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    Transistor structure having silicide source/drain extensions
    1.
    发明授权
    Transistor structure having silicide source/drain extensions 有权
    具有硅化物源极/漏极延伸部的晶体管结构

    公开(公告)号：US06737710B2

    公开(公告)日：2004-05-18

    申请号：US09343293

    申请日：1999-06-30

    Applicant: Peng Cheng ,  Brian Doyle ,  Gang Bai

    Inventor： Peng Cheng ,  Brian Doyle ,  Gang Bai

    IPC: H01L2976

    CPC classification number: H01L29/66507 ,  H01L29/41775

    Abstract: A MOSFET includes a double silicided source/drain structure wherein the source/drain terminals include a silicided source/drain extension, a deep silicided source/drain region, and a doped semiconductor portion that surrounds a portion of the source/drain structure such that the suicides are isolated from the MOSFET body node. In a further aspect of the present invention, a barrier layer is formed around a gate electrode to prevent electrical shorts between a silicided source/drain extension and the gate electrode. A deep source/drain is then formed, self-aligned to sidewall spacers that are formed subsequent to the silicidation of the source/drain extension.

    Abstract translation: MOSFET包括双硅化物源极/漏极结构，其中源极/漏极端子包括硅化源极/漏极延伸部分，深硅化物源极/漏极区域以及围绕源极/漏极结构的一部分的掺杂半导体部分，使得 自杀从MOSFET体节点隔离。 在本发明的另一方面，在栅极周围形成阻挡层，以防止硅化物源极/漏极延伸部和栅电极之间的电短路。 然后形成深源/漏极，自对准到在源极/漏极延伸层的硅化之后形成的侧壁间隔物。

    High dielectric constant metal oxide gate dielectrics
    2.
    发明申请
    High dielectric constant metal oxide gate dielectrics 失效
    高介电常数金属氧化物栅极电介质

    公开(公告)号：US20050087820A1

    公开(公告)日：2005-04-28

    申请号：US10646034

    申请日：2003-08-22

    Applicant: Gang Bai ,  David Fraser ,  Brian Doyle ,  Peng Cheng ,  Chunlin Liang

    Inventor： Gang Bai ,  David Fraser ,  Brian Doyle ,  Peng Cheng ,  Chunlin Liang

    IPC: H01L21/28 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/76

    CPC classification number: H01L29/513 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28229 ,  H01L29/517

    Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.

    Abstract translation: 形成适合用作金属氧化物半导体场效应晶体管（MOSFET）的栅极电介质层的电介质层的方法包括氧化硅衬底的表面，在氧化表面上形成金属层，并使金属 与氧化表面形成超过衬底的基本上本征的硅层，其中硅层的至少一部分可以是外延硅层，以及位于硅层之上的金属氧化物层。 在本发明的另一方面，集成电路包括多个MOSFET，其中多个晶体管中的各个晶体管具有金属氧化物栅极电介质层和位于金属氧化物电介质层之下的基本上本征的硅层。

    Method of making asymmetrical transistor structures
    3.
    发明授权
    Method of making asymmetrical transistor structures 有权
    制造不对称晶体管结构的方法

    公开(公告)号：US6121093A

    公开(公告)日：2000-09-19

    申请号：US164446

    申请日：1998-09-30

    Applicant: Peng Cheng ,  Brian Doyle

    Inventor： Peng Cheng ,  Brian Doyle

    IPC: H01L21/28 ,  H01L21/336

    CPC classification number: H01L29/6659 ,  H01L21/28132 ,  H01L29/66651 ,  H01L29/66659 ,  Y10S438/945

    Abstract: A method of forming an asymmetric transistor and an asymmetric transistor. The method includes patterning a first spacer material and a second spacer material over a gate electrode material on a substrate with one side of the second spacer material adjacent to a first spacer material. The gate electrode material is patterned according to the first spacer material and the second material. Junction regions are formed in the substrate adjacent to the gate electrode material. One of the first spacer material and the second spacer material is then removed and the gate electrode material is patterned into a gate electrode according to the other of the first spacer and the second spacer material. Finally, second junction regions are formed in the substrate adjacent to gate electrode.

