公开(公告)号：US20080102174A1

公开(公告)日：2008-05-01

申请号：US11752285

申请日：2007-05-22

申请人： Paul Jamison ,  Daniel Lee Bizzell ,  Todd Stancombe

发明人： Paul Jamison ,  Daniel Lee Bizzell ,  Todd Stancombe

IPC分类号： A23G3/50 ,  B05B11/00 ,  B65B1/04

CPC分类号： B65D23/003 ,  B65D1/04 ,  B65D1/095 ,  B65D25/22

摘要： A liquid dispenser comprises a body defining an interior containment space for containing a liquid to be dispensed and a structure configured to mount the liquid dispenser onto a drinking container such that the liquid dispenser does not obstruct drinking from a rim of the drinking container.

摘要翻译： 液体分配器包括限定用于容纳要分配的液体的内部容纳空间的主体和被配置为将液体分配器安装到饮用容器上的结构，使得液体分配器不阻碍从饮用容器的边缘饮用。

公开(公告)号：US20080102173A1

公开(公告)日：2008-05-01

申请号：US11752277

申请日：2007-05-22

申请人： Paul Jamison ,  Daniel Lee Bizzell ,  Todd Stancombe

发明人： Paul Jamison ,  Daniel Lee Bizzell ,  Todd Stancombe

IPC分类号： A23G3/50

CPC分类号： B65D23/003 ,  B65D1/04 ,  B65D1/095 ,  B65D25/22

摘要： A method of dispensing a liquid into a drinking container comprises the steps of: (a) providing a liquid dispenser comprising a body defining an interior containment space in which the liquid to be dispensed is contained and a structure for mounting of the body of the liquid dispenser onto the drinking container such that the liquid dispenser does not obstruct drinking from a rim of the drinking container; (b) dispensing the liquid from the liquid dispenser into the drinking container; and (c) mounting the liquid dispenser onto the drinking container via the structure of the liquid dispenser.

摘要翻译： 将液体分配到饮用容器中的方法包括以下步骤：（a）提供液体分配器，其包括限定要容纳待分配液体的内部容纳空间的主体和用于安装液体的结构的结构 分配器到饮用容器上，使得液体分配器不阻碍从饮用容器的边缘饮用; （b）将液体从液体分配器分配到饮用容器中; 和（c）通过液体分配器的结构将液体分配器安装到饮用容器上。

公开(公告)号：US20080099352A1

公开(公告)日：2008-05-01

申请号：US11752274

申请日：2007-05-22

申请人： Paul Jamison ,  Daniel Lee Bizzell

发明人： Paul Jamison ,  Daniel Lee Bizzell

IPC分类号： B65D25/08

CPC分类号： B65D23/003 ,  B65D1/04 ,  B65D1/095 ,  B65D25/22

摘要： A combination of a drinking container and a liquid dispenser comprises a drinking container defining an interior containment space for a beverage for human consumption and a liquid dispenser, which comprises a body defining an interior containment space and a structure by which the body of the liquid dispenser is mounted onto the drinking container such that the liquid dispenser does not obstruct drinking from a rim of the drinking container.

摘要翻译： 饮用容器和液体分配器的组合包括限定饮食用于人类消费的内部容纳空间的饮用容器和液体分配器，其包括限定内部容纳空间的主体和液体分配器的主体的结构 被安装到饮用容器上，使得液体分配器不阻碍从饮用容器的边缘饮用。

公开(公告)号：US20080099351A1

公开(公告)日：2008-05-01

申请号：US11752270

申请日：2007-05-22

申请人： Paul Jamison ,  Daniel Lee Bizzell

发明人： Paul Jamison ,  Daniel Lee Bizzell

IPC分类号： B65D77/06

CPC分类号： B65D23/003 ,  B65D1/04 ,  B65D1/095 ,  B65D25/22

摘要： A liquid dispenser comprises a body defining an interior containment space for containing a liquid to be dispensed and a structure configured to mount the liquid dispenser onto a drinking container. The structure comprises an elongate opening formed in the body of the liquid dispenser that generally divides the liquid dispenser into two portions. Approximately half of the volume of the interior containment space is located in the first portion of the body of the liquid dispenser. Alternatively, substantially all of the volume of the interior containment space is located in the first portion.

摘要翻译： 液体分配器包括限定用于容纳要分配的液体的内部容纳空间的主体和构造成将液体分配器安装到饮用容器上的结构。 该结构包括形成在液体分配器主体中的细长开口，其通常将液体分配器分成两部分。 内部容纳空间的体积的大约一半位于液体分配器的主体的第一部分中。 或者，内部容纳空间的基本上所有体积位于第一部分中。

