摘要:
A method for data storage, in a memory that includes multiple analog memory cells, includes setting a parameter of an iterative process applied to a group of the memory cells based on one or more data values stored in at least one of the memory cells in the memory. The iterative process is performed in the group of the memory cells in accordance with the set parameter.
摘要:
A method for data storage includes assigning in a memory that includes one or more storage devices a first storage area for storage of user data, and a second storage area, which is separate from the first storage area, for storage of redundancy information related to the user data. Input data is processed to produce redundancy data, and the input data is stored in the first storage area using at least one first write command. The redundancy data is stored in the second storage area using at least one second write command, separate from the first write command.
摘要:
A method for data storage includes, in a host system that operates alternately in a normal state and a hibernation state, reserving a hibernation storage space in a non-volatile storage device for storage of hibernation-related information in preparation for entering the hibernation state. While the host system is operating in the normal state, a storage task other than storage of the hibernation-related information is performed using at least a portion of the reserved hibernation storage space.
摘要:
A method for data storage includes accepting data for storage in a memory including multiple analog memory cells. For each memory cell, a respective set of nominal analog values is assigned for representing data values to be stored in the memory cell, by choosing the nominal analog values for a given memory cell in a respective range that depends on interference between the given memory cell and at least one other memory cell in the memory. The data is stored in each memory cell using the respective selected set of the nominal analog values.
摘要:
A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.
摘要:
A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value.
摘要:
A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells.
摘要:
A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is estimated. The estimated CDF is processed so as to compute one or more thresholds. A memory access operation is performed on the cells using the one or more thresholds.
摘要:
A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.
摘要:
A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.