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1.发明授权Method for manufacturing integrated structures including removing a sacrificial region 有权包括去除牺牲区域的集成结构的制造方法公开(公告)号：US06395618B2
公开(公告)日：2002-05-28
申请号：US09745071
申请日：2000-12-19
申请人： Paolo Vergani , Ilaria Gelmi , Pietro Montanini , Marco Ferrera , Laura Castoldi
发明人： Paolo Vergani , Ilaria Gelmi , Pietro Montanini , Marco Ferrera , Laura Castoldi
IPC分类号： H01L2176
CPC分类号： H01L21/764
摘要： The method is based on the use of an etching mask comprising silicon carbide or titanium nitride for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a masking layer comprising silicon carbide or titanium nitride; defining photolithographically the masking layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.
摘要翻译： 该方法基于使用包含碳化硅或氮化钛的蚀刻掩模来去除牺牲区域。 在制造集成半导体材料结构的情况下，执行以下步骤：在半导体材料的衬底上形成氧化硅牺牲区; 生长伪外延层; 形成电子电路部件; 沉积包含碳化硅或氮化钛的掩模层; 光刻地限定掩模层，以形成包含要形成的微结构的形貌的蚀刻掩模; 利用蚀刻掩模，在伪外延层中形成直到牺牲区域的沟槽，以横向限定微结构; 并通过沟槽去除牺牲区域。
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2.发明授权Method for manufacturing integrated structures including removing a sacrificial region 失效包括去除牺牲区域的集成结构的制造方法公开(公告)号：US06197655B1
公开(公告)日：2001-03-06
申请号：US09113466
申请日：1998-07-10
申请人： Pietro Montanini , Marco Ferrera , Laura Castoldi , Ilaria Gelmi
发明人： Pietro Montanini , Marco Ferrera , Laura Castoldi , Ilaria Gelmi
IPC分类号： H01L2176
CPC分类号： B81C1/00476 , B81B2203/033 , B81C1/00801 , B81C2201/0177 , B81C2201/053 , G01C19/56 , G01P15/0802 , G01P15/097 , G01P15/125 , H01L21/76202 , H01L21/764
摘要： The method is based on the use of a silicon carbide mask for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a silicon carbide layer; defining photolithographically the silicon carbon layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.
摘要翻译： 该方法基于使用碳化硅掩模去除牺牲区域。 在制造集成半导体材料结构的情况下，执行以下步骤：在半导体材料的衬底上形成氧化硅牺牲区; 生长伪外延层; 形成电子电路部件; 沉积碳化硅层; 光刻地定义硅碳层，以形成含有要形成的微结构的形貌的蚀刻掩模; 利用蚀刻掩模，在伪外延层中形成直到牺牲区域的沟槽，以横向限定微结构; 并通过沟槽去除牺牲区域。
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3.发明授权Method for manufacturing integrated devices including electromechanical microstructures, without residual stress 有权包括机电微结构的集成器件的制造方法，没有残余应力公开(公告)号：US06331444B1
公开(公告)日：2001-12-18
申请号：US09499919
申请日：2000-02-08
IPC分类号： H01L2100
CPC分类号： B81B3/0072 , B81B2203/033 , B81C1/00666 , B81C2201/017 , G01P15/0802 , G01P2015/0828
摘要： On a substrate of semiconductor material, a sacrificial region is formed and an epitaxial layer is grown; a stress release trench is formed, surrounding an area of the epitaxial layer, where an integrated electromechanical microstructure is to be formed; the wafer is then heat treated, to release residual stress. Subsequently, the stress release trench is filled with a sealing region of dielectric material, and integrated components are formed. Finally, inside the area surrounded by the sealing region, a microstructure definition trench is formed, and the sacrificial region is removed, thus obtaining an integrated microstructure with zero residual stress.
摘要翻译： 在半导体材料的衬底上，形成牺牲区，生长外延层; 形成应力释放沟槽，围绕将要形成集成的机电微结构的外延层的区域; 然后对晶片进行热处理，以释放残余应力。 随后，应力释放槽填充有电介质材料的密封区域，形成集成的部件。 最后，在由密封区域包围的区域内，形成微结构定义沟槽，去除牺牲区域，从而获得零残余应力的集成微结构。
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公开(公告)号：US08486741B2
公开(公告)日：2013-07-16
申请号：US13481680
申请日：2012-05-25
IPC分类号： H01L21/00 , H01L21/311 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0334 , H01L21/31116
摘要： The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.
摘要翻译： 所描述的工艺允许在包括形成在衬底上的支撑衬底和多层的结构中蚀刻沟槽，用于定义集成光学器件的波导，并且包括通过掩蔽结构在多层中的选择性等离子体侵蚀 对应于要蚀刻的沟槽的多层的未覆盖区域。 这样的掩模结构是通过在多层上形成金属材料掩模而获得的，该多层不会覆盖与待蚀刻的沟槽相对应的区域，并且形成非金属材料（例如光致抗蚀剂）的掩模，其上留下未覆盖的区域， 至少部分区域和金属材料掩模的边缘部分。
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公开(公告)号：US20060068554A1
公开(公告)日：2006-03-30
申请号：US11230292
申请日：2005-09-19
IPC分类号： H01L21/336
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0334 , H01L21/31116
摘要： The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.
