Barrier film for electronic devices and substrates

    公开(公告)号:US10862073B2

    公开(公告)日:2020-12-08

    申请号:US14018449

    申请日:2013-09-05

    IPC分类号: H01L51/56 H01L51/52 H01L51/00

    摘要: Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle θ relative to the substrate, wherein θ is greater than about 0° and less than about 85°. Additionally, a method of depositing a barrier film over a substrate includes directing a plurality of N sources of barrier film material toward a substrate, each source being directed at an angle θN relative to the substrate, wherein for each θN, θ is greater than about 0° and less than about 180°. For at least a first of the θN, θN is greater than about 0° and less than about 85°, and for at least a second of the θN, θN is greater than about 95° and less than about 180°.

    BARRIER FILM FOR ELECTRONIC DEVICES AND SUBSTRATES
    5.
    发明申请
    BARRIER FILM FOR ELECTRONIC DEVICES AND SUBSTRATES 审中-公开
    用于电子设备和基板的遮蔽膜

    公开(公告)号:US20140087497A1

    公开(公告)日:2014-03-27

    申请号:US14018449

    申请日:2013-09-05

    IPC分类号: H01L51/56

    摘要: Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle θ relative to the substrate, wherein θ is greater than about 0° and less than about 85°. Additionally, a method of depositing a barrier film over a substrate includes directing a plurality of N sources of barrier film material toward a substrate, each source being directed at an angle θN relative to the substrate, wherein for each θN, θ is greater than about 0° and less than about 180°. For at least a first of the θN, θN is greater than about 0° and less than about 85°, and for at least a second of the θN, θN is greater than about 95° and less than about 180°.

    摘要翻译: 公开了在表面上形成涂层的方法。 一种方法包括以第一方向以角度将第一阻挡膜材料源朝向衬底引导; 相对于基底,其中& 大于约0°且小于约85°。 另外,在衬底上沉积阻挡膜的方法包括将多个N源的阻挡膜材料引导向衬底,每个源相对于衬底以一定角度N指向;其中对于每个衬底,N, ; 大于约0°且小于约180°。 对于至少第一个“N”和“N”,N大于约0°且小于约85°,并且对于至少一秒的“N”和“N”,N大于约95°或更小 比约180°。

    BARRIER FILM FOR ELECTRONIC DEVICES AND SUBSTRATES

    公开(公告)号:US20210066675A1

    公开(公告)日:2021-03-04

    申请号:US17090930

    申请日:2020-11-06

    IPC分类号: H01L51/56 H01L51/52

    摘要: Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle θ relative to the substrate, wherein θ is greater than about 0° and less than about 85°. Additionally, a method of depositing a barrier film over a substrate includes directing a plurality of N sources of barrier film material toward a substrate, each source being directed at an angle θN relative to the substrate, wherein for each θN, θ is greater than about 0° and less than about 180°. For at least a first of the θN, θN is greater than about 0° and less than about 85°, and for at least a second of the θN, θN is greater than about 95° and less than about 180°.