公开(公告)号：US20140131898A1

公开(公告)日：2014-05-15

申请号：US13906317

申请日：2013-05-30

申请人： Ormet Circuits, Inc.

发明人： Catherine Shearer ,  Michael C Matthews ,  Peter A Matturi ,  Eunsook Barber ,  Rick Weaver

IPC分类号： H01L23/00

CPC分类号： H01L24/27 ,  H01L21/6836 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/06181 ,  H01L2224/27003 ,  H01L2224/2731 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27438 ,  H01L2224/278 ,  H01L2224/27848 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29314 ,  H01L2224/29316 ,  H01L2224/29317 ,  H01L2224/29318 ,  H01L2224/2932 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29349 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/2938 ,  H01L2224/2939 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/30181 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83447 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01004 ,  H01L2924/01048 ,  H01L2924/01052 ,  H01L2924/0108 ,  H01L2924/01034 ,  H01L2924/01084 ,  H01L2924/01076 ,  H01L2224/27 ,  H01L21/78 ,  H01L2224/83 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2224/27436 ,  H01L2221/68381

摘要： Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

摘要翻译： 烧结芯片附着材料为现有技术的替代品提供了具有出色的电，热和机械性能的半导体封装的无铅解决方案。 晶片施加的烧结材料在半导体裸片和被粘物以及整个芯片附着接头处形成冶金结合，并且不会在原始工艺温度下重熔。 公开了应用于晶片的一侧或两侧以及粘贴薄膜应用。

公开(公告)号：US09583453B2

公开(公告)日：2017-02-28

申请号：US13906317

申请日：2013-05-30

申请人： Ormet Circuits, Inc.

发明人： Catherine Shearer ,  Michael C Matthews ,  Peter A Matturi ,  Eunsook Barber ,  Richard Weaver

IPC分类号： H01L23/00 ,  H01L21/683

CPC分类号： H01L24/27 ,  H01L21/6836 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/06181 ,  H01L2224/27003 ,  H01L2224/2731 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27438 ,  H01L2224/278 ,  H01L2224/27848 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29314 ,  H01L2224/29316 ,  H01L2224/29317 ,  H01L2224/29318 ,  H01L2224/2932 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29349 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/2938 ,  H01L2224/2939 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/30181 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83447 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01004 ,  H01L2924/01048 ,  H01L2924/01052 ,  H01L2924/0108 ,  H01L2924/01034 ,  H01L2924/01084 ,  H01L2924/01076 ,  H01L2224/27 ,  H01L21/78 ,  H01L2224/83 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2224/27436 ,  H01L2221/68381

摘要： Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

摘要翻译： 烧结芯片附着材料为现有技术的替代品提供了具有出色的电，热和机械性能的半导体封装的无铅解决方案。 晶片施加的烧结材料在半导体裸片和被粘物以及整个芯片附着接头处形成冶金结合，并且不会在原始工艺温度下重熔。 公开了应用于晶片的一侧或两侧以及粘贴薄膜应用。

公开(公告)号：US09005330B2

公开(公告)日：2015-04-14

申请号：US13732308

申请日：2012-12-31

申请人： Ormet Circuits, Inc.

发明人： Catherine Shearer ,  Peter A Matturri ,  Kenneth C Holcomb ,  Michael C Matthews

IPC分类号： B23K35/26 ,  B22F3/10 ,  B23K35/02 ,  B23K1/20 ,  B23K1/00 ,  B23K1/008 ,  B23K35/30

CPC分类号： B23K35/025 ,  B22F3/1035 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/20 ,  B23K1/203 ,  B23K35/02 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/262 ,  B23K35/264 ,  B23K35/268 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/302 ,  B23K35/3033 ,  B23K2101/40 ,  B23K2101/42

摘要： Transient liquid phase sintering compositions comprising one or more high melting point metals and one or more low melting temperature alloys are known in the art as useful compositions for creating electrically and/or thermally conductive pathways in electronic applications. The present invention provides transient liquid phase sintering compositions that employ non-eutectic low melting temperature alloys for improved sintering and metal matrix properties.

摘要翻译： 包含一种或多种高熔点金属和一种或多种低熔点温度合金的瞬态液相烧结组合物在本领域中是已知的用于在电子应用中产生电和/或导热通路的有用组合物。 本发明提供了使用非共晶低熔点合金来改善烧结和金属基体特性的瞬态液相烧结组合物。