公开(公告)号：US20120190141A1

公开(公告)日：2012-07-26

申请号：US13434860

申请日：2012-03-30

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  YING-CHAO YEH ,  WEN-YU LIN ,  PENG-YI WU ,  SHIH-HSIUNG CHAN

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  YING-CHAO YEH ,  WEN-YU LIN ,  PENG-YI WU ,  SHIH-HSIUNG CHAN

IPC分类号： H01L33/50

CPC分类号： H01L33/08 ,  H01L33/0079

摘要： A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.

摘要翻译： 一种制造多色发光二极管器件的方法，包括以下步骤：在外延衬底上提供外延衬底和形成多重半导体层，其中所述多重半导体层包括n型半导体层，p型半导体层和 活动层 有源层发射第一波长的光。 此后，在多个半导体层上形成第一波长转换层。 第一波长转换层由半导体制成，并吸收一部分第一波长的光并发射第二波长的光，其中第二波长比第一波长长。

公开(公告)号：US20110114983A1

公开(公告)日：2011-05-19

申请号：US13015590

申请日：2011-01-28

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  WEN-YU LIN ,  CHIH-PENG HSU ,  SHIH-HSIUNG CHAN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  WEN-YU LIN ,  CHIH-PENG HSU ,  SHIH-HSIUNG CHAN

IPC分类号： H01L33/10

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

摘要翻译： 具有III族氮化物半导体的光电器件包括导电层，位于导电层上的金属镜层和位于金属镜面层上的III族氮化物半导体层。 III族氮化物半导体层在其上限定了许多微结构。 每个微结构包括至少一个成角度的面，并且每个微结构的倾斜面是III族氮化物半导体层的晶体面。

公开(公告)号：US20140027806A1

公开(公告)日：2014-01-30

申请号：US14037386

申请日：2013-09-26

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  PENG-YI WU ,  WEN-YU LIN ,  CHIH-PANG MA ,  TZU-CHIEN HUNG ,  CHIA-HUI SHEN

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  PENG-YI WU ,  WEN-YU LIN ,  CHIH-PANG MA ,  TZU-CHIEN HUNG ,  CHIA-HUI SHEN

IPC分类号： H01L33/36

CPC分类号： H01L33/36 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.

摘要翻译： 具有提高光提取效率的半导体光电子结构包括基片; 在基板上形成缓冲层，并具有与基板相邻形成有多个槽的图案， 在缓冲层上形成半导体层，在缓冲层上形成n型导体层，在n型导电层上形成有源层，在活性层上形成p型导电层。 在半导体层上形成透明导电层; 在透明导电层上形成p型电极; 在n型导电层上形成n型电极。

公开(公告)号：US20110186856A1

公开(公告)日：2011-08-04

申请号：US12965926

申请日：2010-12-13

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  PENG-YI WU

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  PENG-YI WU

IPC分类号： H01L33/30

CPC分类号： H01L33/30

摘要： A method for manufacturing a light emitting element includes providing a substrate, forming a buffer layer on the substrate, forming a GaN layer on the buffer layer, forming a rough layer on the GaN layer at low temperature, and forming an epitaxial layer on the rough layer, wherein a refraction index of the epitaxial layer exceeds a refraction index of the rough layer. Thus, most light scatters at the rough layer, and then emits upwardly to a light emitting surface, enhancing light extraction efficiency thereof. An epitaxial process of the method is processed in situ in an MOCVD reactor.

摘要翻译： 一种制造发光元件的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成GaN层，在低温下在GaN层上形成粗糙层，在粗糙层上形成外延层 层，其中所述外延层的折射率超过所述粗糙层的折射率。 因此，大多数光在粗糙层散射，然后向上发射到发光表面，提高其光提取效率。 该方法的外延工艺在MOCVD反应器中原位处理。

公开(公告)号：US20120175646A1

公开(公告)日：2012-07-12

申请号：US13305757

申请日：2011-11-29

申请人： SHIH-CHENG HUANG ,  PO-MIN TU

发明人： SHIH-CHENG HUANG ,  PO-MIN TU

IPC分类号： H01L33/32

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

摘要： An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects.

