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公开(公告)号：US20130306465A1
公开(公告)日：2013-11-21
申请号：US13474533
申请日：2012-05-17
申请人： Nolan L. Zimmerman , George Mattinger , Gregory J. Wilson , Eric A. Englhardt , Balamurugan Ramasamy
发明人： Nolan L. Zimmerman , George Mattinger , Gregory J. Wilson , Eric A. Englhardt , Balamurugan Ramasamy
IPC分类号： C25D17/00
CPC分类号： C25D17/004 , C25D17/001 , C25D17/002 , F16J15/00 , F16J15/025 , F16J15/16 , F16J15/3204 , F16J15/3236
摘要： A seal ring for an electrochemical processor does not slip or deflect laterally when pressed against a wafer surface. The seal ring may be on a rotor of the processor, with the seal ring having an outer wall joined to a tip arc through an end. The outer wall may be a straight wall. A relatively rigid support ring may be attached to the seal ring, to provide a more precise sealing dimension. Knife edge seal rings that slip or deflect laterally on the wafer surface may also be used. In these designs, the slipping is substantially uniform and consistent, resulting in improved performance.
摘要翻译： 用于电化学处理器的密封环在压在晶片表面上时不会横向滑动或偏转。 密封环可以在处理器的转子上，密封环具有通过端部连接到尖端弧的外壁。 外壁可以是直壁。 相对刚性的支撑环可以附接到密封环，以提供更精确的密封尺寸。 也可以使用在晶片表面上横向滑动或偏转的刀边缘密封环。 在这些设计中，滑动基本均匀且一致，从而提高了性能。
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公开(公告)号：US20120109093A1
公开(公告)日：2012-05-03
申请号：US12913951
申请日：2010-10-28
申请人： Gregory J. Wilson , Rong Deng , Steve J. Waas
发明人： Gregory J. Wilson , Rong Deng , Steve J. Waas
IPC分类号： A61F13/60
CPC分类号： A61F13/5611 , A61F13/15731 , A61F13/15756 , A61F13/4704 , A61F13/4756 , A61F13/533 , A61F13/60
摘要： An embossed article having one or more adhesive patterns serving to operatively attach a release paper.
摘要翻译： 具有一个或多个粘合剂图案的压花制品，用于可操作地附着剥离纸。
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公开(公告)号：US20120052204A1
公开(公告)日：2012-03-01
申请号：US12873002
申请日：2010-08-31
申请人： Bryan Puch , Kyle M. Hanson , Marvin Bernt , Paul R. McHugh , Gregory J. Wilson
发明人： Bryan Puch , Kyle M. Hanson , Marvin Bernt , Paul R. McHugh , Gregory J. Wilson
IPC分类号： C23C16/56
CPC分类号： H01L21/6719 , H01L21/67057 , H01L21/67126
摘要： In a workpiece processor, a head is moveable onto a bowl to form a process chamber. A workpiece can be cleaned in the processor by immersing the workpiece into a liquid bath in the bowl and then boiling the liquid. Vacuum may be applied to the chamber to reduce the pressure within the chamber, thereby reducing the boiling temperature of the liquid and allowing processing at lower temperatures. In a separate method for prewetting a workpiece, a humid gas is provided into the process chamber and condenses on the workpiece. In another separate method for wetting a workpiece, liquid water is provided into the bowl, with the workpiece above the liquid water. Water vapor is created in the process chamber by applying vacuum to the process chamber. The vapor wets the workpiece. The workpiece is then further wetted by submerging the workpiece into the liquid water.
摘要翻译： 在工件处理器中，头可移动到碗上以形成处理室。 工件可以通过将工件浸入碗中的液体浴中，然后煮沸液体而在处理器中进行清洁。 真空可以施加到室以减小室内的压力，从而降低液体的沸腾温度并允许在较低温度下进行加工。 在用于预润湿工件的单独方法中，将湿气提供到处理室中并在工件上冷凝。 在用于润湿工件的另一种分开的方法中，液体水被提供到碗中，工件在液态水上方。 通过对处理室施加真空，在处理室中产生水蒸汽。 蒸汽润湿工件。 然后通过将工件浸入液体水中来进一步润湿工件。
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4.发明申请公开(公告)号：US20110042224A1
公开(公告)日：2011-02-24
申请号：US12917997
申请日：2010-11-02
CPC分类号： C25D7/12 , C25D7/123 , C25D17/001 , C25D17/10 , C25F3/30
摘要： Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle. The supplementary virtual electrode is located in the processing zone, and it is configured to counteract an electric field offset relative to the wafer associated with an offset between the wafer and the counter electrode in the vessel when the wafer is in the processing zone.
