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    SOR exposure system and method of manufacturing semiconductor devices using same
    1.
    发明授权
    SOR exposure system and method of manufacturing semiconductor devices using same 失效
    SOR曝光系统及使用其的半导体器件的制造方法

    公开(公告)号：US5581590A

    公开(公告)日：1996-12-03

    申请号：US272374

    申请日：1994-07-06

    申请人： Makiko Mori ,  Kunitaka Ozawa ,  Mitsuaki Amemiya

    发明人： Makiko Mori ,  Kunitaka Ozawa ,  Mitsuaki Amemiya

    IPC分类号： G03F7/20 ,  H01L21/027 ,  G21K5/00

    CPC分类号： G03F7/708

    摘要： In an SOR exposure system for transferring patterns on masks to semiconductor wafers by using SOR radiation reflected by an X-ray reflecting mirror, a first shutter device for shielding at least .gamma. rays and a second shutter device for shielding X-rays are provided between the SOR ring and the mirror inside a beam port, and an exposure adjustment device for adjusting the amount of exposure when a circuit pattern on a mask is transferred to a wafer is provided between the mirror and the wafer. As a result, the human body can be protected against radiation rays, such as gamma rays, generated from the SOR ring when electrons are implanted thereto or when the SOR ring is stopped. Damage to the X-ray reflecting mirror caused by radiation rays is reduced, and stable reflectance of the mirror can be obtained. Maintenance of the SOR exposure system is also made easier.

    摘要翻译： 在通过使用由X射线反射镜反射的SOR辐射将掩模上的图案转印到半导体晶片的SOR曝光系统中，至少屏蔽至少伽马射线的第一快门装置和用于屏蔽X射线的第二快门装置 SOR环和光束端口内的反射镜，以及用于当将掩模上的电路图案转印到晶片时调节曝光量的曝光调节装置设置在反射镜和晶片之间。 结果，当电子被植入其中时或当SOR环停止时，可以保护人体免受从SOR环产生的辐射线，例如γ射线。 由放射线引起的对X射线反射镜的伤害降低，反射镜的反射率稳定。 SOR曝光系统的维护也变得更加容易。

    Wafer table and exposure apparatus with the same
    5.
    发明授权
    Wafer table and exposure apparatus with the same 失效
    晶圆台和曝光装置相同

    公开(公告)号：US5231291A

    公开(公告)日：1993-07-27

    申请号：US821888

    申请日：1992-01-17

    申请人： Mitsuaki Amemiya ,  Eiji Sakamoto ,  Koji Uda ,  Kunitaka Ozawa ,  Kazunori Iwamoto ,  Shunichi Uzawa ,  Mitsuji Marumo

    发明人： Mitsuaki Amemiya ,  Eiji Sakamoto ,  Koji Uda ,  Kunitaka Ozawa ,  Kazunori Iwamoto ,  Shunichi Uzawa ,  Mitsuji Marumo

    IPC分类号： G03F7/20 ,  H01L21/00 ,  H01L21/687

    CPC分类号： H01L21/67109 ,  G03F7/2041 ,  G03F7/707 ,  G03F7/70866 ,  G03F7/70875

    摘要： A wafer table includes a wafer holding surface for holding a wafer by attraction; a flow passageway through which a temperature adjusting medium flows to remove any heat in the wafer table; a temperature measuring system for measuring the temperature of the wafer held by the wafer holding surface; a temperature adjusting system disposed between the wafer holding surface and the flow passageway; a temperature setting system for setting a temperature related to the wafer held by the wafer holding surface; a flow rate controlling system for controlling the flow rate of the temperature adjusting medium to be circulated through the flow passageway; and a temperature controlling system for controlling the operation of the temperature adjusting system related to heat, on the basis of a value set by the temperature setting system and a value measured by the temperature measuring system.

    摘要翻译： 晶片台包括用于通过吸引保持晶片的晶片保持表面; 流动通道，温度调节介质通过该通道流动以去除晶片台中的任何热量; 用于测量由晶片保持表面保持的晶片的温度的温度测量系统; 设置在晶片保持表面和流动通道之间的温度调节系统; 用于设定与晶片保持面保持的晶片有关的温度的温度设定系统; 流量控制系统，用于控制温度调节介质流过所述流动通道的流量; 以及温度控制系统，用于基于由温度设定系统设定的值和由温度测量系统测量的值来控制与热量相关的温度调节系统的操作。

    Measuring method, exposure apparatus, and device manufacturing method
    6.
    发明授权
    Measuring method, exposure apparatus, and device manufacturing method 失效
    测量方法，曝光装置和装置制造方法

    公开(公告)号：US07465936B2

    公开(公告)日：2008-12-16

    申请号：US11359303

    申请日：2006-02-21

    申请人： Mitsuaki Amemiya

    发明人： Mitsuaki Amemiya

    IPC分类号： G01T1/16

    CPC分类号： G03F7/7085 ,  G01J1/26 ,  G01J1/429 ,  G03F7/70558

    摘要： A measuring method that utilizes a bandpass filter and a measurement apparatus to measure an intensity of light having a predetermined wavelength among lights emitted from a light source, the bandpass filter transmitting the light having the predetermined wavelength, the measurement apparatus measuring an absolute intensity of an incident light includes the steps of measuring an output of the measurement apparatus continuously, stopping or starting an emission of the light source in the measuring step, calculating a first extreme value t→t0−0 and a second extreme value t→t0+0 in the output of the measurement apparatus at time t0 where t is time in the measuring step, and t0 is time when the emission of the light source stops; and calculating a difference between the first extreme value t→t0−0 and the second extreme value t→t0+0.

