公开(公告)号：US20190259920A1

公开(公告)日：2019-08-22

申请号：US16332964

申请日：2017-09-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tansen Varghese ,  David O'Brien ,  Georg Roßbach

IPC: H01L33/50 ,  H01L33/62

Abstract: An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.

公开(公告)号：US11061174B2

公开(公告)日：2021-07-13

申请号：US16086133

申请日：2017-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Hubert Halbritter ,  Adrian Stefan Avramescu ,  Thomas Hager ,  Georg Roßbach

IPC: G02B5/18 ,  G02B27/09

Abstract: A diffractive optical element includes a carrier and a plurality of nano- or micro-scale rods arranged above a top side of the carrier, wherein the rods are arranged parallel to one another in a regular grid arrangement. A method of producing a diffractive optical element includes providing a carrier and epitaxially growing a plurality of mutually parallel nano- or micro-scale rods in a regular gird arrangement above a top side of the carrier.

公开(公告)号：US11056621B2

公开(公告)日：2021-07-06

申请号：US16332964

申请日：2017-09-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tansen Varghese ,  David O'Brien ,  Georg Roßbach

IPC: H01L33/50 ,  H01L33/62

Abstract: An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.

公开(公告)号：US10243117B2

公开(公告)日：2019-03-26

申请号：US15573820

申请日：2016-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Ion Stoll ,  Georg Roßbach

IPC: H01L33/50 ,  C25D13/02 ,  C25D13/12 ,  H01L33/00 ,  H01L33/32 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L33/48

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.

公开(公告)号：US20180261734A1

公开(公告)日：2018-09-13

申请号：US15573820

申请日：2016-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried Herrmann ,  Ion Stoll ,  Georg Roßbach

IPC: H01L33/50 ,  H01L33/62 ,  H01L33/00 ,  H01L33/54 ,  H01L33/58 ,  H01L33/56 ,  H01L33/32 ,  C25D13/12 ,  C25D13/02

CPC classification number: H01L33/505 ,  C25D13/02 ,  C25D13/12 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/96 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.