摘要翻译： 用于电化学处理微片的装置和方法。 该装置可以具有容器，该容器包括处理区域，微处理区域定位用于电化学处理。 该装置还包括容器中的至少一个对电极，其可以根据具体的电镀或电解抛光应用而作为阳极或阴极操作。 该装置还包括辅助电极和辅助虚拟电极。 辅助电极被配置为独立于容器中的对电极操作，并且其可以是根据工艺类型的小电极和/或去镀电极。 在电镀循环或抛光循环的一部分期间，辅助电极可以进一步用作另一个对电极。 辅助虚拟电极位于处理区域中，并且其被配置为当晶片处于处理区域时，相对于与晶片和对置电极之间的偏移相关联的晶片抵消相对于晶片的电场偏移。
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5.发明授权公开(公告)号：US07842173B2
公开(公告)日：2010-11-30
申请号：US11699768
申请日：2007-01-29
IPC分类号： C25B9/00
CPC分类号： C25D7/12 , C25D7/123 , C25D17/001 , C25D17/10 , C25F3/30
摘要： Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle. The supplementary virtual electrode is located in the processing zone, and it is configured to counteract an electric field offset relative to the wafer associated with an offset between the wafer and the counter electrode in the vessel when the wafer is in the processing zone.
摘要翻译： 用于电化学处理微片的装置和方法。 该装置可以具有容器，该容器包括处理区域，微处理区域定位用于电化学处理。 该装置还包括容器中的至少一个对电极，其可以根据具体的电镀或电解抛光应用而作为阳极或阴极操作。 该装置还包括辅助电极和辅助虚拟电极。 辅助电极被配置为独立于容器中的对电极操作，并且其可以是根据工艺类型的小电极和/或去镀电极。 在电镀循环或抛光循环的一部分期间，辅助电极可以进一步用作另一个对电极。 辅助虚拟电极位于处理区域中，并且其被配置为当晶片处于处理区域时，相对于与晶片和对置电极之间的偏移相关联的晶片抵消相对于晶片的电场偏移。
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公开(公告)号：US07566386B2
公开(公告)日：2009-07-28
申请号：US10975154
申请日：2004-10-28
CPC分类号： C25D17/02 , C25D5/08 , C25D17/001 , Y10S204/07
摘要： A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.
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7.发明授权Integrated microfeature workpiece processing tools with registration systems for paddle reactors 有权集成的微型工件加工工具，具有桨式反应堆的配准系统公开(公告)号：US07393439B2
公开(公告)日：2008-07-01
申请号：US10733807
申请日：2003-12-11
CPC分类号： C25D17/001 , C25D17/02 , C25D21/10
摘要： Tools having mounting modules with registration systems are disclosed. The mounting module includes positioning elements for precisely locating a processing chamber and a transport system that moves workpieces to and from the processing chamber. The relative positions between positioning elements of the module are fixed so that the transport system does not need to be recalibrated when the processing chamber is removed and replaced with another processing chamber. The processing chamber includes a paddle device for agitating processing liquid at a process surface of the workpiece. The paddle device, the processing chamber, and electrodes within the processing chamber are configured to reduce the likelihood for electrical shadowing created by the paddles at the surface of the workpiece, and to account for three-dimensional effects on the electrical field as the paddles reciprocate relative to the workpiece.
摘要翻译： 公开了具有配准系统的安装模块的工具。 安装模块包括用于精确定位处理室的定位元件和将工件移至和离开处理室的输送系统。 模块的定位元件之间的相对位置是固定的，使得当处理室被移除并被另一处理室更换时，输送系统不需要重新校准。 处理室包括用于在工件的处理表面处搅拌处理液体的桨装置。 处理室中的桨装置，处理室和电极被配置为减少由工件表面上的桨形成的电阴影的可能性，并且当桨叶往复运动时考虑对电场的三维效应 相对于工件。
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公开(公告)号：US07371998B2
公开(公告)日：2008-05-13
申请号：US11428742
申请日：2006-07-05
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/6719
摘要： A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.
摘要翻译： 热处理器可以包括可在处理容器或罐内的处理室周围定位的冷却套。 加热器可以进入基本上处理室容器和冷却套之间的位置。 提供具有多个工件保持位置的保持器，用于保持批次或工件或晶片。 处理室容器可移动到其基本上包围保持器的位置，使得保持器中的晶片可以在受控环境中进行处理。 可以提供冷却罩以在热处理之前或之后从加热器吸收热量。 热处理器是紧凑的和热屏蔽的，并且可以用于具有其他类型的处理器的自动处理系统中。
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9.发明授权Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 有权在半导体工件上电化学沉积金属的装置和方法公开(公告)号：US07115196B2
公开(公告)日：2006-10-03
申请号：US10377397
申请日：2003-02-27
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译： 用于对诸如半导体工件的工件进行金属化的工艺。 在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层 作为PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。
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10.发明授权Apparatus and method for processing a microelectronic workpiece using metrology 有权使用计量处理微电子工件的装置和方法公开(公告)号：US06747734B1
公开(公告)日：2004-06-08
申请号：US09612176
申请日：2000-07-08
IPC分类号： G01N2188
CPC分类号： H01L21/67173 , H01L21/67103 , H01L21/67207 , H01L21/67219 , H01L21/67253 , H01L21/67276
摘要： A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.
摘要翻译： 用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。 该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。 布置用于对工件进行连续加工的种子层沉积工具，工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。 每个工具都可以设置一个测量单元来测量工件参数。 每个计量单元可用作每个工具的前馈控制和/或反馈控制。
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