摘要:
A length measuring device for performing length measurement and an exposure apparatus for performing an exposure operation on a first object having a plurality of alignment patterns thereon, includes an alignment detector for detecting the relative positional relation between the first object and a second object having a plurality of reference alignment patterns used for aligning the first object therewith, and for detecting an alignment condition between the alignment patterns of the first and second objects, a movement device for moving the first and second objects relative to each other, a measurement device for measuring the amount of movement of the movement device, and a length measurement device for performing measurement of the space between the plurality of alignment patterns formed on the first object. The length measurement device performs length measurement on the basis of successive alignment conditions detected by successive alignment condition detection operations of the alignment detector between the plurality of reference alignment patterns on the second object and the plurality of alignment patterns on the first object, as well as the amount of movement of the movement device measured by the measurement device during the successive alignment condition detection operations of the alignment detector.
摘要:
A measuring method that utilizes a bandpass filter and a measurement apparatus to measure an intensity of light having a predetermined wavelength among lights emitted from a light source, the bandpass filter transmitting the light having the predetermined wavelength, the measurement apparatus measuring an absolute intensity of an incident light includes the steps of measuring an output of the measurement apparatus continuously, stopping or starting an emission of the light source in the measuring step, calculating a first extreme value t→t0−0 and a second extreme value t→t0+0 in the output of the measurement apparatus at time t0 where t is time in the measuring step, and t0 is time when the emission of the light source stops; and calculating a difference between the first extreme value t→t0−0 and the second extreme value t→t0+0.
摘要:
Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device. In another preferred from, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, a gas filter disposed in a portion of a light path of the EUV light and being filled with a predetermined gas, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of the reception of EUV light by the light receiving device.
摘要:
An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.
摘要:
An exposure method for exposing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
摘要:
An exposure method for posing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.
摘要:
Disclosed are an object holding process and and an apparatus therefor in which a process strain of the object can be accurately compensated for. When the exposure operation is started, the bottom surface of the object is held by a holding unit. If the object has a strain, the process strain is calculated. Here, if the process strain is larger than a tolerance, the temperature of the object is set to an object setting temperature in a position other than an exposure position in order to contract or expand the object by a predetermined amount for a magnification correction. The bottom surface of the object is then held by the holding unit again, and the exposure of the object is performed in the exposure position.
摘要:
In an SOR exposure system for transferring patterns on masks to semiconductor wafers by using SOR radiation reflected by an X-ray reflecting mirror, a first shutter device for shielding at least .gamma. rays and a second shutter device for shielding X-rays are provided between the SOR ring and the mirror inside a beam port, and an exposure adjustment device for adjusting the amount of exposure when a circuit pattern on a mask is transferred to a wafer is provided between the mirror and the wafer. As a result, the human body can be protected against radiation rays, such as gamma rays, generated from the SOR ring when electrons are implanted thereto or when the SOR ring is stopped. Damage to the X-ray reflecting mirror caused by radiation rays is reduced, and stable reflectance of the mirror can be obtained. Maintenance of the SOR exposure system is also made easier.
摘要:
Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device. In another preferred from, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, a gas filter disposed in a portion of a light path of the EUV light and being filled with a predetermined gas, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of the reception of EUV light by the light receiving device.
摘要:
A measuring apparatus according for measuring relative positions between a first mark on a movable reticle stage to hold a reticle, and a second mark on a movable object stage to hold an object to be exposed, the apparatus includes a detector for detecting light that has passed the first and second marks, and a processor for calculating the relative positions based on an output of the detector, wherein each of the first and second marks includes plural patterns to direct the light, at least ones of widths and intervals of the plural patterns being non-uniform.