公开(公告)号：USD584963S1

公开(公告)日：2009-01-20

申请号：US29280270

申请日：2007-05-22

申请人： Paul Jamison ,  Daniel Lee Bizzell

设计人： Paul Jamison ,  Daniel Lee Bizzell

公开(公告)号：US20080099506A1

公开(公告)日：2008-05-01

申请号：US11752281

申请日：2007-05-22

申请人： Paul Jamison ,  Daniel Lee Bizzell ,  Todd Stancombe

发明人： Paul Jamison ,  Daniel Lee Bizzell ,  Todd Stancombe

IPC分类号： B67D5/06

CPC分类号： B65D23/003 ,  B65D1/04 ,  B65D1/095 ,  B65D25/22

摘要： A liquid dispenser includes a body defining an interior containment space having two separate, isolated chambers each for containing a human consumable liquid to be dispensed. The liquid dispenser may include a structure configured to mount the liquid dispenser onto a drinking container. The liquid dispenser further may include a first sealing element that precludes a liquid contained within a first one of the chambers from flowing through a dispensing opening; a first tear away member; a second sealing element that precludes a liquid contained within a second one of the chambers from flowing through a dispensing opening; and a second tear away member, wherein manipulation of a tear away member results in rupturing of a sealing element whereby liquid may be dispensed from a chamber. The liquid held in each chamber may be a beverage additive, a flavoring, a nutritional supplement, and/or alcohol.

摘要翻译： 液体分配器包括限定内部容纳空间的主体，所述内部容纳空间具有两个分离的隔离室，每个隔室用于容纳待分配的人体可消耗液体。 液体分配器可以包括构造成将液体分配器安装到饮用容器上的结构。 液体分配器还可以包括第一密封元件，其排除容纳在第一个室内的液体流过分配开口; 第一个撕裂的成员; 第二密封元件，其排除容纳在第二个室内的液体流过分配开口; 和第二撕开构件，其中撕开构件的操作导致密封元件的破裂，从而可以从腔室分配液体。 保持在每个室中的液体可以是饮料添加剂，调味剂，营养补充剂和/或酒精。

公开(公告)号：US20060102968A1

公开(公告)日：2006-05-18

申请号：US10988733

申请日：2004-11-15

申请人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Nestor Bojarczuk ,  Cyril Cabral ,  Eduard Cartier ,  Martin Frank ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Rajarao Jammy ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L29/94

CPC分类号： H01L29/513 ,  H01L21/28194 ,  H01L21/2822 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor structure is provided that includes a Vt stabilization layer between a gate dielectric and a gate electrode. The Vt stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the proviso that when the Vt stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.

摘要翻译： 提供了一种半导体结构，其包括在栅极电介质和栅电极之间的V 1稳定层。 VST稳定层能够将结构的阈值电压和平带电压稳定到目标值，并且包括氮化金属氧化物或无氮金属氧化物，条件是当V < 稳定层包括无氮金属氧化物，半导体衬底或栅极电介质中的至少一个包括氮。 本发明还提供一种制造这种结构的方法。

公开(公告)号：US20050156257A1

公开(公告)日：2005-07-21

申请号：US11066762

申请日：2005-02-28

申请人： Nestor Bojarczuk ,  Kevin Chan ,  Christopher D'Emic ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Lars-Ake Ragnarsson

发明人： Nestor Bojarczuk ,  Kevin Chan ,  Christopher D'Emic ,  Evgeni Gousev ,  Supratik Guha ,  Paul Jamison ,  Lars-Ake Ragnarsson

IPC分类号： H01L21/8238 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/513 ,  H01L21/28194

摘要： A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

公开(公告)号：US06974779B2

公开(公告)日：2005-12-13

申请号：US10662875

申请日：2003-09-16

申请人： David L O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

发明人： David L O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/02181 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31658 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

公开(公告)号：US20050250318A1

公开(公告)日：2005-11-10

申请号：US11180384

申请日：2005-07-13

申请人： Vijay Narayanan ,  Fenton McFeely ,  Keith Milkove ,  John Yurkas ,  Matthew Copel ,  Paul Jamison ,  Roy Carruthers ,  Cyril Cabral ,  Edmund Sikorskii ,  Elizabeth Duch ,  Alessandro Callegari ,  Sufi Zafar ,  Kazuhito Nakamura

发明人： Vijay Narayanan ,  Fenton McFeely ,  Keith Milkove ,  John Yurkas ,  Matthew Copel ,  Paul Jamison ,  Roy Carruthers ,  Cyril Cabral ,  Edmund Sikorskii ,  Elizabeth Duch ,  Alessandro Callegari ,  Sufi Zafar ,  Kazuhito Nakamura

IPC分类号： C23C16/34 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78 ,  H01L21/3205 ,  H01L21/31 ,  H01L21/44 ,  H01L21/469 ,  H01L21/4763

CPC分类号： C23C16/34 ,  H01L21/28088 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/78

摘要： Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.

摘要翻译： 公开了Ta和N的化合物，潜在地包括其它元素，并且电阻率低于约20mOmegacm，并且N与Ta的元素比大于约0.9，用作场效应器件中的栅极材料。 这种化合物的典型实施方案TaSiN在典型的CMOS处理温度下在含有介电层和高k电介质层的SiO 2 2上是稳定的，功函数接近n型Si的功函数。 金属Ta-N化合物通过化学气相沉积方法使用烷基亚氨基三（二烷基酰氨基）Ta种，例如叔戊酰亚胺基三（二甲基酰氨基）Ta（TAIMATA））作为Ta前体沉积。 沉积是共形的，允许将Ta-N金属化合物柔性引入CMOS加工流程。 用TaN或TaSiN处理的器件显示出接近理想的特性。