    Abstract translation: 一种形成不对称晶体管和不对称晶体管的方法。 该方法包括在衬底上的栅极电极材料上形成第一间隔物材料和第二间隔物材料，其中第二间隔物材料的一侧与第一间隔物材料相邻。 根据第一间隔物材料和第二材料对栅电极材料进行图案化。 在与栅电极材料相邻的衬底中形成结区。 然后去除第一间隔物材料和第二间隔物材料中的一个，并且根据第一间隔物和第二间隔物材料中的另一个将栅电极材料图案化成栅电极。 最后，在与栅电极相邻的衬底中形成第二结区。

    BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE
    5.
    发明申请
    BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE 审中-公开
    具有降低的基极集电极结电容的双极晶体管

    公开(公告)号：US20130277804A1

    公开(公告)日：2013-10-24

    申请号：US13452335

    申请日：2012-04-20

    Applicant: Peng Cheng ,  David L. Harame ,  Robert K. Leidy ,  Qizhi Liu

    Inventor： Peng Cheng ,  David L. Harame ,  Robert K. Leidy ,  Qizhi Liu

    IPC: H01L29/732 ,  G06F17/50 ,  H01L21/331

    CPC classification number: H01L29/66287 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/7325

    Abstract: Methods for fabricating a device structure such as a bipolar junction transistor, device structures for a bipolar junction transistor, and design structures for a bipolar junction transistor. The device structure includes a collector region formed in a substrate, an intrinsic base coextensive with the collector region, an emitter coupled with the intrinsic base, a first isolation region surrounding the collector region, and a second isolation region formed at least partially within the collector region. The first isolation region has a first sidewall and the second isolation region having a second sidewall peripherally inside the first sidewall. A portion of the collector region is disposed between the first sidewall of the first isolation region and the second sidewall of the second isolation region.

    Abstract translation: 用于制造诸如双极结型晶体管的器件结构的方法，用于双极结型晶体管的器件结构以及用于双极结型晶体管的设计结构。 器件结构包括形成在衬底中的集电极区域，与集电极区域共同延伸的本征基极，与本征基极耦合的发射极，围绕集电极区域的第一隔离区域和至少部分地形成在集电极区域内的第二隔离区域 地区。 第一隔离区域具有第一侧壁，第二隔离区域在第一侧壁周围具有第二侧壁。 集电极区域的一部分设置在第一隔离区域的第一侧壁和第二隔离区域的第二侧壁之间。

    METHOD AND APPARATUS FOR PROVIDING A MULTI-DIMENSIONAL DATA INTERFACE
    6.
    发明申请
    METHOD AND APPARATUS FOR PROVIDING A MULTI-DIMENSIONAL DATA INTERFACE 审中-公开
    用于提供多维数据接口的方法和装置

    公开(公告)号：US20120271545A1

    公开(公告)日：2012-10-25

    申请号：US13089870

    申请日：2011-04-19

    Applicant: Peng Cheng

    Inventor： Peng Cheng

    IPC: G01C21/36

    CPC classification number: G06F1/169 ,  G06F1/1692 ,  G06F3/04815 ,  G06F3/0483 ,  G06F3/0488 ,  G06F2203/0339

    Abstract: Various methods for providing a multi-dimensional data interface are provided. One example method may include receiving first data navigation instructions for navigating data in a first dimension or a second dimension via a first user interface device, causing a presentation of the data to be modified within the first dimension or the second dimension in response to at least receiving the first data navigation instructions, receiving second data navigation instructions for navigating the data in a third dimension via a second user interface device, and causing the presentation of the data to be modified within a third dimension in response to at least receiving the second data navigation instructions. Similar and related example methods, example apparatuses, and example computer program products are also provided.

    Abstract translation: 提供了用于提供多维数据接口的各种方法。 一个示例性方法可以包括接收用于经由第一用户界面设备导航第一维度或第二维度中的数据的第一数据导航指令，以响应于至少在第一维度或第二维度中对数据进行修改 接收第一数据导航指令，接收用于经由第二用户界面设备导航第三维度中的数据的第二数据导航指令，并且响应于至少接收第二数据使得在第三维度内修改数据的呈现 导航说明。 还提供了类似的和相关的示例性方法，示例性装置和示例性计算机程序产品。

    Thermally Driven Heat Pump for Heating and Cooling
    7.
    发明申请
    Thermally Driven Heat Pump for Heating and Cooling 审中-公开
    用于加热和冷却的热驱动热泵

