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17 条记录 (耗时 0.035 秒)

    System for laser removal of excess material from a semiconductor wafer
    6.
    发明授权
    System for laser removal of excess material from a semiconductor wafer 失效
    用于从半导体晶片激光去除多余材料的系统

    公开(公告)号：US4752668A

    公开(公告)日：1988-06-21

    申请号：US856303

    申请日：1986-04-28

    申请人： Michael G. Rosenfield ,  David E. Seeger

    发明人： Michael G. Rosenfield ,  David E. Seeger

    IPC分类号： H01L21/027 ,  B23K26/14 ,  G03F1/72 ,  G03F7/42 ,  H01L21/30 ,  B23K26/16

    CPC分类号： G03F7/42 ,  B23K26/1462 ,  G03F1/72

    摘要： A system for removing excess material from a semiconductor wafer employs an excimer laser for ablative photocomposition. A wafer is positioned on an X-Y stage that is computer controlled to position the wafer at points where the laser may be focused to remove excess material whether over alignment marks or identified contamination. The laser passes through a vacuum chamber which by generating an inward laminar flow constrains any particulate contamination resulting from the ablative photodecomposition from spreading. This material is removed by the vacuum system.

    摘要翻译： 用于从半导体晶片去除多余材料的系统采用准分子激光器进行烧蚀光电组合。 晶片定位在计算机控制的X-Y平台上，以将晶片定位在可以聚焦激光器的点处，以去除多余的材料，无论是对准标记还是识别出的污染物。 激光穿过真空室，其通过产生向内的层流限制由烧蚀光分解产生的任何颗粒污染物的扩散。 该材料被真空系统除去。

    Resist development endpoint detection for X-ray lithography
    8.
    发明授权
    Resist development endpoint detection for X-ray lithography 失效
    抵抗X射线光刻的发展端点检测

    公开(公告)号：US5264328A

    公开(公告)日：1993-11-23

    申请号：US874286

    申请日：1992-04-24

    申请人： Ronald A. DellaGuardia ,  John L. Mauer, IV ,  David E. Seeger

    发明人： Ronald A. DellaGuardia ,  John L. Mauer, IV ,  David E. Seeger

    IPC分类号： G03F7/26 ,  G03F7/30 ,  H01L21/027 ,  H01L21/30 ,  H01L21/66 ,  G03C5/02

    CPC分类号： G03F7/30 ,  Y10S430/168

    摘要： The present invention provides a method for determining the development endpoint in a X-ray lithographic process. Endpoint is determined by visually observing resist test field patterns through a microscope during the developing step. During the developing, changing test field patterns are formed because test field locations each had been exposed simultaneously to different radiation doses. These different doses are produced when radiation passes through a mask containing a plurality of different size radiation attenuators. When the changing test field pattern matches a known pattern, which is correlated to the desired development endpoint, the workpiece is removed from the developing step.

    摘要翻译： 本发明提供了一种用于确定X射线光刻工艺中的显影终点的方法。 通过在显影步骤期间通过显微镜在视觉上观察抗蚀剂测试场图案来确定端点。 在开发期间，形成变化的测试场模式，因为测试场位置各自同时暴露于不同的辐射剂量。 当辐射通过包含多个不同尺寸的辐射衰减器的掩模时，产生这些不同的剂量。 当改变的测试场模式匹配与期望的开发端点相关联的已知模式时，工件从显影步骤中移除。

    Radiation sensitive silicon-containing resists
    9.
    发明授权
    Radiation sensitive silicon-containing resists 失效
    辐射敏感含硅抗蚀剂

    公开(公告)号：US06344305B1

    公开(公告)日：2002-02-05

    申请号：US09654350

    申请日：2000-09-01

    申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0757

    摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

    摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。

    Radiation sensitive silicon-containing resists
    10.
    发明授权
    Radiation sensitive silicon-containing resists 失效
    辐射敏感含硅抗蚀剂

    公开(公告)号：US06187505B1

    公开(公告)日：2001-02-13

    申请号：US09241441

    申请日：1999-02-02

    申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0757

    摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

    摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。