Method of producing an optoelectronic component

    公开(公告)号:US10454240B2

    公开(公告)日:2019-10-22

    申请号:US15761585

    申请日:2016-09-15

    摘要: A method of producing an optoelectronic component includes providing a carrier including a top side; creating at the top side of the carrier a region that is recessed with respect to a mounting region of the top side to form a step between the mounting region and the recessed region; arranging at the top side of the carrier a metallization extending over the mounting region and the recessed region; creating a separating track in the metallization, wherein the metallization is completely severed at least in sections in the mounting region and is at least not completely severed in the recessed region; and arranging an optoelectronic semiconductor chip above the mounting region of the top side, wherein the optoelectronic semiconductor chip is aligned at the separating track.

    Laser component
    4.
    发明授权

    公开(公告)号:US10431954B2

    公开(公告)日:2019-10-01

    申请号:US15654136

    申请日:2017-07-19

    摘要: A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip.

    Light-emitting component
    5.
    发明授权

    公开(公告)号:US11355897B2

    公开(公告)日:2022-06-07

    申请号:US16092422

    申请日:2017-04-12

    摘要: In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

    LASER MODULE WITH AN OPTICAL COMPONENT
    7.
    发明申请

    公开(公告)号:US20190131766A1

    公开(公告)日:2019-05-02

    申请号:US16095426

    申请日:2017-04-26

    IPC分类号: H01S5/022 G02B1/11 H01S5/042

    摘要: A laser module includes a housing with a cavity and a window opening, a side-emitting semiconductor laser diode, arranged in the cavity that emits light radiation in the form of a laser beam, an optical deflection structure that deflects the laser beam, emitted by the semiconductor laser diode, in a direction of the window opening, and an optical output coupling structure arranged in the region of the window opening to output couple the laser beam in a defined direction and/or with a defined emission profile, wherein the optical deflection structure and the optical output coupling structure are configured in one piece in the form of a shared optical component.

    Semiconductor laser, laser assembly and method of making a semiconductor laser

    公开(公告)号:US10033158B1

    公开(公告)日:2018-07-24

    申请号:US15845983

    申请日:2017-12-18

    摘要: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.