    公开(公告)号：US20110259039A1

    公开(公告)日：2011-10-27

    申请号：US12745168

    申请日：2008-11-26

    Applicant: Hongbin Ma ,  Joseph A. Boswell ,  Peng Cheng

    Inventor： Hongbin Ma ,  Joseph A. Boswell ,  Peng Cheng

    IPC: F25B17/00 ,  F25B41/00

    CPC classification number: F25B1/08 ,  F25B15/02 ,  F25B2341/0011 ,  F25B2341/0015 ,  Y02A30/277 ,  Y02B30/62

    Abstract: A thermally driven heat pump includes a low temperature evaporator for evaporating cooling fluid to remove heat A first heat exchanger located at an outlet of a converging/diverging chamber of a first ejector receives a flow of primary fluid vapor and cooling fluid vapor ejected from the first ejector for condensing a portion of the cooling fluid vapor An absorber located in the first heat exchanger absorbs cooling fluid vapor into an absorbing fluid to reduce the pressure in the first heat exchanger A second heat exchanger located at an outlet of a converging/diverging chamber of a second ejector receives primary fluid vapor and cooling fluid vapor ejected from the second ejector for condensing the cooling fluid vapor and the primary fluid vapor A separator in communication with the second ejector, the low temperature evaporator and the primary fluid evaporator separates the primary fluid from the cooling fluid.

    Abstract translation: 热驱动热泵包括用于蒸发冷却流体以去除热量的低温蒸发器。位于第一喷射器的会聚/发散室的出口处的第一热交换器接收从第一喷射器喷射的主流体蒸气和冷却流体蒸汽的流动 用于冷凝冷却流体蒸气的一部分的喷射器位于第一热交换器中的吸收器将冷却流体蒸气吸收到吸收流体中以降低第一热交换器中的压力位于位于会聚/发散室的出口处的第二热交换器 第二喷射器接收从第二喷射器喷射的主要流体蒸汽和冷却流体蒸气，用于冷凝冷却流体蒸气和与第二喷射器连通的主流体蒸汽A分离器，低温蒸发器和主流体蒸发器将主流体从 冷却液。

    Process for the stereoselective preparation of (−)-halofenate and derivatives thereof
    8.
    发明授权
    Process for the stereoselective preparation of (−)-halofenate and derivatives thereof 失效
    （ - ） - 卤代苯甲酸酯及其衍生物的立体选择性制备方法

    公开(公告)号：US07714131B2

    公开(公告)日：2010-05-11

    申请号：US11525200

    申请日：2006-09-20

    Applicant: Yan Zhu ,  Peng Cheng ,  Xin Chen ,  Jingyuan Ma ,  Zuchun Zhao

    Inventor： Yan Zhu ,  Peng Cheng ,  Xin Chen ,  Jingyuan Ma ,  Zuchun Zhao

    IPC: C07D295/16 ,  C07D207/06

    CPC classification number: C07D295/185

    Abstract: The present invention provides a compounds the formula (IV): and methods for producing an α-(phenoxy)phenylacetic acid compound of the formula: wherein R1 is a member selected from the group consisting of: each R2 is a member independently selected from the group consisting of (C1-C4)alkyl, halo, (C1-C4)haloalkyl, amino, (C1-C4)aminoalkyl, amido, (C1-C4)amidoalkyl, (C1-C4)sulfonylalkyl, (C1-C4)sulfamylalkyl, (C1-C4)alkoxy, (C1-C4)heteroalkyl, carboxy and nitro; the subscript n is 1 when R1 has the formula (a) or (b) and 2 when R1 has the formula (c) or (d); the subscript m is an integer of from 0 to 3; * indicates a carbon which is enriched in one stereoisomeric configuration; and the wavy line indicates the point of attachment of R1; and compounds.

    Abstract translation: 本发明提供式（Ⅳ）化合物及其制备下式所示的α-（苯氧基）苯乙酸化合物的方法：其中R 1为选自以下的成员：每个R 2为独立地选自 由（C 1 -C 4）烷基，卤素，（C 1 -C 4）卤代烷基，氨基，（C 1 -C 4）氨基烷基，酰胺基，（C 1 -C 4）酰氨基烷基，（C 1 -C 4）磺酰基烷基，（C 1 -C 4） ，（C 1 -C 4）烷氧基，（C 1 -C 4）杂烷基，羧基和硝基; 当R1具有式（a）或（b）时，下标n为1，当R1具有式（c）或（d））时，下标n为1; 下标m为0〜3的整数; *表示富含一种立体异构构型的碳; 波浪线表示R1的连接点; 和化合物。

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