobayashi

IPC分类号： G03F900

CPC分类号： C23C14/0057 ,  C23C14/0676 ,  C23C14/50 ,  G03F1/32

摘要： A uniform thin phase-shifting photomask blank can be formed by depositing a thin film on a substrate by a reactive sputtering technique while passing, at least four times, the substrate over a sputtering target. In the formation of the blank, NO gas is used as the reactive gas, a target composed of a mixture of molybdenum and silicon is used as the sputtering target and a transparent substrate is used as the thin film-forming substrate to form, on the transparent substrate, a light-transmitting film capable of transmitting light rays having an intensity, which cannot substantially contribute to the exposure. In addition, the film is formed, on the substrate, through an opening having a sufficiently enlarged length along the substrate-conveying direction so that even regions whose deposition rate of the target component is not more than 90% of the maximum level thereof also contribute to the film-formation. The phase-shifting photomask blank thus prepared is subjected to a patterning treatment to form a phase-shifting photomask.

摘要翻译： 可以通过反应溅射技术在衬底上沉积薄膜，同时在溅射靶上通过至少四次衬底来形成均匀的薄移相光掩模坯料。 在坯料的形成中，使用NO气体作为反应气体，使用由钼和硅的混合物构成的靶作为溅射靶，并且使用透明衬底作为薄膜形成衬底，以形成 透明基板，能够透射具有强度的光线的透光膜，其不能显着地有助于曝光。 此外，膜在基板上通过沿着基板输送方向具有足够长的长度的开口形成，使得目标成分的成膜速度不超过其最大值的90％的均匀区域也有贡献 到电影形成。 将如此制备的相移光掩模坯料进行图案化处理以形成相移光掩模。