公开(公告)号：US20110233779A1

公开(公告)日：2011-09-29

申请号：US13052367

申请日：2011-03-21

申请人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

发明人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

IPC分类号： H01L23/532 ,  H01L21/28 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y10/00 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.

摘要翻译： 根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜 作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳 埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。

公开(公告)号：US20110057322A1

公开(公告)日：2011-03-10

申请号：US12876669

申请日：2010-09-07

申请人： Noriaki MATSUNAGA ,  Makoto Wada ,  Yosuke Akimoto ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Yuichi Yamazaki

发明人： Noriaki MATSUNAGA ,  Makoto Wada ,  Yosuke Akimoto ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Yuichi Yamazaki

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2224/13

摘要： According to one embodiment, a carbon nanotube interconnect includes a first interconnection layer, an interlayer dielectric film, a second interconnection layer, a contact hole, a plurality of carbon nanotubes and a film. The interlayer dielectric film is formed on the first interconnection layer. The second interconnection layer is formed on the interlayer dielectric film. The contact hole is formed in the interlayer dielectric film between the first interconnection layer and the second interconnection layer. The carbon nanotubes are formed in the contact hole. The carbon nanotubes have a first end connected to the first interconnection layer and a second end connected to the second interconnection layer. The film is formed between the interlayer dielectric film and the second interconnection layer. The film has a portion filled between the second ends of the carbon nanotubes.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一互连层，层间电介质膜，第二互连层，接触孔，多个碳纳米管和膜。 层间绝缘膜形成在第一互连层上。 第二互连层形成在层间绝缘膜上。 接触孔形成在第一互连层和第二互连层之间的层间绝缘膜中。 碳纳米管形成在接触孔中。 碳纳米管具有连接到第一互连层的第一端和连接到第二互连层的第二端。 该膜形成在层间绝缘膜和第二互连层之间。 该膜具有填充在碳纳米管的第二端之间的部分。

公开(公告)号：US08710672B2

公开(公告)日：2014-04-29

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US20120228614A1

公开(公告)日：2012-09-13

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20130075929A1

公开(公告)日：2013-03-28

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768 ,  H01L23/522 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US08648464B2

公开(公告)日：2014-02-11

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L23/48

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20120052680A1

公开(公告)日：2012-03-01

申请号：US13041543

申请日：2011-03-07

申请人： Naoshi SAKUMA ,  Tadashi Sakai ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Mariko Suzuki ,  Makoto Wada

发明人： Naoshi SAKUMA ,  Tadashi Sakai ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Mariko Suzuki ,  Makoto Wada

IPC分类号： H01L21/28

CPC分类号： H01L21/76879 ,  H01L21/28556 ,  H01L21/76876 ,  H01L21/76883 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： a manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.

摘要翻译： 半导体衬底的制造方法包括以下步骤：在衬底上形成第一布线层; 在所述布线层上形成具有通孔的层间绝缘膜; 在通孔中形成碳纳米管; 完全对基材进行氟化处理; 在其中具有碳纳米管的通孔中形成嵌入膜; 并抛光衬底以使衬底完全平坦化。

公开(公告)号：US08198193B2

公开(公告)日：2012-06-12

申请号：US13041543

申请日：2011-03-07

申请人： Naoshi Sakuma ,  Tadashi Sakai ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Mariko Suzuki ,  Makoto Wada

发明人： Naoshi Sakuma ,  Tadashi Sakai ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Mariko Suzuki ,  Makoto Wada

IPC分类号： H01L21/4763

CPC分类号： H01L21/76879 ,  H01L21/28556 ,  H01L21/76876 ,  H01L21/76883 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.

摘要翻译： 半导体衬底的制造方法包括以下步骤：在衬底上形成第一布线层; 在所述布线层上形成具有通孔的层间绝缘膜; 在通孔中形成碳纳米管; 完全对基材进行氟化处理; 在其中具有碳纳米管的通孔中形成嵌入膜; 并抛光衬底以使衬底完全平坦化。

公开(公告)号：US08398927B2

公开(公告)日：2013-03-19

申请号：US12495004

申请日：2009-06-30

申请人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

发明人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

IPC分类号： B01J19/08

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/16

摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.

摘要翻译： 碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

公开(公告)号：US08878190B2

公开(公告)日：2014-11-04

申请号：US13555430

申请日：2012-07-23

申请人： Mariko Suzuki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Yuichi Yamazaki

发明人： Mariko Suzuki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Yuichi Yamazaki

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L29/66 ,  H01L29/872 ,  H01L21/02 ,  H01L29/861

CPC分类号： H01L21/02527 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02576 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8613 ,  H01L29/872

摘要： A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.

摘要翻译： 根据本实施例的半导体器件包括具有从（100）面倾斜的表面平面的金刚石基板在<011±10度的方向上在10度至40度的范围内，以及n型金刚石半导体 含有磷（P）的层并形成在上述表面上方。