公开(公告)号：US20180358522A1

公开(公告)日：2018-12-13

申请号：US15771827

申请日：2016-10-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Stefan Listl ,  Björn Hoxhold ,  Frank Singer

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/44 ,  H01L33/48 ,  H01L33/56 ,  H01L33/50 ,  H01L23/00

CPC classification number: H01L33/62 ,  G09F9/3026 ,  G09F9/33 ,  H01L24/48 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/483 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic component includes a carrier, and a housing material arranged above a top side of a carrier, wherein a cavity is configured in the housing material, a top side of a first optoelectronic semiconductor chip is arranged in the cavity, the first optoelectronic semiconductor chip has a first electrical connection pad arranged at the top side of the first optoelectronic semiconductor chip, and electrically conductively connects by a bond wire to a first contact pad arranged at the top side of the carrier, a first section of the bond wire is arranged in the cavity and a second section of the bond wire is embedded the housing material, a covering material is arranged in the cavity and covers at least one part of the top side of the first optoelectronic semiconductor chip, and the first section of the bond wire is embedded in the covering material.

公开(公告)号：US10923640B2

公开(公告)日：2021-02-16

申请号：US15771827

申请日：2016-10-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Stefan Listl ,  Björn Hoxhold ,  Frank Singer

IPC: H01L33/62 ,  H01L25/075 ,  H01L23/00 ,  H01L33/44 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01L33/54 ,  G09F9/302 ,  G09F9/33

Abstract: An optoelectronic component includes a carrier, and a housing material arranged above a top side of a carrier, wherein a cavity is configured in the housing material, a top side of a first optoelectronic semiconductor chip is arranged in the cavity, the first optoelectronic semiconductor chip has a first electrical connection pad arranged at the top side of the first optoelectronic semiconductor chip, and electrically conductively connects by a bond wire to a first contact pad arranged at the top side of the carrier, a first section of the bond wire is arranged in the cavity and a second section of the bond wire is embedded the housing material, a covering material is arranged in the cavity and covers at least one part of the top side of the first optoelectronic semiconductor chip, and the first section of the bond wire is embedded in the covering material.

公开(公告)号：US09608401B2

公开(公告)日：2017-03-28

申请号：US14653698

申请日：2013-12-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Roland Enzmann ,  Markus Horn ,  Markus Graul ,  Thomas Veit ,  Juergen Dachs ,  Stefan Listl ,  Markus Arzberger

IPC: H01S5/02 ,  H01S5/323 ,  H01S5/022

CPC classification number: H01S5/0201 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/02236 ,  H01S5/0226 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/323 ,  H01S5/32333

Abstract: Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.