    摘要翻译： 一种利用带通滤波器和测量装置测量从光源发出的光中的具有预定波长的光的强度的测量方法，所述带通滤光器透射具有预定波长的光，所述测量装置测量绝对强度 入射光包括在测量步骤中连续地测量测量设备的输出，停止或开始光源的发射的步骤，计算第一极值t-> t0-0和第二极值t-> t0 + 0在测量装置的时间t0，其中t是测量步骤中的时间，t0是光源的发射停止的时间; 并计算第一极值t→t0-0与第二极值t→t0 + 0之差。

    Apparatus for evalulating EUV light source, and evaluation method using the same
    7.
    发明申请
    Apparatus for evalulating EUV light source, and evaluation method using the same 失效
    用于评价EUV光源的装置及使用其的评价方法

    公开(公告)号：US20070002474A1

    公开(公告)日：2007-01-04

    申请号：US11082404

    申请日：2005-03-17

    申请人： Mitsuaki Amemiya ,  Akira Miyake

    发明人： Mitsuaki Amemiya ,  Akira Miyake

    IPC分类号： G02B5/08

    CPC分类号： G02B17/0631 ,  B82Y10/00 ,  G02B5/22 ,  G02B17/0642 ,  G02B17/0663 ,  G21K2201/061

    摘要： Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device. In another preferred from, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, a gas filter disposed in a portion of a light path of the EUV light and being filled with a predetermined gas, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of the reception of EUV light by the light receiving device.

    摘要翻译： 公开了一种用于测量EUV光源的聚光点的位置，大小和/或形状的测量装置。 在一个优选形式中，该装置包括用于接收从光会聚点发散的EUV光的光接收装置，用于将EUV光引向光接收装置的光学系统，设置在光路的一部分中的遮光构件，用于 EUV光并且具有多个开口，以及用于基于光接收装置的EUV光的接收来检测在聚光点处的EUV光的空间分布的系统。 在另一个优选的实施例中，该装置包括用于接收从光会聚点发散的EUV光的光接收装置，设置在EUV光的光路部分中并被预定气体填充的气体过滤器的系统， 基于由光接收装置接收到的EUV光，在光会聚点检测EUV光的空间分布。

    Alignment apparatus, exposure apparatus and device fabrication method
    8.
    发明申请
    Alignment apparatus, exposure apparatus and device fabrication method 失效
    对准装置，曝光装置和装置制造方法

    公开(公告)号：US20060044538A1

    公开(公告)日：2006-03-02

    申请号：US11214252

    申请日：2005-08-29

    申请人： Mitsuaki Amemiya ,  Masahito Shinohara

    发明人： Mitsuaki Amemiya ,  Masahito Shinohara

    IPC分类号： G03B27/52

    CPC分类号： G03F9/7088 ,  G03F9/7065 ,  G03F9/7096

    摘要： An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.

    摘要翻译： 一种对准装置，用于将通过使用波长为1nm至50nm的光来支撑具有曝光图案的掩模的掩模台和支撑物体的对准装置，所述对准装置包括用于形成 与掩模或掩模台上形成的第二参考图案相似的第一参考图案，以及用于检测来自基板的光的检测部分，其中所述基板和检测部分形成填充有气体的中空壳体。

    Exposure method
    9.
    发明授权
    Exposure method 失效

    公开(公告)号：US06647087B2

    公开(公告)日：2003-11-11

    申请号：US09981080

    申请日：2001-10-18

    申请人： Mitsuaki Amemiya ,  Shunichi Uzawa

    发明人： Mitsuaki Amemiya ,  Shunichi Uzawa

    IPC分类号： G21K500

    CPC分类号： G03F7/7035 ,  G03F1/70 ,  G03F7/001 ,  G03F7/2022 ,  G03F7/70466

    摘要： An exposure method for exposing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

    Exposure method
    10.
    发明授权
    Exposure method 有权
    曝光方法

    公开(公告)号：US06327332B1

    公开(公告)日：2001-12-04

    申请号：US09425223

    申请日：1999-10-22

    申请人： Mitsuaki Amemiya ,  Shunichi Uzawa

    发明人： Mitsuaki Amemiya ,  Shunichi Uzawa

    IPC分类号： H01L2130

    CPC分类号： G03F7/7035 ,  G03F1/70 ,  G03F7/001 ,  G03F7/2022 ,  G03F7/70466

    摘要： An exposure method for posing a workpiece in a proximity exposure system, includes a first exposure step for printing, by exposure, an image of a first mask pattern on a predetermined portion of the workpiece, and a second exposure step for printing, by exposure, an image of a second mask pattern, different from the first mask pattern, on the predetermined portion of the workpiece, wherein exposures in the first and second exposure steps are performed superposedly, prior to a development process.

    摘要翻译： 一种用于在接近曝光系统中曝光工件的曝光方法包括：第一曝光步骤，用于通过曝光打印在工件的预定部分上的第一掩模图案的图像;以及第二曝光步骤，用于通过曝光打印， 在工件的预定部分上的与第一掩模图案不同的第二掩模图案的图像，其中在显影处理之前，重叠地执行第一和第二曝光步骤中的曝光。