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    Semiconductor nanocrystals and compositions and devices including same
    1.
    发明授权
    Semiconductor nanocrystals and compositions and devices including same 有权

    公开(公告)号：US09444008B2

    公开(公告)日：2016-09-13

    申请号：US14246275

    申请日：2014-04-07

    Applicant: QD VISION, INC.

    Inventor： Dorai Ramprasad ,  Craig Breen ,  Jonathan S. Steckel

    IPC: C09K11/08 ,  H01L33/28 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L29/225 ,  H01L33/06

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/225 ,  H01L33/0029 ,  H01L33/28 ,  Y10S977/774 ,  Y10S977/95 ,  Y10T428/2991 ,  Y10T428/2993

    Abstract: A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

    SEMICONDUCTOR NANOCRYSTALS AND METHODS
    3.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND METHODS 有权
    半导体纳米晶体和方法

    公开(公告)号：US20140227862A1

    公开(公告)日：2014-08-14

    申请号：US14182076

    申请日：2014-02-17

    Applicant: QD VISION, INC.

    Inventor： Inja Song ,  Craig Breen

    IPC: H01L21/02

    CPC classification number: H01L21/02601 ,  B01J13/22 ,  B82Y30/00 ,  H01L21/02518 ,  H01L21/02628

    Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.

    Abstract translation: 在一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和芳族溶剂的第一混合物，引入一种或多种阳离子前体和一种或多种阴离子前体 进入第一混合物以形成用于形成半导体材料的反应混合物，使反应混合物中的前体在不加入酸化合物的条件下，在足以在至少一部分外部生长包含半导体材料的涂层的条件下反应 半导体纳米晶体的至少一部分的表面，并且其中在分离涂覆的半导体纳米晶体之前在反应混合物中原位形成酰胺化合物。 在另一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和溶剂的第一混合物，引入酰胺化合物，一种或多种阳离子前体和一种或多种 阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物，并且在酰胺化合物存在下使反应混合物中的前体在足以在至少一部分 半导体纳米晶体的至少一部分的外表面。 还公开了包括根据上述方法生长的涂层的半导体纳米晶体。

    Semiconductor nanocrystals and compositions and devices including same
    5.
    发明授权
    Semiconductor nanocrystals and compositions and devices including same 有权
    半导体纳米晶体及其组成和装置，包括它们

    公开(公告)号：US08691114B2

    公开(公告)日：2014-04-08

    申请号：US13768714

    申请日：2013-02-15

    Applicant: QD Vision, Inc.

    Inventor： Dorai Ramprasad ,  Craig Breen ,  Jonathan S. Steckel

    IPC: C09K11/08

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/225 ,  H01L33/0029 ,  H01L33/28 ,  Y10S977/774 ,  Y10S977/95 ,  Y10T428/2991 ,  Y10T428/2993

    Abstract: A composition comprising a semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. Also disclosed is a composition comprising a semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

    Abstract translation: 一种组合物，其包含半导体纳米晶体，所述半导体纳米晶体包括芯，所述芯包括包含至少三个化学元素的第一半导体材料和设置在所述芯的至少一部分上的壳，所述壳包含第二半导体材料，其中所述半导体纳米晶体能够发光 激发后的光致发光量子效率大于约65％。 还公开了包含半导体纳米晶体的组合物，其包括芯，其包含包含至少三个化学元素的第一半导体材料和设置在芯的至少一部分上的壳，壳包含包含至少三个化学元素的第二半导体材料， 其中所述半导体纳米晶体在激发时能够发射具有大于约60％的光致发光量子效率的光。

    QUANTUM DOTS, METHOD, AND DEVICES
    6.
    发明申请
    QUANTUM DOTS, METHOD, AND DEVICES 有权
    量子点，方法和设备

    公开(公告)号：US20140027711A1

    公开(公告)日：2014-01-30

    申请号：US14041618

    申请日：2013-09-30

    Applicant: QD Vision, Inc.

