公开(公告)号：US06962828B1

公开(公告)日：2005-11-08

申请号：US09711908

申请日：2000-11-15

申请人： Norikatsu Koide ,  Masayoshi Koike ,  Shiro Yamasaki ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Norikatsu Koide ,  Masayoshi Koike ,  Shiro Yamasaki ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L21/86 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01S5/0213 ,  H01S5/32341

摘要： A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.

摘要翻译： 一种新颖的发光器件包括具有包含In x N Ga 1-X N的发光层的锡箔衬底，其中铟摩尔分数X的临界值为 通过铟摩尔分数X和发射光的波长λ之间的新衍生关系来确定。

公开(公告)号：US06188087B1

公开(公告)日：2001-02-13

申请号：US08925323

申请日：1997-09-08

申请人： Norikatsu Koide ,  Masayoshi Koike ,  Shiro Yamasaki ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Norikatsu Koide ,  Masayoshi Koike ,  Shiro Yamasaki ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01S5/0213 ,  H01S5/32341

摘要： A novel light-emitting device includes a sapphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength &lgr; of emitted light.

摘要翻译： 一种新颖的发光器件包括具有包含InXGa1-XN的发光层的蓝宝石衬底，其中铟摩尔分数X的临界值由新的衍生的铟摩尔分数X与发射的波长长度之间的关系确定 光。

公开(公告)号：US5862167A

公开(公告)日：1999-01-19

申请号：US863397

申请日：1997-05-27

申请人： Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Junichi Umezaki ,  Naoki Shibata ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Junichi Umezaki ,  Naoki Shibata ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01S5/183 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/105 ,  H01L33/32 ,  H01S5/18375 ,  H01L33/405 ,  H01L33/465 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/32341

摘要： A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.

摘要翻译： 提供一种发光二极管或激光二极管，其使用满足式（Al x Ga 1-x）y In 1-y N的III族氮化物化合物半导体，包括0≤x≤1，0≤y< = 1。 提供了一种双异质结结构，其在活性层之间具有更宽带隙的层之间夹持有源层。 二极管具有多层结构，其具有反射发射光的反射层或反射抑制层。 二极管的发射光在垂直于双异质结结构的方向上离开二极管。 在与光出口相反的方向上发射的光被反射膜反射到光出口的方向。 此外，设置在光出口处或附近的反射抑制膜通过最小化或防止反射来帮助释放出射光。 结果，光可以被发光二极管有效地发射。

公开(公告)号：US5604763A

公开(公告)日：1997-02-18

申请号：US423940

申请日：1995-04-19

申请人： Hisaki Kato ,  Norikatsu Koide ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Hisaki Kato ,  Norikatsu Koide ,  Masayoshi Koike ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01S5/02 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/0213

摘要： An improved laser diode is made of a gallium nitride compound semiconductor ((Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N; 0.ltoreq.x.ltoreq.1; 0.ltoreq.x.ltoreq.1) with a double heterojunction structure having the active layer held between layers having a greater band gap. The laser diode comprises mirror surfaces formed by cleaving the multi-layered coating and the sapphire substrate in directions parallel to (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity.

摘要翻译： 改进的激光二极管由氮化镓化合物半导体（（Al x Ga 1-x）y In 1-y N; 0 （c轴）平行的方向上切割多层涂层和蓝宝石衬底而形成的镜面。 通过用ZnO选择性液体蚀刻剂的湿蚀刻选择性地除去中间氧化锌（ZnO）层，以便在蓝宝石衬底和半导体激光元件层的最底层子层之间形成间隙。 借助于间隙切割半导体激光元件层，并将所得到的切割平面用作激光腔的镜面。

公开(公告)号：US5620557A

公开(公告)日：1997-04-15

申请号：US494846

申请日：1995-06-26

申请人： Katsuhide Manabe ,  Masayoshi Koike ,  Hisaki Kato ,  Norikatsu Koide ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Katsuhide Manabe ,  Masayoshi Koike ,  Hisaki Kato ,  Norikatsu Koide ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： C30B25/02 ,  H01L33/32 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  H01L33/0075 ,  Y10S117/915

摘要： A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.

摘要翻译： 一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层（3a，3b）的方法，包括x = 0，y = 0和x = y = 0，以及 利用半导体层（3a，3b）之一作为基板（3）的LED（10）包括在蓝宝石基板（1）的每一侧上形成两个氧化锌（ZnO）中间层（2a，2b）的步骤， 形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层（3a，3b），包括x = 0，y = 0和x = y = 0，各层叠在每个中间ZnO层 ，2b），并且通过仅用于ZnO层（2a，2b）的蚀刻液蚀刻从中分离出中间ZnO层（2a，2b）和蓝宝石衬底（1）。 如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极（6,7）的相对侧上的n和p个MOVPE层（4,5），以形成在450nm区域中发射的LED，并且具有 器件电阻低。

公开(公告)号：US5583879A

公开(公告)日：1996-12-10

申请号：US423946

申请日：1995-04-19

申请人： Shiro Yamazaki ,  Norikatsu Koide ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Shiro Yamazaki ,  Norikatsu Koide ,  Katsuhide Manabe ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01S5/30 ,  H01S5/323 ,  H01S3/18 ,  H01L3/00

CPC分类号： H01S5/32341 ,  H01S5/3086

摘要： A gallium nitride group compound semiconductor laser diode (10) satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 comprises by a double hetero-junction structure sandwiching an active layer (5) between layers (4, 6) having wider band gaps than the active layer (5). The active layer (5) may comprise magnesium (Mg) doped p-type conductive gallium nitride group compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1 . In another embodiment, the active layer (5) is doped with silicon (Si).

摘要翻译： 满足式（Al x Ga 1-x）y In 1-y N，包括0≤x≤1且0≤y≤1的氮化镓族化合物半导体激光二极管（10） 在具有比活性层（5）更宽的带隙的层（4,6）之间夹着有源层（5）的结结构结构。 有源层（5）可以包括满足式（Al x Ga 1-x）y In 1-y N的包含镁（Mg）的p型导电氮化镓族化合物半导体，包括0≤x≤1和0≤ y

公开(公告)号：US06326236B1

公开(公告)日：2001-12-04

申请号：US09497814

申请日：2000-02-03

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2144

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

公开(公告)号：US6040588A

公开(公告)日：2000-03-21

申请号：US925325

申请日：1997-09-08

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L29/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L29/06 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： A semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of In.sub.Y1 Ga.sub.1-Y1 N (Y1.gtoreq.0) and a quantum well layer being made of In.sub.Y2 Ga.sub.1-Y1 N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 一种半导体发光器件，包括以下步骤：形成第一半导体层; 通过层叠由InY1Ga1-Y1N（Y1> / = 0）构成的阻挡层和由InY2Ga1-Y1N（Y2> Y1和Y2> 0）构成的量子阱层，在第一层上形成超晶格结构的发光层 半导体层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US06821800B2

公开(公告)日：2004-11-23

申请号：US10326398

申请日：2002-12-23

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US06541293B2

公开(公告)日：2003-04-01

申请号：US10158830

申请日：2002-06-03

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。