METHODS OF SEPARATING INTEGRATED CIRCUIT CHIPS FABRICATED ON A WAFER
    1.
    发明申请
    METHODS OF SEPARATING INTEGRATED CIRCUIT CHIPS FABRICATED ON A WAFER 审中-公开
    在波形上分离集成电路芯片的方法

    公开(公告)号:US20090311849A1

    公开(公告)日:2009-12-17

    申请号:US12140492

    申请日:2008-06-17

    IPC分类号: H01L21/00

    摘要: Improved methods of separating integrated circuit chips fabricated on a single wafer are provided. In an embodiment, a method of separating integrated circuit chips fabricated on a wafer comprises: attaching a support to a back surface of the wafer; dicing the wafer to form individual integrated circuit chips attached to the support; attaching a carrier comprising a releasable adhesive material to a front surface of the wafer opposite from the back surface; separating the support from the back surface of the wafer; subjecting the carrier to an effective amount of heat, radiation, or both to reduce the adhesiveness of the adhesive material to allow for removal of at least one of the integrated circuit chips from the carrier; and picking up and moving at least one of the integrated circuit chips using a tool configured to handle the integrated circuit chips.

    摘要翻译: 提供了分离在单个晶片上制造的集成电路芯片的改进的方法。 在一个实施例中,分离在晶片上制造的集成电路芯片的方法包括:将支撑件附接到晶片的背面; 切割晶片以形成附接到支撑件的单个集成电路芯片; 将包含可释放粘合剂材料的载体附接到所述晶片的与所述后表面相对的前表面; 将支撑体从晶片的背面分离; 使载体经受有效量的热量,辐射或两者以降低粘合剂材料的粘附性,以允许将集成电路芯片中的至少一个从载体上移除; 以及使用构造成处理集成电路芯片的工具来拾取和移动至少一个集成电路芯片。

    INTERPOSER STRUCTURES AND METHODS OF MANUFACTURING THE SAME
    4.
    发明申请
    INTERPOSER STRUCTURES AND METHODS OF MANUFACTURING THE SAME 有权
    中间件结构及其制造方法

    公开(公告)号:US20100038126A1

    公开(公告)日:2010-02-18

    申请号:US12542935

    申请日:2009-08-18

    IPC分类号: H05K1/11

    摘要: Flexible and rigid interposers for use in the semiconductor industry and methods for manufacturing the same are described. Auto-catalytic processes are used to minimize the costs associated with the production of flexible interposers, while increasing the yield and lifetime. Electrical contact regions are easily isolated and the risk of corrosion is reduced because all portions of the interposer are plated at once. Leads projecting from the flexible portion of the interposers accommodate a greater variety of components to be tested. Rigid interposers include a pin projecting from a probe pad affixed to a substrate. The rigidity of the pin penetrates oxides on a contact pad to be tested. Readily available semiconductor materials and processes are used to manufacture the flexible and rigid interposers according to the invention. The flexible and rigid interposers can accommodate pitches down to 25 μm.

    摘要翻译: 描述了用于半导体工业的柔性和刚性插入件及其制造方法。 自动催化过程用于最小化与柔性插入物的生产相关的成本,同时提高产量和寿命。 电接触区域容易隔离,并且由于插入器的所有部分一次镀覆,因此腐蚀的风险降低。 从插入件的柔性部分突出的引线可容纳更多种待测试的部件。 刚性插入件包括从固定到基板的探针垫突出的销。 针的刚度穿过待测接触垫上的氧化物。 易于使用的半导体材料和工艺用于制造根据本发明的柔性和刚性插入件。 柔性和刚性插入件可以容纳低至25μm的间距。

    MICROWAVE READOUT FOR FLUX-BIASED QUBITS
    9.
    发明申请
    MICROWAVE READOUT FOR FLUX-BIASED QUBITS 有权
    微处理器为微处理器提供微波读取

    公开(公告)号:US20110175062A1

    公开(公告)日:2011-07-21

    申请号:US13026339

    申请日:2011-02-14

    IPC分类号: H01L39/22

    CPC分类号: G06N99/002 B82Y10/00

    摘要: A method for determining whether a quantum system comprising a superconducting qubit is occupying a first basis state or a second basis state once a measurement is performed is provided. The method, comprising: applying a signal having a frequency through a transmission line coupled to the superconducting qubit characterized by two distinct, separate, and stable states of differing resonance frequencies each corresponding to the occupation of the first or second basis state prior to measurement; and measuring at least one of an output power or phase at an output port of the transmission line, wherein the measured output power or phase is indicative of whether the superconducting qubit is occupying the first basis state or the second basis state.

    摘要翻译: 提供了一旦确定包括超导量子位的量子系统是否在执行测量时占据第一基础状态或第二基础状态的方法。 该方法包括:通过耦合到超导量子位的传输线施加具有频率的信号,其特征在于两个不同的,独立的和稳定的不同共振频率的状态,每个共振频率对应于在测量之前占用第一或第二基准状态; 并且测量所述传输线的输出端口处的输出功率或相位中的至少一个,其中所述测量的输出功率或相位指示所述超导量子位是否占据所述第一基准状态或所述第二基准状态。

    Interposer structures and methods of manufacturing the same
    10.
    发明授权
    Interposer structures and methods of manufacturing the same 失效
    插件结构及其制造方法

    公开(公告)号:US07688095B2

    公开(公告)日:2010-03-30

    申请号:US11741345

    申请日:2007-04-27

    IPC分类号: G01R31/02

    摘要: Flexible and rigid interposers for use in the semiconductor industry and methods for manufacturing the same are described. Auto-catalytic processes are used to minimize the costs associated with the production of flexible interposers, while increasing the yield and lifetime. Electrical contact regions are easily isolated and the risk of corrosion is reduced because all portions of the interposer are plated at once. Leads projecting from the flexible portion of the interposers accommodate a greater variety of components to be tested. Rigid interposers include a pin projecting from a probe pad affixed to a substrate. The rigidity of the pin penetrates oxides on a contact pad to be tested. Readily available semiconductor materials and processes are used to manufacture the flexible and rigid interposers according to the invention. The flexible and rigid interposers can accommodate pitches down to 25 μm.

    摘要翻译: 描述了用于半导体工业的柔性和刚性插入件及其制造方法。 自动催化过程用于最小化与柔性插入物的生产相关的成本,同时提高产量和寿命。 电接触区域容易隔离,并且由于插入器的所有部分一次镀覆,因此腐蚀的风险降低。 从插入件的柔性部分突出的引线可容纳更多种待测试的部件。 刚性插入件包括从固定到基板的探针垫突出的销。 针的刚度穿过待测接触垫上的氧化物。 易于使用的半导体材料和工艺用于制造根据本发明的柔性和刚性插入件。 柔性和刚性插入件可以容纳低至25μm的间距。