公开(公告)号：US10114290B2

公开(公告)日：2018-10-30

申请号：US15342234

申请日：2016-11-03

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura

IPC: G03F7/20

Abstract: A parameter acquiring method for dose correction of a charged particle beam includes writing evaluation patterns on a substrate coated with resist; writing, while varying writing condition, a peripheral pattern on a periphery of any different one of the evaluation patterns, after an ignorable time as to influence of resist temperature increase due to writing of an evaluation pattern concerned has passed; and calculating a parameter for defining correlation among a width dimension change amount of the evaluation pattern concerned, a temperature increase amount of the evaluation pattern concerned, and a backscatter dose reaching the evaluation pattern concerned, by using, under each writing condition, a width dimension of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned at each shot time, and the backscatter dose reaching the evaluation pattern concerned from each shot.

公开(公告)号：US09336980B2

公开(公告)日：2016-05-10

申请号：US14663971

申请日：2015-03-20

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura

IPC: H01J37/10 ,  H01J37/147 ,  H01J37/04

CPC classification number: H01J37/1471 ,  H01J37/045 ,  H01J37/10 ,  H01J2237/043 ,  H01J2237/063 ,  H01J2237/06375 ,  H01J2237/1502

Abstract: An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.

Abstract translation: 电子束写入装置包括与电子枪系统相对于光轴方向布置在下游侧的发射电子束的电子枪系统，高度调节单元，以可变地调节电子枪的高度位置 系统，电子透镜，相对于光轴方向布置在与高度调节单元相比的下游侧，以使电子束会聚;透镜控制单元，用于控制电子枪的每个可变调节和改变的高度位置 系统，使电子束在预定位置形成交叉的电子透镜，以及与电子透镜相对于光轴方向配置在下游侧的物镜，以聚焦通过电子的电子束 镜片。

公开(公告)号：US11961708B2

公开(公告)日：2024-04-16

申请号：US17236007

申请日：2021-04-21

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura ,  Noriaki Nakayamada

IPC: H01J37/00 ,  G03F7/00 ,  H01J37/12 ,  H01J37/147 ,  H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3174 ,  G03F7/70008 ,  G03F7/70558 ,  H01J37/12 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/3026 ,  H01L21/0274 ,  H01J2237/20228 ,  H01J2237/31761

Abstract: Position shifts caused by charging phenomena can be corrected with high accuracy. A charged particle beam writing apparatus includes an exposure-amount distribution calculator calculating an exposure amount distribution of a charged particle beam using a pattern density distribution and a dose distribution, a fogging charged particle amount distribution calculator calculating a plurality of fogging charged particle amount distributions by convoluting each of a plurality of distribution functions for fogging charged particles with the exposure amount distribution, a charge-amount distribution calculator calculating a charge amount distribution due to direct charge using the pattern density distribution, the dose distribution, and the exposure amount distribution, and calculating a plurality of charge amount distributions due to fogging charge using the plurality of fogging charged particle amount distributions, a position shift amount calculator calculating a position shift amount of a writing position based on the charge amount distribution due to direct charge and the plurality of charge amount distributions due to fogging charge, a corrector correcting an exposure position using the position shift amount, and a writer exposing the corrected exposure position to a charged particle beam.

公开(公告)号：US10699877B2

公开(公告)日：2020-06-30

申请号：US16401318

申请日：2019-05-02

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Haruyuki Nomura ,  Takashi Kamikubo

IPC: H01J37/317 ,  G03F7/20 ,  H01J37/304

Abstract: A charged-particle beam writing apparatus includes a writing chamber to house a stage having a writing object placed thereon, a beam irradiator to irradiate a charged particle beam to the writing object placed on the stage, a stage driver to move the stage, a temperature distribution calculator to calculate temperature distribution of the writing object caused by a heat source in the writing chamber, based on movement history information of the stage, a deformed amount calculator to calculate a deformed amount of the writing object based on a constraint condition of the writing object placed on the stage and the calculated temperature distribution, and a position corrector to correct an irradiation position of the charged particle beam to the writing object based on the calculated deformed amount. The beam irradiator irradiates the charged particle beam based on the irradiation position corrected by the position corrector.

公开(公告)号：US12249483B2

公开(公告)日：2025-03-11

申请号：US17929145

申请日：2022-09-01

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/304

Abstract: In one embodiment, a charged particle beam writing method includes transferring a substrate to a writing chamber of a charged particle beam writing apparatus by use of a transfer mechanism while maintaining each of the writing chamber and the transfer mechanism at a predetermined temperature, calculating correction amounts for charged particle beams based on correction data for charged particle beam irradiation positions each associated with a previously obtained elapsed time from a predetermined starting point in time of transfer of the substrate and the elapsed time at a point in time of irradiation with each of the charged particle beams, and applying the charged particle beams to positions corrected based on the calculated correction amounts for the charged particle beams to write a pattern on the substrate.

公开(公告)号：US10460909B2

公开(公告)日：2019-10-29

申请号：US15888118

申请日：2018-02-05

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura

IPC: H01J37/317 ,  H01J37/04 ,  H01J37/24 ,  H01J37/09 ,  H01J37/10

Abstract: In one embodiment, a charged particle beam writing apparatus includes a current limiting aperture, a blanking deflector switching between beam ON and beam OFF so as to control an irradiation time by deflecting the charged particle beam having passed through the current limiting aperture, a blanking aperture blocking the charged particle beam deflected by the blanking deflector in such a manner that the beam OFF state is entered, and an electron lens disposed between the current limiting aperture and the blanking aperture. A lens value set for the electron lens is substituted into a given function to calculate an offset time. The offset time is added to an irradiation time for writing a pattern to correct the irradiation time. The blanking deflector switches between the beam ON and the beam OFF based on the corrected irradiation time.

公开(公告)号：US11804361B2

公开(公告)日：2023-10-31

申请号：US17661188

申请日：2022-04-28

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura ,  Noriaki Nakayamada ,  Munehiro Ogasawara

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/302 ,  H01J37/304

CPC classification number: H01J37/3174 ,  H01J37/147 ,  H01J37/3026 ,  H01J37/3045

Abstract: In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

公开(公告)号：US20220384142A1

公开(公告)日：2022-12-01

申请号：US17661188

申请日：2022-04-28

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura ,  Noriaki Nakayamada ,  Munehiro Ogasawara

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/304 ,  H01J37/147

Abstract: In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

公开(公告)号：US09673018B2

公开(公告)日：2017-06-06

申请号：US15145398

申请日：2016-05-03

Applicant: NuFlare Technology, Inc.

Inventor： Haruyuki Nomura

IPC: H01J37/10 ,  H01J37/14 ,  H01J37/317 ,  H01J37/063 ,  H01J37/09

CPC classification number: H01J37/14 ,  H01J37/063 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/0451 ,  H01J2237/0458 ,  H01J2237/0653

Abstract: A charged particle beam writing apparatus includes a limiting aperture member at the downstream side of the emission source, arranged such that its height position can be selectively adjusted, according to condition, to be one of the n-th height position (n being an integer of 1 or more) based on the n-th condition depending on at least one of the height position of the emission source and an emission current value, and the (n+m)th height position (m being an integer of 1 or more) based on the (n+m)th condition depending on at least one of the height position of the emission source and the emission current value, and a shaping aperture member at the downstream side of the electron lens and the limiting aperture member to shape the charged particle beam by letting a part of the charged particle beam pass through a second opening.