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22 条记录 (耗时 0.025 秒)

    Particle-optical component and system comprising a particle-optical component
    1.
    发明授权
    Particle-optical component and system comprising a particle-optical component 失效

    公开(公告)号：US06642525B2

    公开(公告)日：2003-11-04

    申请号：US09949193

    申请日：2001-09-07

    申请人： Oliver Kienzle ,  Holger Weigand

    发明人： Oliver Kienzle ,  Holger Weigand

    IPC分类号： H01J3700

    CPC分类号： H01J37/3007 ,  H01J37/1474 ,  H01J2237/3175

    摘要： A magnetic lens assembly for providing a magnetic deflection field for a beam of charged particles is disclosed. The assembly includes a focusing lens device for providing a magnetic field which has substantially rotational symmetry in respect of a symmetry axis of the assembly and acts on the beam traversing the magnetic field as a focusing lens with an optical axis, and includes an axis shifting device for producing a corrective magnetic field which is superposable on the magnetic field provided by the focusing lens device and acts on the beam such that the optical axis is shiftable parallel to the symmetry axis of the assembly. The axis shifting device includes a first set of axially spaced apart rings which are positioned concentrically in respect of the symmetry axis and are made of a material which is substantially not electrically conductive and has a high magnetic permeability. At least one axis shifting coil is provided with a plurality of current conductor windings for producing the corrective magnetic field. The current conductor windings of the axis shifting coil engage around at least one of the rings of the first ring set.

    Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
    2.
    发明授权
    Particle-optical systems and arrangements and particle-optical components for such systems and arrangements 有权
    用于这种系统和布置的粒子 - 光学系统和布置以及粒子 - 光学部件

    公开(公告)号：US07244949B2

    公开(公告)日：2007-07-17

    申请号：US11366533

    申请日：2006-03-03

    申请人： Rainer Knippelmeyer ,  Oliver Kienzle

    发明人： Rainer Knippelmeyer ,  Oliver Kienzle

    IPC分类号： G21K5/10 ,  G21K7/00 ,  H01J37/28

    CPC分类号： H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

    摘要： An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

    摘要翻译： 电子 - 光学装置提供用于一次电子束的主光束路径和二次电子的次级光束路径。 电子 - 光学装置包括具有第一，第二和第三磁场区域的磁体装置。 第一磁场区域被主光束路径和次光束路径穿过。 第二磁场区域被布置在第一磁场区域的上游的主光束路径中，并且不被辅助光束路径穿过。 第一和第二磁场区域以基本上相反的方向偏转主光束路径。 第三磁场区域布置在第二磁场区域的下游的次级光束路径中，并且不被第一光束路径穿过。 第一和第三磁场区域以基本上相同的方向偏转次级光束路径。

    Apparatus and method for exposing a radiation sensitive layer by means of charged particles as well as a mask for this purpose
    4.
    发明授权
    Apparatus and method for exposing a radiation sensitive layer by means of charged particles as well as a mask for this purpose 失效

    公开(公告)号：US07015487B2

    公开(公告)日：2006-03-21

    申请号：US09934262

    申请日：2001-08-21

    申请人： Oliver Kienzle ,  Alexander Orchowski

    发明人： Oliver Kienzle ,  Alexander Orchowski

    IPC分类号： H01J37/304

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3045 ,  H01J37/3174

    摘要： A projection apparatus for imaging a pattern of a mask onto a substrate by means of a beam of projected charged particles is disclosed. The apparatus includes a radiation sensitive layer. The apparatus also includes a mask. The mask includes a membrane layer made of a first material, scattering regions forming the pattern and made of a second material scattering the charged particles more than the membrane layer, and a plurality of straightly extending supporting struts spaced apart from one another and supporting the membrane layer together with the scattering regions. The apparatus also includes a projection apparatus. The projection apparatus includes a beam shaping device for producing the projection beam with a predetermined projection beam cross-section in the mask plane, and a positioning device for moving the projection beam cross-section in the mask plane along a predetermined path over the mask parallel to the direction into which the struts extend. The apparatus also includes a sensor for supplying a measuring signal which is dependent on the number of charged particles impinging on a mark region provided on the mask.

