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公开(公告)号：US20050121803A1
公开(公告)日：2005-06-09
申请号：US11030496
申请日：2005-01-06
申请人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel McKnight , Hiromitsu Miyai , Kevin Petrarca , Wolfgang Sauter , Richard Volant , Caitlin Weinstein
发明人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel McKnight , Hiromitsu Miyai , Kevin Petrarca , Wolfgang Sauter , Richard Volant , Caitlin Weinstein
IPC分类号： H01L23/485 , H01L21/44 , H01L23/48 , H01L29/76 , H01L31/062
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05073 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/04941 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
摘要翻译： 公开了一种具有非平面电介质结构和在非平面电介质结构上共形形成的金属接合层的增强接合焊盘结构。 非平面电介质结构基本上在金属接合层中再现，从而形成非平面金属结构。 围绕非平面金属结构的每一个是介电材料环，其在接合焊盘探测期间提供硬停止，以限制在探测期间可以去除的接合焊盘的量。
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公开(公告)号：US07273804B2
公开(公告)日：2007-09-25
申请号：US11030496
申请日：2005-01-06
申请人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
发明人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
IPC分类号： H01L21/44 , H01L21/4763 , H01L31/00 , H01L23/48
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05073 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/04941 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
摘要翻译： 公开了一种具有非平面电介质结构和在非平面电介质结构上共形形成的金属接合层的增强接合焊盘结构。 非平面电介质结构基本上在金属接合层中再现，从而形成非平面金属结构。 围绕非平面金属结构的每一个是介电材料环，其在接合焊盘探测期间提供硬停止，以限制在探测期间可以去除的接合焊盘的量。
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公开(公告)号：US06864578B2
公开(公告)日：2005-03-08
申请号：US10249381
申请日：2003-04-03
申请人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
发明人： David Angell , Frederic Beaulieu , Takashi Hisada , Adreanne Kelly , Samuel Roy McKnight , Hiromitsu Miyai , Kevin Shawn Petrarca , Wolfgang Sauter , Richard Paul Volant , Caitlin W. Weinstein
IPC分类号： H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/05073 , H01L2224/05181 , H01L2224/05184 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/45144 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/3025 , H01L2924/04941 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
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公开(公告)号：US08524596B2
公开(公告)日：2013-09-03
申请号：US13550105
申请日：2012-07-16
申请人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
发明人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
IPC分类号： H01L21/44
CPC分类号： H01L21/76886 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/035 , H01L2224/0362 , H01L2224/03848 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1433 , H01L2924/00014
摘要： Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.
摘要翻译： 提供了焊盘制造技术。 一方面，形成接合焊盘的方法包括以下步骤。 至少一种合金元素被选择性地引入到焊盘的至少一个表面的至少一部分上。 所述至少一个合金元素通过一个或多个热循环扩散到所述接合焊盘的至少一部分中。 可以通过将包含至少一种合金元素的合金元素层沉积到接合焊盘上并且对该层的至少一部分进行图案化和蚀刻来将至少一种合金元素选择性地引入到焊盘。
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公开(公告)号：US20120279767A1
公开(公告)日：2012-11-08
申请号：US13550105
申请日：2012-07-16
申请人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
发明人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
CPC分类号： H01L21/76886 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/035 , H01L2224/0362 , H01L2224/03848 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1433 , H01L2924/00014
摘要： Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.
摘要翻译： 提供了焊盘制造技术。 一方面，形成接合焊盘的方法包括以下步骤。 至少一种合金元素被选择性地引入到焊盘的至少一个表面的至少一部分上。 所述至少一个合金元素通过一个或多个热循环扩散到所述接合焊盘的至少一部分中。 可以通过将包含至少一种合金元素的合金元素层沉积到接合焊盘上并且对该层的至少一部分进行图案化和蚀刻来将至少一种合金元素选择性地引入到焊盘。
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公开(公告)号：US20060244138A1
公开(公告)日：2006-11-02
申请号：US11115936
申请日：2005-04-27
申请人： Frederic Beaulieu , Gobinda Das , Steven Duda , Matthew Farinelli , Adreanne Kelly , Samuel McKnight , William Murphy
发明人： Frederic Beaulieu , Gobinda Das , Steven Duda , Matthew Farinelli , Adreanne Kelly , Samuel McKnight , William Murphy
IPC分类号： H01L23/495
CPC分类号： H01L21/76886 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/035 , H01L2224/0362 , H01L2224/03848 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1433 , H01L2924/00014
摘要： Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.
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公开(公告)号：US20050067708A1
公开(公告)日：2005-03-31
申请号：US10605369
申请日：2003-09-25
申请人： Lloyd Burrell , Kwong Wong , Adreanne Kelly , Samuel McKnight
发明人： Lloyd Burrell , Kwong Wong , Adreanne Kelly , Samuel McKnight
IPC分类号： H01L23/485 , H01L23/532 , H01L23/48
CPC分类号： H01L24/05 , H01L23/53223 , H01L24/45 , H01L2224/04042 , H01L2224/05073 , H01L2224/05083 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2924/00011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01327 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.
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