摘要翻译： LED模块包括基座，形成在基座上的电路层和多个LED，每个LED具有连接到电路层的LED管芯。 电路层包括多个连接部分。 每个连接部分包括彼此电绝缘和间隔开的第一连接部分和第二连接部分。 每个LED包括具有第一部分的电极层和与第一部分电绝缘并分别电连接相应连接部分的第一和第二连接部分的第二部分。 LED管芯与第二部分电连接。 在LED管芯上形成透明导电层，并将LED管芯电连接到电极层的第一部分。 除了透明导电层连接之外，电绝缘层位于LED管芯之间并围绕LED管芯。

公开(公告)号：US20120175630A1

公开(公告)日：2012-07-12

申请号：US13300731

申请日：2011-11-21

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  YA-WEN LIN

IPC分类号： H01L33/02 ,  H01L33/48

CPC分类号： H01L33/52 ,  H01L24/24 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/181 ,  H01L2924/00012

摘要： An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent electrically conducting layer from the electrically conductive layer and the second section.

摘要翻译： LED包括电极层，电极层包括彼此电绝缘的第一部分和第二部分; 所述第二部分上的导电层，从所述导电层突出的导电极; 包括在所述导电层上的电绝缘衬底的LED管芯和所述电绝缘衬底上的PN结，所述PN结包括第一电极和第二电极，所述导电极延伸穿过所述电绝缘衬底以电连接 第一电极到第二部分; 在所述LED管芯上的透明导电层，所述透明导电层将所述第二电极与所述第一部分电连接; 以及在LED管芯，导电层和透明导电层之间的电绝缘层，其中电绝缘层使透明导电层与导电层和第二部分绝缘。

公开(公告)号：US20120164773A1

公开(公告)日：2012-06-28

申请号：US13216260

申请日：2011-08-24

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  TZU-CHIEN HUNG ,  YA-WEN LIN

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  TZU-CHIEN HUNG ,  YA-WEN LIN

IPC分类号： H01L33/06

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/12

摘要： A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure.

摘要翻译： 一种制造半导体照明芯片的方法包括以下步骤：提供衬底; 在所述基板上形成第一蚀刻层; 在所述第一蚀刻层上形成连接层; 在连接层上形成第二蚀刻层; 在所述第二蚀刻层上形成照明结构; 并且蚀刻第一蚀刻层，连接层，第二蚀刻层和照明结构，其中第一蚀刻层和第二蚀刻层的蚀刻速率比连接层和照明结构的蚀刻速率大，从而形成 连接层和照明结构均具有倒立的截头锥形结构。

公开(公告)号：US20120100648A1

公开(公告)日：2012-04-26

申请号：US13216244

申请日：2011-08-24

申请人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： SHIH-CHENG HUANG ,  PO-MIN TU ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/46

摘要： A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.

摘要翻译： 制造发光芯片的方法包括以下步骤：提供其上具有多个分离的外延岛的衬底，其中所述外延岛通过沟道彼此间隔开; 用绝缘材料填充通道; 在绝缘材料和外延岛上依次形成反射层，过渡层和基底; 去除衬底和绝缘材料以暴露通道; 并且切割反射层，过渡层和基底，以沿通道形成多个独立的芯片。

公开(公告)号：US20120097976A1

公开(公告)日：2012-04-26

申请号：US13214254

申请日：2011-08-22

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L33/02 ,  H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/405

摘要： A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

摘要翻译： 发光二极管芯片包括导电基板，设置在基板上的反射层，形成在反射层上的半导体结构，设置在半导体结构上的电极和延伸穿过半导体结构的多个狭缝。 半导体结构包括形成在反射层上的P型半导体层，形成在P型半导体层上的发光层和形成在发光层上的N型半导体层。 在半导体结构中和电极周围限定电流扩散区。 槽位于电流扩散区域外部。

公开(公告)号：US20120018847A1

公开(公告)日：2012-01-26

申请号：US13013825

申请日：2011-01-26

申请人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

发明人： PO-MIN TU ,  SHIH-CHENG HUANG ,  SHUN-KUEI YANG ,  CHIA-HUNG HUANG

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/16

摘要： A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate.

摘要翻译： 氮化镓系半导体器件包括复合衬底和氮化镓层。 复合衬底包括硅衬底和填料。 硅衬底包括第一表面和与第一表面相对的第二表面，并且第一表面在其中限定多个凹槽。 将填料填充到硅衬底的第一表面上的槽数中。 填料的热膨胀系数大于硅衬底的热膨胀系数。 氮化镓层形成在硅衬底的第二表面上。