    Method and apparatus for analyzing a group of photolithographic masks
    6.
    发明授权
    Method and apparatus for analyzing a group of photolithographic masks 有权
    用于分析一组光刻掩模的方法和装置

    公开(公告)号：US08264535B2

    公开(公告)日：2012-09-11

    申请号：US12597247

    申请日：2008-07-11

    申请人： Oliver Kienzle ,  Rigo Richter ,  Norbert Rosenkranz ,  Yuji Kobiyama ,  Thomas Scheruebl

    发明人： Oliver Kienzle ,  Rigo Richter ,  Norbert Rosenkranz ,  Yuji Kobiyama ,  Thomas Scheruebl

    IPC分类号： H04N7/18

    CPC分类号： G03F1/72 ,  G03F1/30

    摘要： The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

    摘要翻译： 本发明涉及一种用于分析用于光刻的一组至少两个掩模的方法，其中每个掩模包括总结构的子结构，其将在光刻工艺中被引入晶片的层中，并且总共 通过依次引入子结构，在晶片层中引入结构。 在该方法中，将至少两个掩模中的第一个的第一空间图像记录，数字化并存储在数据结构中。 然后，将至少两个掩模中的第二个的第二个空间图像记录，数字化并存储在数据结构中。 从第一和第二空间图像的数据生成组合图像，该组合图像被表示和/或评估。

    Method for the electron-microscopic observation of a semiconductor arrangement and apparatus therefor
    9.
    发明授权
    Method for the electron-microscopic observation of a semiconductor arrangement and apparatus therefor 有权
    半导体装置的电子显微镜观察方法及其装置

    公开(公告)号：US06967328B2

    公开(公告)日：2005-11-22

    申请号：US10614825

    申请日：2003-07-09

    申请人： Oliver Kienzle ,  Rainer Knippelmeyer ,  Ingo Müller

    发明人： Oliver Kienzle ,  Rainer Knippelmeyer ,  Ingo Müller

    IPC分类号： H01L21/66 ,  G01N23/00 ,  G01N23/225 ,  G01Q20/00 ,  G01Q30/02 ,  G01Q30/04 ,  G21K7/00 ,  H01J37/05 ,  H01J37/244 ,  H01J37/28 ,  H01J37/29

    CPC分类号： H01J37/28 ,  H01J2237/2817

    摘要： A method for the electron-microscopic observation of a semiconductor arrangement is provided. It includes providing an electron microscopy optics for imaging secondary electrons emanating from the semiconductor arrangement within an extended object field on a position-sensitive detector, providing an illumination device for emitting a primary energy beam, directing the primary energy beam to at least the object field for extracting there secondary electrons from the semiconductor arrangement. The semiconductor arrangement comprises a region with an upper surface provided by a first material and a recess with a high aspect ratio which is surrounded by the upper surface and has a bottom provided by a second material.

    摘要翻译： 提供了一种用于电子显微镜观察半导体装置的方法。 它包括提供电子显微镜光学器件，用于对在位置敏感检测器上的扩展物体场内的半导体布置发射的二次电子进行成像，提供用于发射一次能量束的照明装置，将一次能量束引导至少一个物场 用于从半导体装置中提取二次电子。 半导体装置包括具有由第一材料提供的上表面的区域和具有高纵横比的凹槽，其被上表面包围并具有由第二材料提供的底部。

    Method and arrangement for repairing photolithography masks
    10.
    发明授权
    Method and arrangement for repairing photolithography masks 有权
    修复光刻掩模的方法和布置

    公开(公告)号：US07916930B2

    公开(公告)日：2011-03-29

    申请号：US11900946

    申请日：2007-09-14

    申请人： Axel Zibold ,  Wolfgang Harnisch ,  Oliver Kienzle

    发明人： Axel Zibold ,  Wolfgang Harnisch ,  Oliver Kienzle

    IPC分类号： G06K9/00

    CPC分类号： G03F1/72 ,  G03F1/84

    摘要： A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

    摘要翻译： 用于修复光刻掩模的方法和装置，其中检查光刻掩模是否存在缺陷，并且产生缺陷的列表，其中至少一种类型的缺陷，其范围及其在光刻掩模上的位置 被分配给每个缺陷，并且这些缺陷被修复。