Plasma processing with metal mask integration
    2.
    发明授权
    Plasma processing with metal mask integration 失效
    等离子处理与金属掩模集成

    公开(公告)号:US5213917A

    公开(公告)日:1993-05-25

    申请号:US648890

    申请日:1991-01-31

    IPC分类号: G03F7/26 G03F7/40 H05K3/18

    CPC分类号: G03F7/265 G03F7/40 H05K3/185

    摘要: This invention describes methods for altering a substrate in a fine line image pattern using a microlithographic process including formation of a metal mask over a photoresist coating to protect the photoresist coating during dry development of the same. The invention also describes a method for formation of the metal mask. Briefly stated, the process of the invention comprises the steps of coating a substrate with a photoresist coating, exposing the photoresist coating so formed to a desired pattern of actinic radiation, catalyzing the entire surface of the photoresist coating with an electroless plating catalyst, developing the photoresist layer to a depth at least sufficient to remove the undesired catalyst layer in an image pattern, forming a metal pattern on the desired (remaining) catalyst layer and dry developing the remaining photoresist coating unprotected by the metal mask.

    摘要翻译: 本发明描述了使用包括在光致抗蚀剂涂层上形成金属掩模的微光刻工艺来改变细线图像图案中的衬底的方法,以在其干燥显影期间保护光致抗蚀剂涂层。 本发明还描述了形成金属掩模的方法。 简要说明,本发明的方法包括以下步骤:用光致抗蚀剂涂层涂覆基材,将所形成的光致抗蚀剂涂层暴露于期望的光化辐射图形,用化学镀催化剂催化光刻胶涂层的整个表面, 光致抗蚀剂层至少足以去除图案图案中的不需要的催化剂层的深度,在期望的(剩余的)催化剂层上形成金属图案,并干燥显影未被金属掩模保护的剩余的光致抗蚀剂涂层。

    Plasma processing with metal mask integration
    3.
    发明授权
    Plasma processing with metal mask integration 失效
    具有金属掩模积分的等离子体处理

    公开(公告)号:US5053318A

    公开(公告)日:1991-10-01

    申请号:US353770

    申请日:1989-05-18

    CPC分类号: H05K3/185 G03F7/265 G03F7/40

    摘要: This invention describes methods for altering a substrate in a fine line image pattern using a microlithographic process including formation of a metal mask over a photoresist coating to protect the photoresist coating during dry development of the same. The invention also describes a method for formation of the metal mask. Briefly stated, the process of the invention comprises the steps of coating a substrate with a photoresist coating, exposing the photoresist coating so formed to a desired pattern of actinic radiation, catalyzing the entire surface of the photoresist coating with an electroless plating catalyst, developing the photoresist layer to a depth at least sufficient to remove the undesired catalyst layer in an image pattern, forming a metal pattern on the desired (remaining) catalyst layer and dry developing the remaining photoresist coating unprotected by the metal mask.