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公开(公告)号：US06387725B1
公开(公告)日：2002-05-14
申请号：US09791965
申请日：2001-02-22
IPC分类号： H01L2100
CPC分类号： G01C19/574 , G01C19/5769 , G01P15/0802 , H01L21/76202 , H01L21/764
摘要： An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.
摘要翻译： 角速度传感器包括一对移动质量块，其形成在外延层中并且通过锚定元件锚固到装置的其余部分。 移动质量彼此对称，并且具有插入有第一固定激励电极的第一移动激励电极和插入第二固定检测电极的第二移动检测电极。 第一移动和固定激励电极沿第一方向延伸，并且第二移动和固定检测电极在垂直于第一方向的第二方向上延伸并且设置在平行于装置表面的单个平面上。
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7.发明授权Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced 失效用于制造高灵敏度加速度和陀螺仪集成传感器的过程以及由此产生的传感器
公开(公告)号：US6109106A
公开(公告)日：2000-08-29
申请号：US126625
申请日：1998-07-30
IPC分类号： G01P9/04 , B81B3/00 , G01C19/56 , G01P15/08 , G01P15/125 , H01L21/762 , H01L21/764 , H01L41/08
CPC分类号： H01L21/764 , B81C1/00246 , G01P15/0802 , G01P15/125 , H01L21/76202 , B81B2201/0235 , B81B2201/0242 , B81C2201/0109 , B81C2201/0177 , B81C2203/0735 , B81C2203/0778 , G01P2015/0814
摘要： A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
摘要翻译： 从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。 为了制造质量，在衬底中形成掩埋的导电区域。 然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。 然后使用核区域生长外延层。 沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。 最后，去除牺牲区域，形成气隙。
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8.再颁专利Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced 有权用于制造高灵敏度加速度和陀螺仪集成传感器的过程以及由此产生的传感器公开(公告)号：USRE41889E1
公开(公告)日：2010-10-26
申请号：US10360367
申请日：2003-02-05
IPC分类号： H01L21/00
CPC分类号： H01L21/764 , B81B2201/0235 , B81B2201/0242 , B81C1/00246 , B81C2201/0109 , B81C2201/0177 , B81C2203/0735 , B81C2203/0778 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/76202
摘要： A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
摘要翻译： 从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。 为了制造质量，在衬底中形成掩埋的导电区域。 然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。 然后使用核区域生长外延层。 沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。 最后，去除牺牲区域，形成气隙。
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公开(公告)号：US06527961B1
公开(公告)日：2003-03-04
申请号：US09033467
申请日：1998-03-02
IPC分类号： C23F100
CPC分类号： G01L9/0054 , G01L9/0055
摘要： A method for the formation of a region of silicon dioxide on a substrate of monocrystalline silicon. The epitaxial growth of a silicon layer, the opening of holes in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes until a silicon diaphragm, attached to the substrate along the edges and separated therefrom by a space, is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes to have diameters smaller than the thickness of the diaphragm and to be closed by the formation of a silicon dioxide layer by vapor-phase deposition at atmospheric pressure.
摘要翻译： 一种在单晶硅衬底上形成二氧化硅区域的方法。 硅层的外延生长，在二氧化硅区域上方的硅层中的孔的开放，以及通过孔的化学侵蚀去除构成该区域的二氧化硅，直到连接到衬底的硅隔膜 沿着边缘并与之隔开一个空间。 为了形成绝对压力微传感器，必须密封空间。 为此，该方法提供的孔具有小于隔膜厚度的直径，并且通过在大气压下气相沉积形成二氧化硅层来封闭孔。
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10.发明授权Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom 失效用于制造高灵敏度电容和谐振集成传感器，特别是加速度计和陀螺仪以及由其制造的传感器的方法
公开(公告)号：US6090638A
公开(公告)日：2000-07-18
申请号：US113979
申请日：1998-07-10
IPC分类号： B81B3/00 , G01C19/56 , G01P15/00 , G01P15/08 , G01P15/125 , H01L21/762 , H01L21/764 , H01L29/84 , H02L23/48
CPC分类号： H01L21/764 , B81C1/00246 , G01C19/56 , G01P15/0802 , G01P15/125 , H01L21/76202 , B81B2201/0235 , B81B2201/0242 , B81B2203/0136 , B81B2203/0307 , B81C2201/0109 , B81C2201/014 , B81C2203/0735 , G01P2015/0814
摘要： A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.
摘要翻译： 使用具有高密度钨芯的悬置结构形成具有高灵敏度的传感器。 为了制造它，将氧化硅牺牲层，多晶硅层，钨层和碳化硅层相继沉积在单晶硅体上。 通过选择性地去除碳化硅，钨和多晶硅层来限定悬浮结构。 然后形成覆盖钨层的未覆盖端的碳化硅间隔物，然后除去牺牲层。
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