公开(公告)号：US20150228871A1

公开(公告)日：2015-08-13

申请号：US14424688

申请日：2013-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Stephan Haneder ,  Tomasz Swietlik ,  Christoph Walter ,  Andreas Rozynski ,  Markus Graul ,  Karsten Auen ,  Jürgen Dachs

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/48 ,  H01L33/00

CPC classification number: H01L33/60 ,  H01L33/005 ,  H01L33/48 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/028

Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Abstract translation: 在制造激光二极管的方法中，在晶片上产生多个激光二极管。 将晶片分解为晶片，每个晶片片具有并排布置的多个激光二极管。 将一个晶片片插入到第一安装件中，该第一安装件包括与晶片片的前表面重叠的第一覆盖元件，并且遮蔽晶片的正面的底部区域。 次要层沉积在晶片前面的未遮蔽的上部区域上。 晶片片被插入到第二安装件中，该第二安装件包括遮挡前表面上部区域的次要层的第二覆盖元件。 导电接触层沉积在晶片的正面的未遮蔽的底部区域上。 随后将晶片分解成单独的激光二极管。

公开(公告)号：US09705057B2

公开(公告)日：2017-07-11

申请号：US14424688

申请日：2013-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Stephan Haneder ,  Tomasz Swietlik ,  Christoph Walter ,  Andreas Rozynski ,  Markus Graul ,  Karsten Auen ,  Jürgen Dachs

IPC: H01S5/022 ,  H01L33/60 ,  H01S5/028 ,  H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01S5/02

CPC classification number: H01L33/60 ,  H01L33/005 ,  H01L33/48 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/028

Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

公开(公告)号：US09608401B2

公开(公告)日：2017-03-28

申请号：US14653698

申请日：2013-12-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Roland Enzmann ,  Markus Horn ,  Markus Graul ,  Thomas Veit ,  Juergen Dachs ,  Stefan Listl ,  Markus Arzberger

IPC: H01S5/02 ,  H01S5/323 ,  H01S5/022

CPC classification number: H01S5/0201 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/02236 ,  H01S5/0226 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/323 ,  H01S5/32333

Abstract: Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.

公开(公告)号：US09450376B2

公开(公告)日：2016-09-20

申请号：US14420411

申请日：2013-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Stephan Haneder ,  Markus Arzberger ,  Christoph Walter ,  Tomasz Swietlik ,  Harald König ,  Robin Fehse ,  Mathias Kämpf ,  Markus Graul ,  Markus Horn

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/022

CPC classification number: H01S5/0201 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。

公开(公告)号：US20150207293A1

公开(公告)日：2015-07-23

申请号：US14420411

申请日：2013-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Stephan Haneder ,  Markus Arzberger ,  Christoph Walter ,  Tomasz Swietlik ,  Harald König ,  Robin Fehse ,  Mathias Kämpf ,  Markus Graul ,  Markus Horn

IPC: H01S5/02 ,  H01S5/022

CPC classification number: H01S5/0201 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract translation: 一种制造半导体激光元件的方法包括：A）为半导体激光元件提供具有多个载流子的至少一个载体组件，C）提供具有多个半导体激光二极管的至少一个激光棒，所述半导体激光二极管包括共同的生长衬底和 在其上生长的半导体层序列，D）将激光棒装配在载体组件的顶侧，以及E）在D）之后单分解以形成半导体激光元件。