    Inventor： Craig Breen ,  Jonathan S. Steckel

    IPC: H01L33/04

    CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/06 ,  C09K11/08 ,  C09K2211/14 ,  Y10T428/2998

    Abstract: A quantum dot including a fluorine-containing ligand attached to a surface thereof and having a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot. A method for preparing a quantum dot with a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot is also disclosed. The method comprises contacting a quantum dot having a fluorine-containing ligand attached to a surface thereof with a fluoropolymer to coat the fluoropolymer over at least a portion of the outer surface of the quantum dot. A device including the quantum dot taught herein is further disclosed. An emissive material including the quantum dot taught herein is further disclosed.

    Abstract translation: 一种量子点，其包括附着在其表面上的含氟配体，并且在该量子点的外表面的至少一部分上具有包含含氟聚合物的涂层。 还公开了在量子点的外表面的至少一部分上制备包含含氟聚合物的涂层的量子点的方法。 该方法包括使具有附着在其表面上的含氟配体的量子点与含氟聚合物接触，以在该量子点的外表面的至少一部分上涂覆含氟聚合物。 进一步公开了包括本文教导的量子点的装置。 进一步公开了包括本文教导的量子点的发射材料。

    DEVICE INCLUDING QUANTUM DOTS
    9.
    发明申请
    DEVICE INCLUDING QUANTUM DOTS 审中-公开
    包括量子的设备

    公开(公告)号：US20140027713A1

    公开(公告)日：2014-01-30

    申请号：US14042074

    申请日：2013-09-30

    Applicant: QD Vision, Inc.

    Inventor： Marshall Cox ,  Craig Breen ,  Zhaoqun Zhou ,  Jonathan S. Steckel

    IPC: H01L33/04 ,  H01L33/00

    CPC classification number: H01L33/04 ,  H01L21/02439 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02601 ,  H01L33/005 ,  H01L33/0087 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L51/502

    Abstract: A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot).

    Abstract translation: 一种制造器件的方法，所述方法包括：在第一电极上沉积包含量子点的层，所述量子点包括附着于其外表面的配体; 处理包含量子点的沉积层的表面以除去暴露的配体; 并在其上形成器件层。 还公开了根据所公开的方法制造的装置。 本发明的另一方面涉及一种包括第一电极和第二电极的装置，以及在两个电极之间包含量子点的层，该层包括从分散体沉积的量子点，所述分散体在形成之后已被处理以除去暴露的配体 设备中的层。 本发明的另一方面涉及一种包括第一电极和第二电极的装置，包括设置在第一和第二电极之间的第一无机半导体材料的层和设置在第一和第二电极之间的多个量子点，外部 包括第二无机半导体材料的量子点的表面，其中第一无机半导体材料和第二无机半导体材料的组成相同（不考虑量子点的外表面上的任何配体）。

    DEVICES INCLUDING QUANTUM DOTS AND METHOD
    10.
    发明申请
    DEVICES INCLUDING QUANTUM DOTS AND METHOD 审中-公开
    包括量子和方法的设备

    公开(公告)号：US20140027712A1

    公开(公告)日：2014-01-30

    申请号：US14041881

    申请日：2013-09-30

    Applicant: QD Vision, Inc.

    Inventor： Craig Breen

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  H01L51/502 ,  H01L51/5056 ,  H01L51/5072

    Abstract: A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed.

    Abstract translation: 一种制备器件的方法，所述方法包括：在第一电极上形成第一器件层，所述第一器件层包含由不产生酸性副产物的溶胶 - 凝胶组合物形成的金属氧化物，以及在第 第一器件层，其中所述方法还包括在形成所述第一器件层之前或之后，在所述第一电极上形成包含量子点的层。 还公开了一种包括形成在第一电极上的第一器件层的器件，所述第一器件层包括由不包含酸性副产物的溶胶 - 凝胶加工形成的金属氧化物，第一器件层上的第二电极和 层包括设置在第一器件层和两个电极中的一个之间的量子点。 还公开了通过该方法制备的器件。

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